电化学法制备BaMoO_4和SrMoO_4薄膜的生长特性比较研究(II):个性研究

采用恒电流电化学技术直接在金属钼片上制备了具有白钨矿结构的钼酸盐(BaMoO4、SrMoO4)薄膜,对制备时间分别为10s直到50min的BaMoO4薄膜和制备时间分别为1min直到100min的SrMoO4薄膜的生长情况进行了SEM测试,并对相应结果进行了对比分析。研究表明:用电化学法制备BaMoO4和SrMoO4晶态薄膜,其生长特性既具有共性,也具有鲜明的个性。其共性特征已在另文中给出。其鲜明的个性特征是:1)BaMoO4和SrMoO4这两种薄膜在生长初期晶粒的成核速率不同;两种薄膜晶粒的生长速率不同;2)两种薄膜晶粒的形貌不同,晶粒的尺寸大小明显不同;3)两种薄膜晶粒的生长取向不同。该研究结果对功能薄膜的电化学制备和了解及预测白钨矿结构的晶态薄膜的生长习性,具有重要意义。     

不同衬底上纳米晶WO3薄膜的光致发光特性

以偏钨酸铵为钨源,聚乙二醇(PEG)为聚合物合成前驱体溶胶,分别在FTO导电玻璃、石英玻璃和石墨衬底制备WO3薄膜,利用X射线衍射(XRD)、拉曼光谱(LRS)和场发射扫描电镜(FESEM)等手段对薄膜进行结构表征,研究衬底和热处理温度对WO3薄膜光致发光性能的影响,并探讨二者对WO3薄膜光致发光性能的影响机制.结果表明:随着热处理温度的升高,WO3薄膜光致发光性能显著提高;在相同热处理温度下,石墨衬底WO3薄膜具有最强的光致发光性能.     

磁控共溅射SiC纳米颗粒／SiO2基质镶嵌结构薄膜材料的微结构和光致发光特性

采用二氧化硅／碳化硅复合靶，用射频磁控共溅射技术和后高温退火的方法在Si(111)衬底上制备了碳化硅纳米颗粒／二氧化硅基质(nc-SiC／SiO2)镶嵌结构薄膜材料，用X射线衍射(XRD)，傅里叶红外吸收(FTIR)，扫描电子显微镜(SEM)和光致发光(PL)实验分析了薄膜的微结构以及光致发光特性。结果表明：样品薄膜经高温退火后，部分无定形SiC发生晶化，形成β-SiC纳米颗粒而较均匀地镶嵌在SiO2基质中。以280nm波长光激发薄膜表面，有较强的365nm的紫外光发射以及458nm和490nm处的蓝光发射，其发光强度随退火温度的升高显著增强，发光归结为薄膜中与Si-O相关的缺陷形成的发光中心。     

化学溶液工艺制备多晶钼酸钙薄膜

利用化学溶液途径成功地制备出了符合化学计量比的钼酸钙多晶薄膜.通过旋涂技术将薄膜沉积在Si(100)或载玻片上,并利用SEM技术表征了薄膜的表面形貌,以及薄膜的表面随退火温度变化的特征.X射线衍射结果显示,在溶液中,钼酸钙化合物就已直接生成而不需经过任何中间过程.退火温度对钼酸钙薄膜微观结构的影响研究表明,当退火高于550℃时薄膜的生长具有择优取向特征.钼酸钙薄膜的拉曼光谱测试结果进一步表明了钼酸钙薄膜的四方相结构特征以及薄膜微观结构的均一性.此外,本文还报道了不同温度下测得的钼酸钙薄膜在紫外光激发下的光致发光性质,其研究结果表明,在276 nm的紫外光激发下,钼酸钙薄膜具有一个宽的(～200 nm)绿光发射带.     

氨化磁控溅射Ga2O3/BN薄膜制备GaN纳米棒

利用射频磁控溅射技术在Si(111)衬底上制备Ga2O3/BN薄膜,在氨气中退火合成了大量的一维GaN纳米棒.用X射线衍射(XRD)、选区电子衍射(SAED)、傅立叶红外透射谱(FTIR)、扫描电子显微镜(SEM)、透射电子显微镜(TEM)和光致发光谱(PL)对样品的晶体结构、元素成分、形貌特征和光学特性进行了分析.结果表明GaN纳米棒为六方纤锌矿结构的单晶相,其直径在150 nm～400 nm左右,长度可达几十微米.室温下光致发光谱的测试发现了较强的372nm处的强紫外发光峰和420nm处的蓝色发光峰.     

电化学法制备BaMoO_4和SrMoO_4薄膜的生长特性比较研究(I):共性分析

采用恒电流电化学技术直接在金属钼片上制备了具有白钨矿结构的钼酸盐(BaMoO4、SrMoO4)薄膜,对制备时间分别为10s直到50min的BaMoO4薄膜和制备时间分别为1min直到100min的SrMoO4薄膜的生长情况进行了SEM测试,并对相应结果进行了对比分析。研究表明:用电化学法制备BaMoO4和SrMoO4晶态薄膜,其生长特性既具有共性,也具有鲜明的个性。其共性特征是:1)成膜机制相同;2)薄膜生长初期就有比较完整的晶核生成;3)晶核和晶粒优先选择在金属基体缺陷(折叠、划痕、缺陷、凹凸不平等)处堆砌和生长;4)基体上晶粒的数量随着制备时间的增加而增加,晶粒的尺寸也随着时间的延长而长大,晶粒逐渐从稀疏分布到布满整个基体;5)在具有白钨矿结构的钼酸盐晶态薄膜的生长过程中,晶体的{111}面总是显露的。其鲜明的个性特征将在另文中讨论。该研究结果对功能晶态薄膜的生长(特别是利用电化学技术制备功能晶态薄膜的生长)和了解及预测白钨矿结构的晶态薄膜的生长习性,均具有重要意义。     

氨化磁控溅射Ga2O3/BN薄膜制备GaN纳米棒

利用射频磁控溅射技术在Si(111)衬底上制备Ga2O3/BN薄膜,在氨气中退火合成了大量的一维GaN纳米棒.用X射线衍射(XRD)、选区电子衍射(SAED)、傅立叶红外透射谱(FTIR)、扫描电子显微镜(SEM)、透射电子显微镜(TEM)和光致发光谱(PL)对样品的晶体结构、元素成分、形貌特征和光学特性进行了分析.结果表明:GaN纳米棒为六方纤锌矿结构的单晶相,其直径在150 nm～400 nm左右,长度可达几十微米.室温下光致发光谱的测试发现了较强的372nm处的强紫外发光峰和420nm处的蓝色发光峰.     

中频反应磁控溅射制备Al2O3:CeCl3薄膜及其光致发光特性

应用中频反应磁控溅射技术制备了Al2O3:CeCl3的非晶薄膜.Ce3+含量和薄膜的化学成分通过X射线散射能谱(EDS)测量.薄膜试样的晶体结构用x射线衍射分析.俄歇电子谱用于对薄膜材料的化学组分进行定性分析.薄膜的光致发光峰是在370 nm到405 nm范围内,它们来自于Ce3+离子的5d1激发态向基态4f1的两个劈裂能级的跃迁.发光强度强烈地依赖于薄膜中的掺杂浓度和沉积时的基片温度.薄膜发光来自于氯化铈分子中的发光中心,而不是其他的掺杂Ce3+离子.随铈含量增加,光致发光峰向低能方向移动,可能与薄膜中存在氯元素有关.     

电化学法制备BaMoO4和SrMoO4薄膜的生长特性比较研究(Ⅱ):个性研究

采用恒电流电化学技术直接在金属钼片上制备了具有白钨矿结构的钼酸盐（BaMoO4、SrMoO4）薄膜，对制备时间分别为10s直到50min的BaMoO4薄膜和制备时间分别为1min直到100min的SrMoO4薄膜的生长情况进行了SEM测试，并对相应结果进行了对比分析。研究表明：用电化学法制备BaMoO4和SrMoO4晶态薄膜，其生长特性既具有共性，也具有鲜明的个性。其共性特征已在另文中给出。其鲜明的个性特征是：1）BaMoO4和SrMoO4这两种薄膜在生长初期晶粒的成核速率不同；两种薄膜晶粒的生长速率不同；2）两种薄膜晶粒的形貌不同，晶粒的尺寸大小明显不同；3）两种薄膜晶粒的生长取向不同。该研究结果对功能薄膜的电化学制备和了解及预测白钨矿结构的晶态薄膜的生长习性，具有重要意义。     

层间插入CdS铌酸钾薄膜的制备及其光解水制氢

采用分析纯Nb2O5和K2CO3粉末为原料,通过高温固相反应合成具有层状结构的K4Nb6O17粉末,经湿磨和离心沉淀分离,用旋转涂敷法在石英玻璃基片上制备出K4Nb6O17薄膜,通过相应的层间离子交换、层间胺插入反应和硫化处理,制备了层间CdS插入的CdS/H4Nb6O17纳米复合薄膜.用XRD衍射分析证实了层间反应的发生,用紫外可见吸收光谱研究了材料的光吸收特性,用自制的光催化制氢装置在模拟太阳光的150 W氙灯下检测了材料的光解水制氢性能.结果表明,所制备的CdS/H4Nb6O17纳米复合薄膜具有良好的光谱利用率和光解水特性.)     

Surface morphology and photoluminescence properties of ZnO thin films obtained by PLD

ZnO thin films on Si(111) substrate were deposited by laser ablation of Zn target in oxygen reactive atmosphere, Nd-YAG laser with wavelength of 1 064 nm was used as laser source. XRD and FESEM microscopy were applied to characterize the structure and surface morphology of the deposited ZnO films. The optical properties of the ZnO thin films were characterized by photoluminescence. The UV and deep level (yellow-green) light were observed from the films. The UV light is the intrinsic property and deep level light is attributed to the existence of antisite defects (Ozn). The intensity of UV and deep level light depends strongly on the surface morphology and is explained by the surface roughness of ZnO film. A strongly UV emission can be obtained from ZnO film with surface roughness in nanometer range.     

Conversion of a green light emitting zinc-quinolate complex thin film to a stable and highly packed blue emitter film

Tris-(8-hydroxyquinoline) metal complex Znq₂, used as light-emitting layer in electroluminescent (EL) devices was synthesized and optical properties of as-deposited Znq₂ in thin films were studied. Interesting phenomenon was observed while studying the ageing and degradation behavior of Znq₂ films and consequently a stable form having strong blue photoluminescence (peak 465 nm) was discovered. This converted (from green to blue emitting) film has higher molecular packing density and comparable photoluminescence intensity with Znq₂ film. Here, we report on the production of this blue material under controlled conditions and its optical properties.The thin films have been deposited by thermal evaporation on quartz and silicon substrates. The optical constants (n and k) of green Znq₂ film and converted (to blue) thin films have been determined using spectroscopic ellipsometry. Environment induced effects on optical properties of films have been studied using ellipsometry, photoluminescence and UV–vis transmission measurements.     

Influence of preparation methods on photoluminescence properties of ZnO films on quartz glass

The influence of preparation methods on the photoluminescence properties of ZnO film was studied. Two methods were applied to fabricate ZnO films in a conventional pulsed laser deposition apparatus. One is high temperature （500-700℃） oxidation of the metallic zinc film that is obtained by pulsed laser deposition. The other is pulse laser ablation of Zn target in oxygen atmosphere at low temperature （100-250 ℃）. The photoluminescence property was detected by PL spectrum. The room temperature PL spectra of the ZnO films obtained by oxidation method show single violet luminescence emission centered at 424 nm （or 2.90 eV） without any accompanied deep-level emission and UV emission. The violet emission is attributed to interstitial zinc in the films. Nanostructure ZnO film with c-axis （002） orientation is obtained by pulsed laser deposition. The ZnO film deposited at 200 ℃ shows single strong ultraviolet emission. The excellent UV emission is attributed to the good crystalline quality of the film and low intrinsic defects at such low temperature.     

太阳能高反射薄膜制备技术对薄膜性能的影响

采用磁过滤阴极真空弧沉积(FCVAD)与磁控溅射(MS)两种技术在玻璃上制备厚度分别为75 nm和165 nm的Glass/Al高反射薄膜,利用Lambda 950分光光度计、扫描电子显微镜、原子力显微镜、附着力测试仪、摩擦试验机和加速老化试验箱分别表征薄膜的反射率、表面形貌、粗糙度、附着力、耐摩擦和耐老化性能,通过薄膜性能评估分析两种技术制备高反射膜性能的差异。结果表明:在双方优化工艺下,FCVAD制备的薄膜表面形貌和附着力优于MS薄膜;FCVAD制备的75 nm和165 nm薄膜反射率比同厚度MS薄膜高出3.3%~4.2%;75 nm厚的薄膜方均根粗糙度明显小于同厚度的MS薄膜;FCVAD制备的75 nm薄膜老化后反射率仅下降1.2%,而MS同厚度薄膜反射率下降了3.3%~4%。说明FCVAD在制备高反射膜方面比磁控溅射更有优势。     

钼酸铋薄膜的化学溶液制备技术及其性能表征

使用化学溶液制各技术在硅(100)衬底上制备出符合化学计量比的钼酸铋(α相)薄膜.采用X射线衍射(XRD)分析的研究结果表明,所制备的薄膜具有单一的单斜晶相结构利用原子力显微镜(AFM)对其表面形貌进行表征,验证了实验过程中溶剂的改变对薄膜结构和表面形貌产生的影响;使用荧光发射仪研究了薄膜在室温下的发光特性.结果表明,通过化学溶液制备技术可以制备出具有单一晶相的钼酸铋(α相)薄膜,该薄膜具有良好的光致发光特性.     

EFFECT OF PHOTOOXIDATION ON PHOTOLUMINESCENCE OF N, N‘-DIPHENYL-N, N‘-DI(M-TOLYL)-BENZIDINE AND RUBRENE CODOPED PMMA THIN FILMS

1. IntroductionSince the bright emission from a tris 8-hydroxyquinolinato aluminum(Al.3)/diaminebiIayer structure was firstly reportedIl], organic Iight--emitting diodes (OLEDs) have beenstudied extensively for its potential applications in flat-panel color display devices[2--6].Attributing to scientists' effOrt, great progresses have been made in the OLED. Manyresearch groups and companies exhibited their demos and products. Some optimistic peopleeven thought the products of full color …     

TiO2／PSS自组装薄膜的光催化性能

利用静电自组装工艺在石英衬底上制备了结构有序的TiO2／PSS纳米复合膜，并采用UV-Vis-NIR分光光度计、原子力显微镜(AFM)对复合膜的结构与光催化性能进行了深入的研究。结果表明：有序多孔TiO2颗粒膜具有良好的光催化性能，能够在短时间内降解掉复合膜中有机成分，烧结处理薄膜的光催化性能明显优于紫外照射处理的样品。     

气压对离子源增强磁控溅射制备氮化铝薄膜的影响

目的 制备性能优异的氮化铝薄膜.方法 采用射频感应耦合离子源辅助直流磁控溅射的方法 制备氮化铝薄膜,在不同的气压下,在Si(100)基片和普通玻璃上生长了不同晶面取向的氮化铝薄膜.使用X射线衍射仪(XRD)、场发射扫描电镜(FESEM)、原子力显微镜(AFM)分析氮化铝薄膜的结构、晶面取向、表面形貌及薄膜表面粗糙度,使用紫外可见分光光度计测定薄膜的透过率,并计算薄膜的禁带宽度.研究气压的大小对磁控溅射制备氮化铝薄膜微观结构的影响.结果 在各气压下,薄膜生长以(100)面取向为主.在0.7Pa前,(100)面的衍射峰强度逐渐增强,0.7 Pa之后减弱.(002)面衍射峰强度在0.6Pa之前较大,0.6Pa之后变小.各气压下薄膜表面均方根粗糙度均小于3nm,且随着气压的增大先增大后减小,0.7 Pa时最大达到2.678nm.各气压下所制备薄膜的透过率均大于60%,0.7Pa时薄膜的禁带宽度为5.4eV.结论 较高气压有利于(100)晶面的生长,较低气压有利于(002)晶面的生长;(100)面衍射峰强度在0.7 Pa时达到最大;随气压的增大,薄膜表面粗糙度先增大后减小;所制备的薄膜为直接带隙半导体薄膜.     

The evolution behavior of structures and photoluminescence of K-doped ZnO thin films under different annealing temperatures

In this work, 1 at.% K-doped ZnO thin films were prepared by sol-gel method on Si substrates. The evolution behavior of the structures and photoluminescence of these films under different annealing temperatures was deeply studied. The crystal structures and surface morphology of the samples were analyzed by an X-ray diffractometer and an atomic force microscope, respectively. The photoluminescence spectra were used to study the luminescent behavior of the samples. The results showed that the films had a hexagonal wurtzite structure and were preferentially oriented along the c-axis perpendicular to the substrate surface. All the samples showed a strong ultraviolet emission and a weak blue emission. With the increase of annealing temperature, the ZnO grains gradually grew up; at the same time, the blue emission gradually decreased. The sample annealed at 500 °C showed the best crystalline quality and strongest ultraviolet emission. The authors think that the blue emission in these samples is mainly connected with K interstitial defects. When the 1 at.% K-doped ZnO thin film is annealed at high temperatures (≥600 °C), most of K interstitials move into ZnO lattice sites replacing Zn. As a result, the blue emission resulting from K interstitial defects also decreased.