FeCl3溶液中影响Cu蚀刻速度的因素

采用喷蚀的方法，研究了Ｃｕ在２．５ｍｏｌ／ＬＦｅＣｌ３溶液中影响蚀刻速度的几个因素。用ＸＲＤ方法分析了Ｃｕ蚀刻表面的成分，证实了蚀刻过程中ＣｕＣｌ印化膜的形成；研究了蚀刻速度随蚀刻时间的变化规律，经出了初步的解释。     

印刷线路板精细蚀刻的影响因素

为了研究印刷线路板(PCB)精细蚀刻,并初步确定蚀刻的工艺.采用静态蚀刻的方法,通过研究印刷线路板铜箔在酸性CuCl2溶液中影响蚀刻速度的几个因素,得出了蚀刻速度随蚀刻时间的变化规律,并给出了初步的解释;同时得到了蚀刻液中几种不同氯化物添加剂对蚀刻速度的影响,结果表明阴离子不是影响蚀刻速度的唯一因素,阳离子也有一定的影响.     

挤压铸造莫来石短纤维增强Al—4.5Cu复合材料的凝固组织,偏析及性能的研究

本文研究了凝固冷却速度对挤压铸造莫来石短纤维增强Ａｌ４５Ｃｕ复合材料的凝固组织和显微偏析的影响。结果表明：αＡｌ相在短纤维间隙中形核并向纤维表面生长，θＣｕＡｌ２相以莫来石短纤维为基底非均质形核；随凝固冷却速度的减慢，θＣｕＡｌ２相析出量增多且由蠕虫状向块状转变，纤维表面的Ｃｕ浓度增大，纤维间隙中Ｃｕ浓度减小，即Ｃｕ元素的显微偏析增大，复合材料的抗弯强度降低。     

Al70—xCu8Fe10Cr12Cex准晶合金的凝固形貌及组织

研究了Ｃｅ对ＡｌＣｕＦｅＣｒ准晶合金凝固特性的影响。结果表明加入Ｃｅ能提高ＡｌＣｕＦｅＣｒ合金的硬度，加入适量的Ｃｅ可细化晶粒；而且固液界面的生长方式随着Ｃｅ含量的增加而明显改变，使合金凝固形貌表现出由胞状晶向胞状枝晶再向树枝晶转变的规律     

脉动磁场对Al—Cu合金热裂的影响

用对比的方法，研究了脉动磁场对ＡｌＣｕ合金热裂倾向性的影响。实验结果表明：脉动磁场具有缩小ＡｌＣｕ合金有效结晶区间、减小有效结晶区间线收缩之功能，有效地降低了ＡｌＣｕ合金热裂倾向性；磁场频率的影响为：ｆ＝１９５Ｈｚ时热裂纹最小，ｆ＞３７．５Ｈｚ时影响不大。     

Al对18K Au－Cu－Al铸态合金色度的影响

运用现代色度系统、Ｘ射线分析等方法，研究了Ａｌ对Ａｎ—Ｃｕ—Ａｌ合金色度的影响。结果表明：Ａｌ的加入使Ａｕ－Ｃｕ—Ａｌ合金的颜色发生改变，并有漂白作用。     

EuCl3—CaCl2二元系相图

用差热分析法研究了ＥｕＣｌ３ＣａＣｌ２二元体系相图，发现该体系有一个异份熔化化合物ＥｕＣｌ３·３ＣａＣｌ２。体系转熔点为５７０℃，ＥｕＣｌ３摩尔分数４５．４％；低共熔点为５２２℃，ＥｕＣｌ３摩尔分数６６．８％。     

电生亚铜离子库仑滴定Ru（IV）

在含有ＣｕＳＯ４的ＨＣｌ溶液中，利用电生的ＣｕＣｌ对Ｒｕ（ＩＶ）做库仑滴定，获得毫克量钉转化成单一ＲｕＣｌ的最佳途径，结果具有较高的准确度和精度。同时还研究了钌的存在价态和状态。     

金属晶粒自身细化

本文介绍一种金属晶粒细化的新工艺，即利用金属本身已有的非自发形核潜力，使Ａｌ，Ｃｕ，Ｓｂ晶粒细化，探讨了金属自身冷薄片的冷却速度，加入量，保温时间对晶粒细化效果的影响，Ａｌ的自身细化效果与加入适量的Ａｌ－Ｔｉ－Ｂ中间合金相当；Ｃｕ和Ｓｂ的自身细化效果     

定向凝固Al2O3／Al—4.5Cu复合材料显微组织与合金元素的分布

利用ＺＭＬＭＣ定向凝固装置，研究了Ａｌ２Ｏ３／Ａｌ－４．５Ｃｕ金属基复合材料在不同凝固冷却速度条件下的显微组织和合金元素分布的变化，实验结果表明：当凝固速度ｖ＝１６．７μｍ／ｓ时，Ａｌ２Ｏ３／Ａｌ－４．５Ｃｕ复合材料基体组织为胞状晶，胞状晶中无颗粒存在；当ｖ＝４９．８μｍ／ｓ时，基体为树枝状晶，颗粒在枝晶中均匀分布，一二，次枝晶间距随着凝固速度的提高而减小。     

三氯化铁溶液中影响铁镍合金蚀刻速率的因素

采用浸渍蚀刻的方法,研究了影响Fex(x=56～59)Ni1-x合金箔在三氯化铁溶液中蚀刻速率的几个因素,并对蚀刻液的有效蚀刻能力及失效蚀刻液的除镍和再生进行了初步的研究.研究结果表明:氧化还原电位随蚀刻液浓度的增大而升高,氧化还原电位越高,蚀刻反应趋势越大;蚀刻速率随浓度的增加先增大,再下降,且在浓度为40%左右出现极大值;蚀刻液温度越高、pH值越小,蚀刻速率越大;除镍后的失效蚀刻液经再生后能达到新鲜蚀刻液的90%以上,基本达到再生利用的要求.     

喷淋蚀刻模具钢的蚀刻深度研究

采用喷淋式蚀刻机,以FeCl3基蚀刻液对模具钢进行喷淋蚀刻,通过测定不同蚀刻液温度、不同喷淋压力下的蚀刻深度,考察了几个独立因素对蚀刻深度的影响,得出蚀刻深度的规律性变化:蚀刻深度增长速率随蚀刻液温度的升高而增大,随喷淋压力的增大而先增大,后逐渐减小。分析了蚀刻深度呈此种变化规律的原因。     

Fast etching of copper in thionyl chloride/acetonitrile solutions

We report fast etching of copper (Cu) in thionyl chloride (SOCl₂)/acetonitrile (CH₃CN) solutions. The etching rate can be tuned over a wide range by varying the concentration of the etchant, and the stirring rate of the liquid. The etching rate reaches 36 mg min⁻¹ cm⁻² in 1 mol L⁻¹ SOCl₂/CH₃CN under stirring at room temperature, which is much faster than any currently used etchant for Cu. With sonication, the etching rate reaches 320 mg min⁻¹ cm⁻². The chemical reactions involved are studied by X-ray photoelectron spectroscopy and Raman spectroscopy. The fast etching may find important applications in microelectronics.     

湿法刻蚀条件对TFT中Cu电极坡度角和均一性的影响及工艺参数优化

目的 在高世代薄膜晶体管(Thin Film Transistor, TFT)产线的栅极刻蚀制程,明确大气压等离子体(Atmosphere Pressure Plasma, APP)清洗功率、清洗时间及刻蚀时间对刻蚀性能(关键尺寸偏差、均一性、坡度角)的影响规律,并获得最佳工艺条件,进而提升良率。方法 以APP清洗功率、清洗时间和刻蚀时间为影响因素,以关键尺寸偏差(CD Bias)、均一性、坡度角作为因变量,开展正交试验,明确因素影响重要性顺序;然后,对Cu电极坡度角的形成和刻蚀均一性变化进行分析;最后,采用回归分析获得刻蚀性能与刻蚀时间的函数关系式。结果 结果表明:刻蚀时间对刻蚀性能的影响最大,对APP清洁时间和功率的影 响较小。刻蚀时间延长,关键尺寸偏差(CD Bias)增加、均一性变差、坡度角变大。为改善均一性和平缓坡度角,应缩短刻蚀时间。最佳工艺组合为:刻蚀时间85 s,APP电压9 kV,APP传输速度5 400 r/min。结论 刻蚀时间延长,未被光刻胶覆盖的Cu膜层被完全刻蚀,形成台阶,该台阶使刻蚀液形成回流路径。沿着回流路径,刻蚀液浓度、温度逐渐下降,刻蚀均一性由此恶化,坡度角因此增加。采用回归分析得到的刻蚀性能与刻蚀时间的函数关系式,为预测刻蚀效果和优选刻蚀时间提供了依据。     

Submicron-size patterning on the sapphire substrate prepared by nanosphere lithography and nanoimprint lithography techniques

In this paper, we demonstrate and compare the formation of ordered etching masks for submicron-size patterned sapphire substrates through use of the nanosphere lithography and nanoimprint lithography methods. The metal honeycomb network structure and the polymer pillar protrusion structure were obtained from these two methods. Subsequently, the inductively-coupled-plasma reactive ion etching technique was applied to etch the sapphire substrates, and the etchant mixture gases of boron trichloride and argon with the flow rate ratio of 1 to 6 were introduced into the etchant chamber. Two types of submicron -pattern structures were obtained on the sapphire substrate surface after the etching processes were completed. One type of sapphire substrate was the submicron hole array structure and another type was the submicron cone array structure. The working pressure had a considerable effect on the shape geometry and etching rate, and the possible mechanism is discussed.     

膜电解法再生FeCl3蚀刻液的蚀刻性能研究

对某蚀刻厂的废蚀刻液通过膜电解工艺进行再生,并通过蚀刻性能条件实验研究了蚀刻时间、温度、蚀刻液浓度、蚀刻液游离酸含量等因素对蚀刻液 (新蚀刻液、在线蚀刻液、再生蚀刻液) 氧化还原电位和蚀刻速率的影响。结果表明,再生蚀刻液满足蚀刻要求,并且当蚀刻温度为50~60 ℃、蚀刻液浓度为再生蚀刻液浓度的90%、游离酸浓度为0.3 mol/L以上时,再生蚀刻液蚀刻速率最大。     

On the role of pre-existing defects and magnetic flux avalanches in the degradation of YBa2Cu3O7–x coated conductors by quenching

YBa₂Cu₃O_7–x (YBCO) coated conductors are emerging as an important option for magnets for energy systems and experimental science. One of the remaining challenges for YBCO superconducting magnets is quench protection, i.e. ensuring that the YBCO is not damaged due to a fault condition. One key issue is understanding the underlying causes of degradation during a quench. Here, the microstructure of a quenched, degraded sampled is compared to that of an unquenched control sample. To facilitate microstructural analysis of the YBCO surface, the Cu stabilizer and Ag cap layer were removed by etching. Reactions between the Cu etchant and YBCO proved to be a signature of Ag/YBCO delamination. Two types of pre-existing defects were identified as initiation points of degradation. Defects on the conductor edge resulting in delaminated Ag lead to dendritic flux avalanches and high local heating, which cause further Ag delamination. This self-propagating effect results in dendritic Ag delamination, which is seen through etchant–YBCO reactions. Defects within the YBCO layer result in breaches in the protective Ag layer such that Cu etchant penetrates and reacts with the YBCO. Energy-dispersive X-ray spectroscopy analysis showed similar reactions as in the edge degradation but also showed pure Ag particles, which indicates that the local temperature was sufficient to cause localized Ag melting.     

高位阻β-二酮从氨性蚀刻废液中萃取铜

采用高位阻β-二酮（1-（4’十二烷基）苯基-3-叔丁基-1,3-丙二酮）作为萃取剂从模拟印刷电路板（PCBs）蚀刻废液中萃取铜。利用离子强度与萃取反应平衡常数的关系校正模拟的萃取等温线,该模拟萃取等温线与实验测得萃取等温线基本相符。通过实验确定萃取剂浓度、相比、萃取级数和反萃级数等萃取工艺参数。结果表明,在室温下对于铜离子浓度为112g/L、总氨浓度为7mol/L的模拟氨性蚀刻废液的最佳萃取条件为：萃取剂浓度为40%,相比为5：4,萃取时间为5min。在此条件下,经过一级萃取,蚀刻废液中铜离子浓度可降低至63.24g/L,能返回到电路板的生产中循环使用。用含铜30g/L,硫酸浓度180g/L的模拟废电解液对负载有机相进行反萃,相比（O/A）为1：2,经一级反萃,铜的反萃率可达98.27%。     

ISOTROPIC TEXTURING OF POLYCRYSTALLINE SILICON WAFERS

An isotropic etching technique of texturing silicon solar cells has been applied to polycrystalline silicon wafers with different acid concentrations. Optimal etching conditions have been determined by etching rate calculation, scanning electron microscope (SEM) image and reflectance measurement. The surface morphology of the textured wafers varies in accordance with the different etchant concentration which in turn leads to the dissimilarity of etching speed. Textured polycrystalline silicon wafer surfaces display randomly located etched pits which can reduce the surface reflection and enhance the light absorption. The special relationship between reflectivity and etching rate was studied. Reflectance measurements show that isotropic texturing is one of the suitable techniques for texturing polycrys talline silicon wafers and benefits solar cells performances.