钼粉表面超声波化学镀铜

利用超声波对钼粉末进行化学镀铜,并探讨了镀液组成及工艺条件对钼粉末化学镀铜的影响.利用X射线衍射判断相组成,用扫描电镜观察镀覆结果.结果表明:引入超声波并调整镀液组成和工艺条件可以实现钼粉表面化学镀铜,施镀过程中保持了镀液的稳定性,同时对复合粉末进行了有效的分散;以EDTA和酒石酸钾钠为络合剂,并加入聚乙二醇和2,2'-联吡啶作为稳定剂,可以有效地消除复合粉末中的Cuz O.通过严格控制pH值、温度和甲醛浓度可以获得质量好的铜镀层.     

非金属化学镀铜新工艺

在新设计的非金属化学镀铜溶液中,通过考察各个因素对沉积速度和镀液稳定性的影响,确定了新的镀铜工艺。新工艺以次亚磷酸钠代替甲醛作还原剂,以复配的具有催化活性作用的Cu~(2 )和Ni~(2 )作催化剂,镀速快、无毒、铜膜层致密光亮、镀液更稳定,完全优于以甲醛为还原剂的化学镀铜技术。     

SiC颗粒表面化学镀铜的研究

为了改善SiC/Al之间的润湿性,采用化学镀法时40μm的SiC颗粒进行了化学镀铜,并研究了影响化学镀铜镀速的因素.采用扫描电镜(SEM)观察镀覆层形貌,确定了镀覆效果最好时影响化学镀铜各因素的取值,分析了搅拌和EDTA溶解状况对镀覆效果的影响.结果表明:随着温度升高,装载量、甲醛和NaOH浓度增加时,镀速先升高后降低.当镀速最大时,镀覆效果也最好.随着硫酸铜含量的升高,镀速也不断提高,镀液中硫酸铜7g/L、EDTA 14g/L、稳定剂30mg/L时镀覆效果最好.搅拌能够提高镀速,得到好的镀覆效果;EDTA未完全溶解时会降低镀速,影响镀覆效果.     

以酒石酸钾钠为主络合剂的化学镀铜添加剂研究

研究了以酒石酸钾钠为主络合剂的化学镀铜添加剂,讨论了甲醇、亚铁氰化钾、2,2′-联吡啶三种添加剂对镀液稳定性、镀层质量、沉积速率的影响,通过正交试验确定了各添加剂的用量。实验结果表明:在酒石酸钾钠为主络合剂的化学镀铜液中添加14mL/L甲醇、30mg/L亚铁氰化钾和5mg/L 2,2′-联吡啶,化学铜沉积30min后,沉积速率可达到4.6μm/h。在此工艺条件下,镀层呈现带光泽的淡粉红色,镀液稳定性佳,镀层附着力好。     

石墨表面无敏化及活化的化学镀铜法

由于石墨表面具有特殊性,具备自动催化的功能,因此无需敏化、活化等工艺,可直接在石墨表面进行化学镀铜,获得的铜镀层光滑致密,镀液的稳定性好,同时对石墨表面化学镀铜的机理进行了探讨,分析了镀液能稳定进行镀覆反应的原因,并利用SEM对反应初期以及后期的复合粉末进行了观察,证明反应时石墨表面能直接生成大量均匀分布的铜微晶,生长至彼此侧面相连时就得到完整镀层,并且石墨颗粒越小,化学镀铜的活性越高,因而非常适合用于制备高性能的金属石墨复合材料.     

氧化铝陶瓷基板化学镀铜工艺优化

目的化学镀铜是氧化铝陶瓷基板金属化的一种重要手段,为了进一步优化氧化铝陶瓷基板化学镀铜工艺,研究了化学镀铜液配比(尤其是镀液中铜离子和甲醛含量)对氧化铝陶瓷覆铜板微结构和导电性的影响。方法在对氧化铝陶瓷基板经过前期处理后,采用化学镀铜法在基板上镀铜。采用X射线衍射仪、光学显微镜对氧化铝基板上的化学镀铜层物相和形貌进行观察。采用覆层测厚仪、四探针测试仪对化学铜镀层的膜厚和方阻进行测量。结果 XRD结果表明,不同配比镀液得到的化学镀铜层均具有较好的晶化程度,镀液中甲醛和铜含量较低的镀液可制备出晶粒更为细小的化学镀铜层。甲醛和铜离子含量均较高时,沉积速度过快,使镀铜层的均匀性和致密性不佳。但当甲醛含量较高、铜离子含量较低时,沉积速度适中,从而获得了均匀性和致密性较好的镀铜层,同时这种镀层具有良好的导电性。结论采用表面活性化学镀铜工艺,当镀液中甲醛浓度为0.25 mol/L和硫酸铜质量浓度为1.2 g/L时,无需高温热处理,即获得了均匀性和致密性俱佳的铜镀层,可满足覆铜板的使用要求。     

稳定剂对96Al2O3陶瓷表面化学镀铜的影响

为改善甲醛、酒石酸钾钠体系的镀液稳定性,实验研究了分别添加及同时添加甲醇、亚铁氰化钾两种稳定剂,对96Al2O3陶瓷基片化学镀铜的沉积速度、外观及镀液稳定性的影响.结果证明,单一加入甲醇能很好改善镀液稳定性,适量的甲醇还能提高沉积速度;单一加入亚铁氰化钾也能明显改善镀液稳定性,而且还能改善镀层外观质量,但沉积速度下降;同时添加两稳定剂,可在沉积速度不降低的前提下,明显改善了镀液稳定性和镀层外观质量.     

化学镀法制备铜包覆SiC颗粒的研究

采用化学镀法制备了镀铜SiC粉体,研究了预处理、镀液成分、pH值和装载量对SiC化学镀铜的影响,并比较了主盐含量和装载量对复合粉体中铜含量变化的影响。利用XRD,SEM和EDS对粉体的物相、形貌、成分进行了分析,得到了最佳施镀工艺。结果表明:用于预处理的活化敏化液要放置一段时间后使用,才能成功地实施化学镀铜;随着pH值和主盐含量的升高,镀速呈上升趋势,但粉体的包覆完整性和均一性下降;通过改变装载量来控制复合粉体中的铜含量可行。     

表面活性剂在陶瓷化学镀铜工艺中的作用

通过研究在镀液中添加十六烷基三甲基溴化铵(CTAB)、十二烷基硫酸钠(SDS)和吐温-80三种表面活性剂对化学镀铜沉积速率和镀液稳定性的影响,确定出三种添加剂的最优添加浓度。通过扫描电镜、能谱分析仪和X射线衍射仪,对镀层表面形貌、组成成分以及晶体结构分别进行研究。并通过线性伏安扫描法,研究了添加不同表面活性剂镀液的电化学行为。结果表明:表面活性剂可以提高化学镀铜的沉积速率和镀液稳定性。CTAB、SDS和吐温-80的最优添加浓度分别为1mg/L、20mg/L和5mg/L。加入SDS后,由于沉积速率过大,使得镀层颗粒变大。加入CTAB和吐温-80可以细化镀层的颗粒且更加致密。添加不同的表面活性剂后,镀层的晶粒尺寸没有太大改变,含铜量均为100%且镀层的晶粒呈现面心立方晶体结构。表面活性剂主要通过影响甲醛的氧化反应影响化学镀铜过程。     

钨粉表面化学镀铜研究

为了提高钨粉制品的性能,采用正交实验方法,利用SEM、XRD、EDS等分析手段,系统研究了化学镀铜主要工艺参数对钨粉表面化学镀铜的影响规律。结果表明:在温度固定条件下,各因素对镀液稳定性影响的显著性顺序是:硫代硫酸钠加入量>pH值>χ(Tar2-/Cu2 )>甲醛加入量,而对镀速影响的显著性顺序是:χ(Tar2-/Cu2 )>pH值>甲醛加入量>硫代硫酸钠加入量;较佳的钨粉表面化学镀铜工艺为:五水硫酸铜8g/L;酒石酸钾钠28g/L;EDTA0.75g/L;NaOH8.5g/L;硫代硫酸钠10mg/L;甲醛7.5ml/L;pH=12;温度40℃。采用所推荐的工艺,成功的在钨粉上获得了化学镀铜层。     

温度对金刚石粉体表面镀铜的影响

在金刚石粉体表面通过化学沉积得到铜金属镀层,通过X射线衍射(XRD)、扫描电镜(SEM)等测试手段研究了镀液温度对镀速、镀层组织及形貌的影响。结果表明:当镀液温度低于30℃时,镀速为零,反应不能发生;温度在30~45℃时,随着温度的升高,铜的衍射峰逐渐增强;45℃时,基体完全被覆盖,镀层致密均匀;温度在45~50℃时,衍射峰进一步增强,镀层晶粒明显变大,致密度降低,表层有脱落现象;随着温度进一步增大,铜的衍射峰强度开始降低,60℃时,镀层有明显的脱落,翻边起皮现象。     

Role of additives in electroless copper plating using hypophosphite as reducing agent

In electroless copper plating baths using hypophosphite as the reducing agent, nickel ions was used to catalyze hypophosphite oxidation. However, the color of the copper deposits was dark or brown and the electrical resistivity was much higher than that obtained from formaldehyde baths. Polyethylene glycol (PEG) and K₄Fe(CN)₆ were used to improve the microstructure and properties of copper deposits obtained from electroless copper plating bath using hypophosphite as the reducing agent. The effects of PEG concentration on the deposition rate, the microstructure, morphology and electrical resistivity of the copper deposits, and the electrochemical reactions of hypophosphite (oxidation) and cupric ion (reduction) were investigated. The traces of hydrogen escaping from the deposits surface disappeared and the color of the copper deposits changed from dark-brown to dark red when the PEG concentration was 1.67 × 10^− 5 M or more. The deposition rate increased and the electrical resistivity of the copper deposits decreased slightly with the addition of PEG to the plating solution. The electrical resistivity of copper deposits decreased to 2.85 μΩ cm with 1.67 × 10^− 5 M PEG and 4.70 × 10^− 6 M K₄Fe(CN)₆ in the bath. Larger grain size and higher (220) plane orientation were obtained with the increase of PEG concentration in the bath. The electrochemical current–voltage results showed that PEG accelerated the catalytic oxidation of hypophosphite at active nickel sites and had little effect on the reduction reaction of cupric ions on the deposit surface by adsorption on the electrode.     

Electroless deposition of copper from methane sulphonate complexed bath

Abstract

Electroless copper deposition is widely used for printed circuit applications. A new bath based on copper methane sulphonate replacing copper sulphate, EDTA and paraformaldehyde has been developed, which is very useful for plating on non-conductors and through hole plating in printed circuit manufacturing processes. The new bath has a higher rate of deposition of 3·3 μm h^?1 than the conventional sulphate bath (with a rate of 1·5 μm h^?1) and the bath stability and the quality of the deposits are very good. Scanning electron microscopy, X-ray diffraction and atomic force microscopy studies have been carried out and the crystallite size of the copper is measured to be 134 nm with a preferred orientation of 200 planes. The deposit obtained is pure copper and the surface roughness is of the order of 10 nm.     

Preparation of Fe–Zn alloy deposits by electroless plating

Abstract

Fe–Zn binary alloys have been deposited by electroless plating. The films were prepared on a copper substrate in contact with an aluminium strip. The effects of the concentration of ligand, reducing agent, pH value, temperature of plating bath and plating time on the deposition rate, and structure and morphology of the films have been studied. A practical electroless plating solution has been developed.     

金刚石表面化学镀铜工艺的优化(英文)

研究预镀1%铬金刚石颗粒表面化学镀铜的预处理工艺、镀液成分和工艺参数对表面形貌、沉积效率、镀层均匀性等的影响,优化出最佳工艺参数。结果表明,采用20%NaOH溶液处理30 min后,再在SnCl2溶液中进行5 min敏化和在PbCl2溶液中进行20 min活化,能提高预镀1%铬金刚石颗粒表面镀铜质量,并获得较高的铜沉积率。化学镀铜最佳工艺条件为:16 g/L CuSO4·5H2O,35 mL/L甲醛,23 g/L酒石酸钾钠,温度60°C,pH=13,辅助超声加(350±15)r/min的机械搅拌。采用此工艺在预镀1%铬金刚石颗粒表面获得了厚度均匀的纯铜层。     

Investigation of electroless copper plating on polyurethane foam,as an initial step of open cell foam production process

Abstract

Coating of polymeric foams is known as a method for production of metallic foams, which produces foams with high volume of porosity and controllable pore size. In this research, this method was employed to produce open cell copper foam by use of polyurethane foam with an average pore size of 0.4?mm as the substrate. Since polyurethane foam as a non-conductive material is not able to be coated directly by electrolytic deposition, the substrate was initially metallised by electroless copper plating. In the electroless plating process, the effects of the main parameters such as bath chemical composition, solution pH and temperature on deposition rate and thickness of the coatings obtained were investigated. The results showed that the optimum condition of the process is obtained when CuSO₄ concentration in the deposition bath is 12?g?L^??1, pH is 13 and plating temperature range is 55–60°C.     

银包铜粉的制备工艺及研究进展

介绍了银包铜粉的制备工艺及研究现状。银包铜粉的制备方法包括置换法、化学还原法、置换与化学沉积复合法及熔融雾化法。分析了常见的置换法和化学还原法制备银包铜粉时的镀液组成、沉积机制,给出了较为成熟的制备工艺。银包铜粉与贵金属粉相比有着极高的价格优势,在电子浆料中有着广阔的应用前景。     

离子注入陶瓷化学镀Cu工艺的优化

离子注入可作为前处理工艺辅助Al2O3陶瓷表面化学镀铜,优化了离子注入后以甲醛为还原剂、酒石酸钾钠为络合剂的碱性化学镀铜的基本配方.探讨了主盐浓度、甲醛、pH值、温度等对沉铜速度和镀层表面粗糙度的影响.研究了注入不同金属对沉铜速度的影响,结果表明注入铜比注入镍的化学镀铜速度快.