Magnetoresistance and magnetization of La2／3 （Ca0. 60 Ba0. 40 ） 1／3 MnO3 in different temperature ranges

A polycrystalline La2/3 (Ca0. 60 Ba0. 40 ) 1/3 MnO3 was prepared by standard solid reaction method. Magnetization(M) and magnetoresistance of the sample were measured between T= 77 K and 350 K. It is found that some correlations exist in the external field dependency of the magnetoresistance magnetoresistance and M in the low and high temperature regions. Moreover, there are different magnetic field dependence of magnetoresistance and magnetization in different temperature ranges, which indicates the presence of different magnetoresistance mechanisms.Based on the models of spin-polarized tunneling and percolation model, the simulated magnetoresistance obtained using Monte Carlo method well explains the experimental fact.     

（1-x）La2／3Ca1／3MnO3／xCr2O3复合材料的电输运性质和磁电阻效应

用固相反应法制备了（1-x）La2／3Ca1／3MnO3/xcr2O3（x为摩尔分数）复合样品，实验研究了在外加0～3T的磁场下，Cr203含量对该复合样品的电输运性质及磁电阻的影响。结果发现随着Cr2O3含量的增加，金属．绝缘体（M-I）转变温度耳急剧降低，并且当Cr2O3，含量x〉0．1时此转变消失。与此同时，电阻率随其含量增加而快速增大，特别的是在样品中观察到了较宽温度范围内显著增强了的磁电阻。这种结果的出现可能与Cr2O3有关的新相偏析在La2／3Ca1／3MnO3（LCMO）晶界和颗粒界面有关。     

Crystal microstructure, infrared absorption, and microwave electromagnetic properties of （La1-xDyx）2/3Sr1/3MnO3

The manganite perovskite polycrystal samples of (La_1−x Dy _x )_2/3Sr_1/3MnO₃ (x = 0, 0.1, 0.2, 0.35, and 0.5) doped with Dy were prepared by solid state reaction in atmosphere to measure their X-ray diffraction (XRD) patterns, scanning electric microscope (SEM) images, infrared absorption spectra, and microwave electromagnetic properties. The displacement of the XRD peaks of the samples was found, and the 2ϑ increases from 0.05° to 0.5°. The grains of undoped La_2/3Sr_1/3MnO₃ not only have the greatest size, but also the most regular shape. The size of the grains decreases as the Dy doping content increases from 0 to 0.5. The infrared absorption spectra of all samples were measured at room temperature. An absorption peak corresponding to the stretching vibration mode of Mn-O bonds appears within the range of 591–629 cm⁻¹. The absorption peak shifts from a higher frequency to a lower one with the decrease of the average ionic radius of A-site. The frequency dependence of microwave-absorbing properties, imaginary components of the complex magnetic permeability μ″ and dielectric permeability ε″ for all samples was measured at room temperature from 8 to 13 GHz. The results show that the loss of microwave absorption can be attributed to both the magnetic and electric losses. The increase of Dy content not only enhances the microwave absorption but also causes the displacement of the absorption peaks.     

La2/3Sr1/3MnO3薄膜的外场诱导电阻变化特性

分别采用固相反应技术和脉冲激光沉积的方法制备了La2/3Sr1/3MnO3靶材和薄膜,并研究了磁场、激光和电流等外场诱导下的薄膜电阻变化特性.结果表明,在铁磁金属相,激光辐照诱导薄膜电阻增大,而电流和磁场作用相似,均诱导薄膜电阻减小,这一现象可归结于不同外场通过改变体系中eg电子的自旋状态而影响体系的输运过程,引起电阻的变化.在顺磁绝缘相,利用小极化子模型进行了分析讨论,表明外场诱导电阻减小主要是由于外场作用使小极化子退局域化.     

Chemical bond properties and Moessbauer spectroscopy in （La1—xMx）2 CuO4（M=Ba,Sr）

By using the average band-gap model,the chemical bond properties of (La1-xMx)2CuO4(M=Ba,Sr) were calculated.The calculated covalencies for Cu-O and La-O bond in the compounds are 0.3 and 0.03 respectively.Moessbauer isomer shifts of ^57Fe doped in La2CuO4 and ^119Sn doped in La2CuO4 were calculated by using the chemical surrounding factor defined by covalency and electronic polarizability.Four valence state tin and three valence iron sites were identified in ^57Fe and ^119Sn doped La2CuO4.     

Preparation and magnetic properties of nanosized （La0. 47Gd0. 2 ） Sr0. 33 MnO3

1INTRODUCTION Themagneticpropertyandcrystalstructureof perovskite typelanthanummanganeseoxideswere firststudiedbyJonkerandVanSantenin1950[1].Thesematerialswereofconsiderableinterestinthe lastdecadeduetotheircolossalmagnetoresistance(CMR)effect[24].Recentlyaseriesofhole dopedperovskitemanganeseoxideswerereportedtodis playalargemagnetocaloriceffect(MCE)inthevic inityoftheferromagneticCurietemperature(Tc)[516],whichmaybeexploitedtobeappliedin magneticrefrigeratorandheatpumps[17].Idealmag…     

Effect of rare earth Pr on microstructure and mechanical properties of Al2O3-SiO2（sf）/Al-Si composites

The Al₂O₃-SiO₂(sf) (volume fraction, 20%)/Al-12.6Si metal matrix composites(MMCs) with or without rare earth Pr addition were fabricated by infiltration squeeze method. Effect of Pr addition on microstructures and fractographs of Al-Si MMCs was investigated by SEM and TEM. Tensile properties at room temperature and 200 °C were tested. It is shown that the addition of Pr is favorable to produce uniform microstructures and modify the eutectic Si crystal effectively. Compounds/intermetallics with high content of Pr are formed at the interface between short fiber and matrix. Yield strength(σ_0.2), ultimate tensile strength(σ_b) and fracture elongation of Al-Si MMCs are improved by adding suitable amount of Pr. Compared with those values of Al-Si based MMC at 200 °C, σ_0.2 and σ_b of MMC with 0.29% Pr are increased by 33% and 55%, respectively. The tensile fracture surface of Al-Si MMCs with Pr addition presents ductile fracture features.     

Structure and transport properties of （La1-x-yYy）2/3Cal/3MnO3 with La-site vacancies

Several samples of manganese oxides La（1-x）2/3Cal/3MnO3 （V-LCMO） and （La0.7-xY0.3）2/3Cal/3MnO3 （x〈0.15） （V-LYCMO） with vacancies at La-site （La-vacancy） were prepared by solid-state reaction method. The X-ray diffraction（XRD） patterns refined by Rietveld confirm that these compounds exhibit single phase structure with orthorhombic symmetry （Pnma）. The lattice parameters, Mn-O bond length and Mn—O—Mn bond angle vary with La-vacancy concentration, as an indication of the occurrence of the local Jahn-Teller effect. The measurement result of V-LCMO compounds shows that the maximum magnetoresistance（MR） is about 220% at TIM=268 K and La-vacancy content x=0.04. For V-LYCMO compounds, there exists metal-insulator transition at about 50 K, and a very large MR （over 106%） is observed at the temperature ranging from 40 K to 50 K.     

Effect of （Ba＋Sr）/Ti ratio on dielectric and tunable properties of Ba0.6Sr0.4TiO3 thin film prepared by sol-gel method

Ba0.6Sr0.4TiO3 （BST） thin films were fabricated on Pt coated Si （100） substrates by sol-gel techniques with molar ratio of （Ba＋Sr） to Ti changing from 0.76 to 1.33. The effect of （Ba＋Sr）/Ti ratio deviating from the stoichiometry on microstructure, grain growth, dielectric and tunable properties of BST thin films were investigated. TiO2 and （Ba,Sr）RTiO4 were found as a second phase at the ratios of 0.76 and 1.33, respectively. The variation of the ratio reveals more significant effect on the grain size in B-site rich samples than that in A-site rich samples. The dissipation factor decreases rapidly from 0.1 to 0.01 at 1 MHz with decreasing （Ba＋Sr）/Ti ratio. The tunability increases with decreasing ratio from 1.33 to 1.05, and then decreases with decreasing ratio from 1.05 to 0.76. The film with （Ba＋Sr）/Ti ratio of 1.05 has a maximum tunability of 32% and a dissipation factor of 0.03 at 1 MHz.     

Structure and electrical properties of （1-x）BaTiO3W（x）La2/3- Srl/3Mn03 composites

Liquid-phase sintering method was used to prepare BaTiO3 powders and the structure and electrical properties of (1-x)BaTiO3+(x)La2/3Sr1/3MnO3 (LSMO) composites ...     

Effect of second introduced phase on magnetotransport properties of La2/3Sr1/3MnO3/0.33(CuO, ZnO, Al2O3) composites

The structure, magnetic and magnetotransport properties of La2/3Sr1/3MnO3(LSMO)/0.33(CuO, ZnO, Al2O3) composites were investigated to explore the role of second introduced phase. The microstructural analysis shows two kinds of grain boundaries: LSMO/LSMO and LSMO/second phase/LSMO. Two maximal resistivities appear in LSMO/0.33CuO and LSMO/0.33ZnO composites while the resistivity of LSMO/0.33Al2O3 decreases monotonically with increasing the temperature from 200 K to 400 K. Moreover, the temperature dependence of magnetoresistance(MR) of LSMO/0.33Al2O3 that decreases monotonically with increasing the temperature is different from that of LSMO/0.33CuO and LSMO/0.33ZnO. A developed two-channel model consisting of scattering model and tunneling model was proposed to fit the resistivity-temperature curves of these composites. The role of second introduced phase and the magnetotransport mechanism of these composites were elucidated.     

Emissivity of La1-xSrxMnO3/acrylic Resin Thermal Control Coating

Thermal control coatings were fabricated by mixing of La1-xSrxMnO3(LSMO)powder and acrylic resin and brushed on Al alloy substrate.The powders of La0.7Sr0.3MnO3 and La0.8Sr0.2MnO3 were prepared using sol-gel method.XRD results reveal the phase structure of LSMO powders are perovskite.The transition temperature from metal to insulator of La0.7Sr0.3MnO3 and La0.8Sr0.2MnO3 are 300 and 275 K,respectively.The emissivity evolution with temperature of the coatings was measured.For La0.7Sr0.3MnO3/acrylic resin coating,the emissivity increases from 0.56 to 0.88,and for La0.7Sr0.3MnO3/acrylic resin coating from 0.50 to 0.90.     

Enhancement of room-temperature magnetoresistance in La0.5Sm0.2Sr0.3MnO3/（Ag2O）x/2

La0.5Sm0.2Sr0.3MnO3/(Ag2O)x/2 (x = 0.00, 0.04, 0.08, 0.25, 0.30) samples were prepared by the solid-state reaction method, and their transport behaviors, transport mechanism, and magnetoresistance effect were studied through the measurement and fitting of ρ-T curves. The results show that the element Ag takes part in reaction when the doping amount is small. Ag is mainly distributed at the grain boundary of the host material and is in metallic state when the doping amount is relatively large; then the system becomes a two-phase composite. A small amount of Ag doping can apparently increase grain-boundary magnetoresistance induced by the spin-dependent scattering. The resistivity of the sample doped with 30 mol% Ag is one order of magnitude smaller than that of low-doped samples, and its magnetoresistance in the magnetic field of 0.5 T and at 300 K is strengthened apparently reaching 9.4%, which is connected not only with the improvement of the grain-boundary structure of the host material but also with the decrease of material resistivity.     

Theoretical and experimental investigation on giant magnetoresistive materials with amorphous ferromagnetic layer

Pseudo-spin-valve （PSV） sandwiches using amorphous CoNbZr alloy as soft magnetic layer were fabricated by magnetron sputtering. The giant magnetoresistance （GMR） and its dependence on the thickness of magnetic layer were investigated. Anti-parallel magnetization alignments were observed in the samples with very thin CoNbZr thickness （2-4 nm） and a maximum GMR ratio of 6.5% was obtained. The Camley-Barnas semiclassical model was extended for amorphous layer based ：nagnetic sandwiches by considering that the mixed layers exist between the ferromagnetic and nonmagnetic layer. The calculated results agree with the experimental results very well, indicating that the new model gives a more realistic picture of the physical processes that take place in the magnetic sandwiches. Moreover, the calculated results for amorphous sandwiches also clarify that the occurrence of maximum GMR at very small thickness of amorphous layer is ascribed to the short mean-flee-path in amorphous materials.     

固相法制备La2/3Sr1/3MnO3∶Agx多晶材料及其性能研究

采用固相法合成制备La2/3Sr1/3MnO3∶Agx(LSMO∶Agx,其中x为Ag掺杂量的摩尔比,x=0.00、0.10、0.20、0.30、0.40)多晶材料.通过X射线衍射和R-T对LSMO∶Agx材料的结构和性能进行测试分析.结果表明:La2/3Sr1/3MnO3∶Agx(x=0.00,0.10,0.20,0.30,0.40)多晶样品,x=0.00样品研磨后的粉体粒度D50=6.66 μm,所有样品都具有正交菱面体结构,没有出现Ag元素的衍射峰,这与Ag在高温烧结时的挥发有关;随着Ag掺杂量从x=0.00增加到x=0.40,样品的晶胞体积在348.6～350.6(A),说明Ag并没有有效替位掺杂,主要以晶界析出为主;随着Ag掺杂量的增加,电阻率归一化值随之下降,样品电阻率降低;LSMO∶Agx多晶材料Tp值在253～298K,且随组分增加呈上升趋势.     

The effect of lattice strain on step edge diffusion

The effects of lattice strain on the step edge diffusion of Ag(111) and Ag(100) surfaces are analyzed using molecular statics (MS) based on the semi-empirical embedded atom method (EAM) potential. The calculation of activation barriers of adatom diffusion on surfaces, diffusion over step edge, island corner diffusion, and diffusion along step under strained conditions shows that lattice strain greatly affects the energy barriers of various diffusion processes. For example, comparison shows that the Ehrlich-Schwoebel (ES) barrier decreases as lattice strain increases, which is opposite with strain dependency of surface diffusion barrier, and the diffusions along two different types of steps on Ag(111) surface have a lattice strain dependency different from each other. These different diffusion barrier behavior dependencies on lattice strain have interesting implications on the morphological evolution of strained thin film. This article is based on a presentation made in the 2002 Korea-US symposium on the “Phase Transformations of Nano-Materials,” organized as a special program of the 2002 Annual Meeting of the Korean Institute of Metals and Materials, held at Yonsei University, Seoul, Korea on October 25–26, 2002.     

钛-铜基阳极表面电势分布及其电化学性能

：提出利用钛-铜层状复合材料替代传统钛电极单一钛基体,对比研究其涂层电极与传统钛涂层电极的性能差异,分析了电极的表面电势分布和线性扫描伏安（LSV）曲线。结果表明：钛-铜基涂层电极对基体材料的改进,提高了电极的导电性,有利于均化电极表面电势分布和电流分布,提高了极板的电催化活性,同时具有优良的高电流密度反应稳定性。应用于电解工业时,钛-铜基涂层电极能有效地降低槽电压,提高工作电流密度,从而提高电流效率和时效产率。     

金属-氧化物扩散障的理论计算SCIEI

本文在Luthra模型基础上考虑到氧化物的加入对元素通过短路通道的扩散没有阻碍作用,建立了金属-氧化物扩散障的修正模型。计算结果与实验规律吻合。     

Structural, magnetic and magnetotransport properties of La0.8Sr0.2MnO3/xLaMnO3 composites

The effect of LMO doping on the structure, magnetic and magnetotransport properties of La_0.8Sr_0.2MnO₃ (LSMO)/xLaMnO₃ (LMO) has been investigated. Two types of LSMO/xLMO composites, named as SL_x (low temperature sintered samples) and SH_x (high temperature sintered samples) samples, were prepared by different sintering temperature and solid-state reaction method. The presence of LMO at the grain boundaries increases the disordered states at the surface of the grains and therefore the magnetization and transition temperature decrease by increasing the amount of LMO doping level. Results show that the rate of decreasing of transition temperature is much more for high temperaure sintered samples. Also the resistivity of samples increases by the increase of LMO doping level. Results also show that the LMO doping has an effect on a low field magnetoresistance (LFMR). The value of LFMR increases for low doping level of 0 ≤ x ≤ 15, for SL_x samples and 0 ≤ x ≤ 10 for SH_x samples. Also LFMR decreases at high doping level. The spin dependent tunneling and scattering at the interfaces of the grain boundaries are responsible for the increase of LFMR at low doping level, while reduction of LFMR at high doping level may result from the grain boundary becoming too thick for electron tunneling.     

Single-atom spintronics

Recent work on magnetic quantum point contacts （QPCs） was discussed. Complete magnetoresistance loops across Co QPCs as small as a single atom was measured. The remarkable feature of these QPCs is the rapid oscillatory decay in magnetoresistance with the increase of contact size. In addition, stepwise or quantum magnetoresistance loops are observed, resulting from varying transmission probability of the available discrete conductance channels because the sample is cycled between the ferromagnetic （F） and antiferromagnetic （AF） aligned states. Quantized conductance combined with spin dependent transmission of electron waves gives rise to a multi-channel system with a quantum domain wall acting as a valve, i.e., a quantum spin-valve. Behavior of a few-atom QPC is built on the behavior of a single-atom QPC and hence the summarization of results as ＇single-atom spintronics＇. An evolutionary trace of spin-dependent electron transmission from a single atom to bulk is provided, the requisite hallmarks of artefact-flee magnetoresistance is established across a QPC - stepwise or quantum magnetoresistance loops and size dependent oscillatory magnetoresistance.