症状性大脑中动脉粥样硬化性狭窄支架植入术后血流动力学研究

【摘要】 目的 探讨症状性大脑中动脉粥样硬化性狭窄患者接受颅内支架植入术前后脑血流动力学变化。方法 回顾成功实施颅内支架植入术的39例症状性大脑中动脉粥样硬化性狭窄患者基线资料,对采用经颅多普勒超声检测术前、术后1周、术后3个月大脑中动脉狭窄段收缩期峰值流速（PSV）和脉动指数（PI）进行分析,比较手术前后病变血管血流动力学变化。结果 39例患者中1例术后狭窄改善不明显,38例动脉平均管径狭窄率由治疗前（80.3±8.5）%改善为术后即刻（16.3±9.2）%（P=0.011）。术后1周、术后3个月大脑中动脉狭窄段PSV与术前比较有明显降低（P=0.023）,PI也较术前明显降低（P=0.028）。术后3个月时2例患者平均PSV回复升高31%～39%;术后3个月与术后1周比较,平均PSV略有升高（P=0.129）,PI稍有增高（P=0.115）,但差异无统计学意义。结论 症状性大脑中动脉粥样硬化性狭窄患者接受颅内支架植入术后短期内脑血流得到有效增加,长期血流改善程度有待观察。

     

The fabrication and investigation of <Emphasis Type="Italic">n</Emphasis>/CdS-<Emphasis Type="Italic">p</Emphasis>/CdTe-<Emphasis Type="Italic">n</Emphasis>/Si structures

Attempts to obtain heterojunctions between A²B⁶ (cadmium telluride and cadmium sulfide) compounds and silicon were made. The distributions of chemical components and some photoelectric properties of the surfaces of the produced layers were investigated.     

Thermovoltaic effect of <Emphasis Type="Italic">p</Emphasis>Si-<Emphasis Type="Italic">n</Emphasis>(Si<Subscript>2</Subscript>)<Subscript>1−x</Subscript>(ZnS)<Subscript>x</Subscript> structures

The pSi-n(Si₂)_1−x (ZnS) _x (0 ≤ x ≤ 0.92) structure, on which thermovoltaic effect is observed, has been obtained by means of liquid-phase epitaxy from tin solution-melt on plates of p-type technical silicon. This effect is explained by grain boundary defects and influence of ZnS impurities in a thin layer adjacent to the p-n-junction.