锂离子掺杂量对BLMNS陶瓷的介电性能的影响

采用传统固相法制备Bi2-xLix(Mg1/3Nb0.517Sn0.15)2O7(BLMNS)(x=0.025,0.05,0.075,0.1mol)陶瓷,利用X射线衍射、扫描电镜等测试分析方法系统研究锂离子掺杂对BLMNS陶瓷的介电性能和结构的影响。结果表明:在所掺杂锂离子的陶瓷中仍保持单一的单斜焦绿石相结构,无第二相出现。随着锂离子取代量的增加,陶瓷的晶粒尺寸变化不大,晶粒尺寸稍有增大,介电常数(εr)先减小后增大,介电损耗(tanδ)先减小后增大,陶瓷的密度一直减小。随着烧结温度增加,陶瓷的密度先增大后减小。烧结温度为980℃时,锂离子掺杂的BLMNS陶瓷的密度最大。在980℃烧结时锂离子取代量为0.05mol时BLMNS陶瓷的性能较好:εr=163(1MHz),tanδ=0.0001(1MHz),体积密度为7.55g/cm3。     

Sr掺杂对BaTiO3陶瓷结构与介电性能的影响

以BaCO3、SrCO3和TiO2为原料,通过固相烧结方法制备了Ba1-xSrxTiO3(0≤x≤1)。利用X射线衍射仪(XRD)、扫描电镜(SEM)、以及阻抗分析仪分别分析Ba1-xSrxTiO3相结构、显微组织和测量介温谱。结果表明,Sr的掺杂没有改变BaTiO3的晶体结构,Ba1-xSrxTiO3(0≤x≤1)固溶体为完全互溶固溶体,为单一的立方相,但随着锶含量的增加,居里点逐渐降低。     

添加KNN和BBS对BaTiO3陶瓷微结构和介电性能的影响

采用固相法制备添加K0.5Na0.5NbO3(KNN)和BBS玻璃(BBS)的BaTiO3电容器陶瓷。借助X射线衍射仪、扫描电镜和阻抗分析仪研究掺杂对晶体结构、微观组织及介电性能的影响。结果表明:单独添加KNN的样品呈单一的钙钛矿结构。随KNN的增加,陶瓷样品高温端的电容变化率减小。掺杂3%~5%KNN(摩尔分数)陶瓷满足X7R特性。掺杂1%BBS(质量分数)对含3%KNN(摩尔分数)陶瓷的晶体结构无影响。BBS超过3%(质量分数)时,有第二相Bi4B2O9和BaTi5O11生成。1 100℃烧结掺杂3%BBS(质量分数)和1%KNN(摩尔分数)的BaTiO3陶瓷具有中等介电常数(1 045),低的介电损耗(0.74%)和较高的体积电阻率(5.5×1011.cm),在55、125和150℃的电容变化率分别为6.6%、1.7%和13.2%,有望用于中温制备的X8R型多层陶瓷电容器。     

低温烧结ZnO-TiO2陶瓷的结构与微波介电性能

研究了CuO-V2O5-Bi2O3(CVB)低熔化合物对ZnO-TiO2二元体系相关系和介电性能的影响规律.发现少量CVB添加剂可有效降低ZnO-TiO2陶瓷的烧结温度;烧结温度对相稳定性和介电性能影响显著,当CVB的添加量为2%(质量分数)时,可使烧结温度降至850℃,并具有优异的微波介电性能,其ε=30.5,Q×f32 000GHz,τf=10×10-6/℃;增加CVB的加入量对介电常数影响不大,但使Q×f值显著降低,而进一步提高烧结温度则会使介电常数和谐振频率温度系数显著提高,而品质因数下降.     

Mo元素掺杂对氧化铝基陶瓷/金属复合材料微观形貌及介电性能的影响

采用粉末冶金法制备了Mo掺杂的Al_2O_3基陶瓷/金属复合材料(Al_2O_3/Mo),利用X射线衍射、扫描电镜等测试分析方法研究了Mo掺杂对复合材料微观形貌及介电性能的影响。结果表明:Al_2O_3/Mo复合材料主要由Al_2O_3相和Mo相组成,未出现新相。Mo主要分散在Al_2O_3晶界,并且随着Mo掺杂量的增加,Al_2O_3晶粒尺寸逐渐减小、材料气孔率逐渐增加。当Mo掺杂量小于20%(质量分数)时,复合材料电阻率(10~(12)?·cm)与相对介电常数(8~9)没有明显变化;而当Mo掺杂量大于20%,Mo由弥散相转变为连续相,复合材料的体电阻率急剧下降到10~(10)?·cm;当Mo掺杂量达到40%时,由于复合材料中Mo已经形成连续的贯穿网络,体电阻率下降趋势减缓,稳定在10?·cm左右。因此,通过调控Al_2O_3基体中的Mo掺杂量及相分布,可以制备出具有不同电阻率的陶瓷/金属复合材料。     

SiO2陶瓷复合材料高温介电性能研究

在室温至1000℃范围内,采用谐振腔法测试SiO2陶瓷复合材料介电性能随频率、温度的变化规律,根据电介质理论,并结合材料本身的成分及结构特征,讨论了SiO2陶瓷复合材料介电性能变化的物理本质.利用高温XRD分析了SiO2复合材料从室温至1500℃之间的相组成变化,推测出SiO2复合材料介电性能受相变影响的温度为1500℃.     

La2O3与Sb2O3掺杂钛酸锶钡陶瓷的介电性能及相变（英文）

采用固相法制备La2O3与Sb2O3掺杂的钛酸锶钡陶瓷,研究其介电性能及相变特性。通过X射线衍射法分析体系微观结构并利用扫描电镜观察其表面微观形貌。(La,Sb)共掺杂的钛酸锶钡陶瓷具有典型的钙钛矿结构,且随着Sb2O3掺杂量的增多其平均粒径显著减小。La3+离子以及Sb3+离子均占据钙钛矿晶格的A位。La2O3与Sb2O3添加量的改变显著影响钛酸锶钡基陶瓷的介电常数以及介电损耗。La2O3改性的钛酸锶钡陶瓷其四方?立方相变为二级相变,且居里温度随着La2O3掺杂量的增多向低温方向移动。(La,Sb)共掺杂的钛酸锶钡陶瓷则体现为弥散相变,随着Sb2O3含量的增大而偏离居里-外斯定律越显著。由于Sb3+离子对晶格原位离子的取代使得(La,Sb)共掺杂的钛酸锶钡陶瓷的介电常数最大值下的温度亦随着Sb2O3含量的增大而降低。     

Y掺杂BST薄膜介电性能研究

用改进溶胶-凝胶法在Pt/Ti/SiO_2/Si上制备了钇(Y)掺杂Ba_0.6Sr_0.4TiO_3 (BST)薄膜,研究了Y掺杂对BST薄膜表面结构和介电性能的影响.XPS结果表明,Y掺杂有利于薄膜钙钛矿结构的形成,但对氧空位没有明显的抑制作用.SEM和AFM结果表明,Y掺杂能缓解薄膜应力、减少薄膜裂纹、细化晶粒,进而改善薄膜的表面结构.在进行Y掺杂后,薄膜的介电性能得到明显提高,40 V外加电压下的介电调谐率大于40%及零偏压下介电损耗为0.0210,优化因子大于20.     

氮化硅多孔陶瓷的制备及微波介电性能研究

通过添加成孔剂,采用反应烧结工艺制备出具有不同气孔率的氮化硅多孔陶瓷.采用阿基米德法、三点弯曲法测试了材料的密度、气孔率及抗弯强度.用XRD及扫描电镜对相组成和显微结构进行了研究,用谐振腔法测试了该氮化硅陶瓷在9360 MHz频率的微波介电特性.结果表明,随着试样中气孔率的增加,试样的介电常数下降;在Si粉中添加α-Si3N4粉后,虽能提高氮化率,改善组织结构,但外加Si3N4和基体生产的Si3N4存在活性差异,两者结合不紧密,使强度降低;加入α-Si3N4粉使晶相组成中Si2ON2的含量降低,能够改善试样的介电性能.     

氮化硅多孔陶瓷的制备及微波介电性能研究

通过添加成孔剂,采用反应烧结工艺制备出具有不同气孔率的氮化硅多孔陶瓷.采用阿基米德法、三点弯曲法测试了材料的密度、气孔率及抗弯强度.用XRD及扫描电镜对相组成和显微结构进行了研究,用谐振腔法测试了该氮化硅陶瓷在9360 MHz频率的微波介电特性.结果表明,随着试样中气孔率的增加,试样的介电常数下降;在Si粉中添加α-Si3N4粉后,虽能提高氮化率,改善组织结构,但外加Si3N4和基体生产的Si3N4存在活性差异,两者结合不紧密,使强度降低;加入α-Si3N4粉使晶相组成中Si2ON2的含量降低,能够改善试样的介电性能.     

Magnetic properties and microstructures of SnO2 doped Mn-Zn ferrites

The effects of additive SnO2 (0.4wt.%), with and without SiO2 (0.02wt.%) and/or CaO(0.04wt.%), on the microstructure and magnetic properties of Mn-Zn ferrites were reported. The results reveal that SnO2 on its own increases the initial permeability ( μi) slightly, but SnO2 with SiO2 and/or CaO decreases the values of μi. However, ferrites with SnO2 additions have reduced power losses. The separate contributions of hysteresis loss and eddy current loss to the total power loss show that SnO2 (with or without SiO2 and/or CaO) doping increases the hysteresis loss slightly, but SnO2 doping alone reduces the eddy current loss significantly (～14%). The additions of SiO2 or CaO further decrease the eddy current loss, and by interaction of SnO2-CaO-SiO2, the eddy current loss is reduced by more thaN20%. These magnetic and microstructural effects were discussed in terms of the additive-impurity interaction, the existence of grain boundary phases, and the effective bulk and grain boundary resistivities of the ferrites.     

Structure, dielectric and electrical properties of cerium doped barium zirconium titanate ceramics

Rare-earth doped barium zirconium titanate (BZT) ceramics, Ba(Zr_0.25Ti_0.75)O₃ + xCeO₂, (x = 0-1.5 at%) were obtained by a solid state reaction route. Perovskite-like single-phase compounds were confirmed from X-ray diffraction data and the lattice parameters were refined by the Rietveld method. It is found that, integrating with the lattice parameters and the distortion of crystal lattice, there is an alternation of substitution preference of cerium ions for the host cations in perovskite lattice. Morphological analysis on sintered samples by scanning electron microscopy shows that the addition of rare-earth ions affects the growth of the grain and remarkably changes the grain morphology. The effect of rare-earth addition to BZT on dielectric and electrical properties is analyzed. High values of dielectric tunability are obtained for cerium doped BZT. Especially, the experimental results on the effect of the contents of rare-earth addition on the resistivity of BZT ceramics were investigated, demonstrating that the samples with x = 0.4 and x = 0.6 could be semiconducting in air atmosphere.     

MnO_2掺杂Ni-Zn铁氧体的微观结构及磁性能

为了改善Ni-Zn铁氧体材料的功率损耗特性,基于固相反应烧结法研究MnO2掺杂对Ni-Zn铁氧体综合性能的影响。研究发现,在0～2.0%（质量分数）掺杂范围内,MnO2不会影响铁氧体的单相结构。而Ni-Zn铁氧体的平均晶粒尺寸、烧结密度以及磁导率都随着MnO2掺杂量的增加而逐渐下降,同时,铁氧体的电阻率持续上升。饱和磁化强度（单位质量产生的磁矩）先随着0.4%MnO2的掺入略有上升,而后随着MnO2掺杂量的增加持续下降,这主要是受金属离子占位及超交换作用力变化的影响。当测试频率低于1MHz时,铁氧体的功耗（Pcv）随着MnO2掺杂量的增加持续上升,而当测试频率超过1MHz后,涡流损耗在总损耗中逐渐占主导地位,电阻率越高的样品越有利于获得低功耗,但这一规律对于2.0%MnO2掺杂的样品不适用。总体而言,当频率低于1MHz时,不掺杂MnO2的Ni-Zn铁氧样品能够获得更低的功耗;而当频率超过1MHz后,掺杂1.6%MnO2的Ni-Zn铁氧体能够获得最低的功耗。     

石墨烯/SnO2/Cu复合材料微观组织及性能研究

采用微波水热合成法对石墨烯进行表面改性,形成石墨烯/SnO2纳米复合物;将其用于粉末冶金法制备石墨烯/SnO2/Cu复合材料。采用多种分析测试手段对复合材料的微观组织及性能进行研究。结果表明,石墨烯表面吸附的SnO2纳米颗粒不会在复合材料制备过程中脱落,并可有效抑制石墨烯团聚,提高复合材料的致密度、硬度和热导率等性能。本文制备的石墨烯/SnO2/Cu复合材料致密度为91.0%,硬度为166HBW,热导率139W/(m℃),远高于Graphene/Cu复合材料。Graphene/SnO2/Cu复合材料中,界面结合良好,无开裂和界面反应;基体Cu中的刃型位错、形变孪晶以及石墨烯表面的SnO2纳米颗粒,是导致复合材料电导率下降的主要原因。     

Physical properties of ultrasonic sprayed nanosized indium doped SnO2 films

Here, we report on the preparation and characterization of nanosized indium doped tin oxide films (TO:In). The films are grown by ultrasonic spray pyrolysis deposition (USPD) onto glass. The structural, optical, electrical and morphological properties of SnO₂ (TO) films are investigated. The as-deposited films SnO₂ have preferred orientation along the (2 0 0) plane and are polycrystalline with a tetragonal crystal structure. Following this direction, the average grain size, obtained from XRD patterns, decreases with the rate doping. It ranges from 64 to 17 nm. In UV spectrum, the transmittance increases followed by a slight decay within visible range. Optical band gap, E_g, is about 4.1 eV. The samples reveal a high resistivity which varies in the range 10⁴–10⁷ Ω cm. Activation energies of shallow levels, as obtained from Arrhenius plots, vary from 85 meV to 165 meV. SEM and AFM analysis demonstrate nanostructure morphology.     

Electrical and magnetic properties of magnesium ferrite ceramics doped with Bi2O3

The effects of concentration of Bi₂O₃ and sintering temperature on DC resistivity, complex relative permittivity and permeability of MgFe_1.98O₄ ferrite ceramics were studied. The objective of the study was to develop magneto-dielectric materials, with almost equal values of permeability and permittivity, as well as low magnetic and dielectric loss tangent, for the design of antennas with reduced physical dimensions. It was found that the poor densification and slow grain growth rate of MgFe_1.98O₄ can be greatly improved by the addition of Bi₂O₃, because liquid phase sintering was facilitated by the formation of a liquid phase layer due to the low melting point of Bi₂O₃. It was found that 3% Bi₂O₃ can result in fully sintered MgFe_1.98O₄ ceramics. The DC resistivities of the MgFe_1.98O₄ ceramics were increased as a result of the addition of Bi₂O₃, except for 0.5%. The exceptionally low resistivities of the 0.5% samples were explained by a ‘cleaning’ effect of the small amount of liquid phase at the samples’ grain boundaries. The electrical and magnetic properties of the MgFe_1.98O₄ ceramics exhibited a strong dependence on the concentration of Bi₂O₃. The 0.5% samples were found to have the highest dielectric loss tangents, which can be understood similarly to the DC resistivity results. The 2–3% Bi₂O₃ is required to attain low dielectric loss MgFe_1.98O₄ ceramics for antenna application. Low concentration of Bi₂O₃ increased the static permeability of the MgFe_1.98O₄ ceramics owing to the improved densification and grain growth, while too high a concentration led to decreased permeability owing to the incorporation of the non-magnetic component (Bi₂O₃) and retarded grain growth. However, the addition of Bi₂O₃ alone is not able to produce magneto-dielectric materials based on MgFe_1.98O₄ ceramics, and further work is necessary to modify the permeability using cobalt (Co).     

Structural, dielectric and piezoelectric properties of aluminium doped PLZT ceramics prepared by sol–gel route

Nanosized piezoelectric ceramics for vibration sensor applications have been prepared by mixing the ferroelectric PLZT (8:60:40) with variable doping fractions of trivalent aluminium ion (Al³⁺). Samples have been prepared through a standard sol–gel route. X-ray diffraction and scanning electron microscopy (SEM) have been used to determine the phase and morphological modifications. Transmission electron microscopy (TEM) studies reveal the microstructure with nanosized well-dispersed homogeneous spherical particles. The vibrational infra-red (IR) spectroscopy record is taken to locate the position of the doping Al³⁺ ion. Using electrical impedance spectroscopy, the resonance and anti-resonance frequencies of the Al modified PLZT system have been determined and analysed. Al addition in PLZT has left a profound effect in its dielectric and piezoelectric properties. An interpretation of the role of Al addition is proposed in terms of structure modification. The sensing power of the investigated material was found useful for the vibration control of a cantilever beam.     

Synthesis and dielectric properties of substituted barium titanate ceramics

Barium titanate is one of the most studied ferroelectric materials which has been used in various forms, e.g. bulk, thin and thick films, powder, in a number of applications. In order to achieve a material with desired properties, it is modified with suitable substituents. Most common substituents have been strontium, calcium and zirconium. Here, we report studies on lead and zirconium substituted barium titanate. The material series with compositional formula Ba_0.80Pb_0.20Ti_1?xZr_xO₃, with x varying from 0 to 0.1, was chosen for investigations. The material was synthesized by solid-state reaction method. Reacted powders compacted in the form of circular discs were sintered at 1300 °C. All the samples were subjected to X-ray diffraction (XRD) analysis and found to have single phase perovskite structure. Dielectric behavior was studied as a function of frequency and temperature. Curie temperature (T_c) was found to decrease with increasing x.