太阳X射线成像望远镜低噪声信号采集系统

太阳X射线成像望远镜是我国正在研制的第一台观测太阳10nm以下X射线活动的空间仪器,采用背照射式全耗尽型短波敏感CCD作为成像传感器,利用低噪声信号采集系统采集X射线CCD中的电荷信号,生成图像数据.文章在详细介绍X射线CCD输出结构的基础上,分析了CCD输出信号产生的过程,复位噪声产生原因和CCD输出信号的特点,引出了对信号采集系统性能指标和电路结构的要求.继而介绍了信号采集系统的各组成部分,包括前置放大电路,相关双采样电路,主放大器和AD转换电路,重点分析了相关双采样电路的原理,文中给出了各部分的设计参考和测试结果,最后总结了空间相机低噪声信号采集系统的设计原则.测试结果表明该系统成功抑制了噪声,满足太阳X射线观测的要求.     

全帧CCD探测器CT扫描数据读出与拖影校正研究

以光纤耦合全帧CCD方式制作的X射线探测器在实验室高精度X射线CT扫描中广泛应用。由于X射线的强穿透特性,全帧CCD探测器通常工作在无快门模式,图像拖影是该模式下必定存在的伪影。本文针对全帧CCD探测器CT扫描图像拖影校正进行研究,提出了非曝光行校正法校正投影图像拖影,避免了利用暗像元校正法校正投影图像拖影时可能会带来的条形伪影;针对动态曝光CT扫描,设计了基于辐射屏蔽的投影图像感兴趣区域快速读出模式,通过降低电荷转移时间有效抑制投影图像拖影的产生,提高探测器有效信号动态范围。实验结果表明：应用非曝光行校正法能有效校正投影图像拖影、提高投影图像质量;采用投影图像感兴趣区域快速读出模式可有效解决动态曝光CT扫描图像拖影校正难题。     

CsI(Tl)晶体的APD前端读出特性研究

雪崩光电二极管(Avalanche photodiode,APD)体积小、探测效率高、内置增益、对磁场不敏感,但其内置增益、输出脉冲信号的信噪比受偏置电压与温度影响明显。将APD作为Cs I(Tl)闪烁晶体的光电读出器件,并配以低噪声的电荷灵敏前置放大器,组成闪烁探测器的探头。在不同的偏置电压与温度下,测试了该探头组成的闪烁探测器的能量分辨率。实测表明,偏置电压、温度将影响探测系统的能量分辨率,在室温且APD两端的偏置电压为370 V时,对能量为662 ke V的γ射线能量分辨率为4.98%;在-20-40oC内,能量分辨率随温度的降低而提高。     

水下冲击波超压高速采集测试技术研究

针对冲击波场测量中存在的通用测试系统采样速度较慢、布设不方便等问题,研制了具有增益可调和无线数据传输功能的新型高速冲击波压力测试系统,信号输入级使用电荷输出型压电传感器并设计了信号调理电路,存储模块使用铁电存储器实现高速存储省略了传统的缓存电路。经试验证明系统能够稳定运行,并能够适用多种电荷输出型传感器。     

GEM探测器高速数据采集系统设计

介绍了基于以太网的GEM探测器高速数据采集系统的设计。该系统将GEM探测器输出的电荷信号转换为数字信号并写入FPGA进行分析和处理,处理后的数据通过千兆以太网进行传输。主机电脑接收以太网传输的电荷信号的位置信息,绘制电荷信号的位置分布图。实验测试表明:该系统能检测到探测器输出的位置信息并绘制出X射线信号的位置分布图。     

基于硅光二极管阵列的X射线探测器的研制

介绍了10元CsI(Tl)闪烁晶体与10元硅光二极管阵列耦合而成的X射线探测器的设计制造过程。其中,二极管光敏元为0.75mm×1.25mm的窄条形,中心距为1.25mm,外观尺寸为12.5mm×1.25mm;闪烁体单元为1.0mm×1.5mm的窄条形,中心距为1.25mm,外观尺寸为12.5mm×1.9mm。对该探测器的硅光二极管进行了光谱测试和噪声测试,对射线探测器进行了串音和均匀性等性能测试。二极管的噪声为10?4V,射线探测器的非均匀性为0.08,有串音现象发生。对存在的问题进行了分析讨论并提出了改进方案。     

半导体探测器输出电流检测系统前置放大器设计

为满足半导体探测器输出电流检测系统的需求,设计了与之相适应的前置放大器。该前置放大器基于超低偏置电流运放ADA4530,采用单个反馈电阻和T型反馈网络的I/V变换前置放大电路组成。测试结果表明:该前置放大器的放大倍数可达10 mV/pA,直流偏移为8μV;对于pA级分辨率,其输出噪声电压频谱密度仅为17.75 nV/(Hz)~(1/2),输出总噪声为409μV;可用于μA~pA范围内的核辐射探测器电流信号测量。     

ITER软X射线检测系统及其电磁兼容设计

国际热核聚变实验反应堆是世界上在建的最大的磁约束聚变装置托克马克装置,通过对其中软X射线的测量,可实现等离子体辐射对锯齿、色骨模等磁流体现象的物理研究和成像反演。软X射线诊断系统就是用来检测软X射线的设备。由于热核聚变时恶劣电磁环境及远距离传输,在设计信号检测系统时必须进行电磁兼容设计,以降低系统噪声、提高检测精度。本文中使用的检测电路采用差分结构实现电流信号到电压信号的转换,重点研究检测电路的实现及其电磁兼容设计。从电磁抗干扰的三要素出发,结合实验测试,针对电磁干扰的特殊性,讨论了滤波电路设计、印制电路板(Printed Circuit Board,PCB)走线、电磁屏蔽及信号接地在系统中实现。本文采用32通道板卡集成设计;信号增益提高至107 V?A-1;放大器带宽达到120 k Hz。通过测试结果可以看出,信号噪声降至8 mV。通过优化设计提高了检测电路的集成度和放大电路的增益及带宽,同时降低了检测电路的噪声。     

CVD金刚石膜X射线探测器的研制及性能研究

金刚石以其独特的性能成为辐射探测器的理想材料.采用HFCVD方法制备了高质量、(100)取向的CVD金刚石膜,在此基础上研制出X射线探测器.使用55Fe 5.9keV X射线研究了CVD金刚石膜探测器的光电流和电荷收集效率.结果表明,探测器在偏压加到100V还具有好的欧姆接触;电场为50kV·cm-1时的暗电流与光电流分别为16.3和16.8nA;电荷收集效率η为45.1%,对应的电荷收集距离δ(CCD)为9.0μm.     

多类图像传感器模组电离辐射损伤对比研究

为选择能用于γ射线辐照环境且最具有加固潜力的图像传感器模组,对比分析了7类传感器模组辐照前后实时采集明、暗图像的参数,研究了不同类型的模拟图像传感器模组及数字图像传感器模组的抗辐射性能,并讨论了辐射损伤机理。实验结果表明：γ射线对图像传感器模组的损伤及干扰程度与模组类型、图像传感器制作工艺、辐照剂量率及总剂量相关;剂量率造成的干扰与剂量率并非呈单纯的线性关系;镜头透镜的透光率随累积剂量的增大而下降;入射γ射线对采集画面质量的干扰与环境光线强度相关,较弱的真实信号更易被入射光子引入的噪声淹没。以上结果提示,入射γ射线对图像传感器的损伤及干扰主要是由各像素单元内暗电流以及正向脉冲颗粒噪声引起的。经实验分析,采用互补金属氧化物半导体（CMOS）工艺的数字摄像机更适用于γ射线辐射环境中的实时监测,但仍需通过加固手段提高其在辐射环境中工作的可靠性和使用寿命。     

基于3D Si PIN阵列热中子探测器的变增益宽动态前端读出电子学设计

基于Si CMOS技术的前端读出ASIC主要是根据3D Si PIN阵列热中子探测器的输出信号特性设计的。所设计的读出ASIC的主要电路模块包括电荷灵敏放大器（CSA）、模拟开关设计、具有三级电荷灵敏自动转换的自动增益控制模块（AGC）、相关双采样（CDS）和基准电流源电路。仿真结果表明,前端电路的输入动态范围为10 fC~80 pC。根据热中子探测器输出信号特性设计的ASIC的3个增益系数分别为19 V/pC、039 V/pC和94 mV/pC。所设计的ASIC的积分非线性小于 1%。单通道静态功耗约为 536 mW。零输入探测器电容时的等效噪声电荷为2416e-。计数率可达1 MHz 。     

A novel radiation imaging sensor based on self-activated pixels

A new position sensitive detector for charged particles and X-rays is proposed based on pixels containing MOS transistors as preamplifiers. The output of the preamplifiers is shorted to strip buses to obtain two-dimensional information with readout requirements similar to a strip detector. The total pixel capacitance is low enough (20-40 fF) to allow a large potential increase at the pixel that collected the charge. The nonlinearity introduced by the large voltage rise effectively switches on the transistors of this pixel and leaves all the other pixels of the same line at a low transconductance state, resulting in an excellent noise performance     

X-ray detection based on complementary metal-oxide-semiconductor sensors

Complementary metal-oxide-semiconductor(CMOS) sensors can convert X-rays into detectable signals; therefore, they are powerful tools in X-ray detection applications. Herein, we explore the physics behind X-ray detection performed using CMOS sensors. X-ray measurements were obtained using a simulated positioner based on a CMOS sensor, while the X-ray energy was modified by changing the voltage, current, and radiation time. A monitoring control unit collected video data of the detected X-rays. The video images were framed and filtered to detect the effective pixel points(radiation spots).The histograms of the images prove there is a linear relationship between the pixel points and X-ray energy. The relationships between the image pixel points, voltage, and current were quantified, and the resultant correlations were observed to obey some physical laws.     

半导体阵列微剂量探测器前端读出电路设计

根据三维Si SOI PIN像素微剂量探测器特性参数,设计了一种基于GF chrt018IC CMOS工艺的前端读出电路。该读出电路主要包括PMOS输入的电荷灵敏前前置放大器,有源整形滤波电路,电压比较器及基准电流源等,可实现对微剂量信号的放大、滤波降噪、甄别输出等功能。仿真测试表明:能量探测范围为5~500 fC,单通道功耗约为2 mW,总噪声性能为0.05 f C+1.6×10~(-3)fC/pF。     

RG64—High Count Rate Low Noise Multichannel ASIC With Energy Window Selection and Continuous Readout Mode

We report on the performance of a low noise and high count rate readout ASIC with binary architecture and energy window selection for X-ray imaging applications using semiconductor detectors. The ASIC called RG64 is designed in 0.35 mum CMOS process and its total area is 3900times5000 mum². The core of RG64 consists of 64 readout channels. Each channel is built of a charge sensitive amplifier with a second order shaper of peaking time 75 ns, two independent discriminators with an 8-bit offset correction circuit and two independent 20-bit counters with RAM memory buffers. The ENC of the circuit reaches the value of about 126 el. rms with 1 pF input load and 5 mW power consumption per single channel. The mean gain in the multichannel ASIC is about 50 muV/el., with the dispersion from channel to channel of 0.9% (on one sigma level). The deviation of the effective threshold voltage spread for given energy can be reduced to less than 7 el. rms (calculated to the charge sensitive amplifier input). High count rate measurements have been performed up to 2 Mcps of average rate of input pulses, both for AC and DC coupled silicon strip detectors with X-ray photons of energy 8.04 keV. The RG64 can operate both in the continuous readout mode and in the readout mode separate from exposure.     

Low-Power Amplifier-Discriminators for High Time Resolution Detection

Low-power amplifier-discriminators based on a so-called NINO architecture have been developed with high time resolution for the readout of radiation detectors. Two different circuits were integrated in the NINO13 chip, processed in IBM 130 nm CMOS technology. The LCO version (Low Capacitance and consumption Optimization) was designed for potential use as front-end electronics in the Gigatracker of the NA62 experiment at CERN. It was developed as pixel readout for solid-state pixel detectors to permit minimum ionizing particle detection with less than 180 ps rms resolution per pixel on the output pulse, for power consumption below 300 muW per pixel. The HCO version (High Capacitance Optimization) was designed with 4 mW power consumption per channel to provide timing resolution below 20 ps rms on the output pulse, for charges above 10 fC. Results presented show the potential of the LCO and HCO circuits for the precise timing readout of solid-state detectors, vacuum tubes or gas detectors, for applications in high energy physics, bio-technologies or medical imaging.     

Single event effects in static and dynamic registers in a 0.25μm CMOS technology

We have studied single event effects in static and dynamic registers designed in a quarter micron CMOS process. In our design, we systematically used guardrings and enclosed (edgeless) transistor geometry to improve the total dose tolerance. This design technique improved both the SEL and SEU sensitivity of the circuits. Using SPICE simulations, the measured smooth transition of the cross-section curve between LET threshold and saturation has been traced to the presence of four different upset modes, each corresponding to a different critical charge and sensitive area. A new architecture to protect the content of storage cells has been developed, and a threshold LET around 89 MeV cm ² mg^-1 has been measured for this cell at a power supply voltage of 2 V     

Counting and Integrating Readout for Direct Conversion X-ray Imaging: Concept, Realization and First Prototype Measurements

A novel signal processing concept for X-ray imaging with directly converting pixelated semiconductor sensors is presented. The novelty of this approach compared to existing concepts is the combination of charge integration and photon counting in every single pixel. Simultaneous operation of both signal processing chains extends the dynamic range beyond the limits of the individual schemes and allows determination of the mean photon energy. Medical applications such as X-ray computed tomography can benefit from this additional spectral information through improved contrast and the ability to determine the hardening of the tube spectrum due to attenuation by the scanned object. A prototype chip in 0.35-micrometer technology has been successfully tested. The pixel electronics are designed using a low-swing differential current mode logic. Key element is a configurable feedback circuit for the charge sensitive amplifier which provides continuous reset, leakage current compensation and replicates the input signal for the integrator. This paper will discuss measurement results of the prototype structures and give details on the circuit design     

CMOS APS用移位寄存器抗SEU加固方法

电离辐射环境中使用的CMOS 有源像素图像传感器(APS)的基于反相器的准静态移位寄存器容易发生单粒子翻转(SEU),而致使CMOS APS不能正常工作。本文对基于反相器的准静态移位寄存器中的单粒子翻转效应进行了分析,其对单粒子瞬态(SET)最敏感的节点存在于反相器的输入端,反相器的输入阈值电压和输入节点电容决定了其抗SEU的能力。提出了用施密特触发器代替反相器的加固方案,因施密特触发器的电压传输特性存在一滞回区间,所以有更高的翻转阈值,从而可获得更好的抗SEU能力。仿真结果表明,采用施密特触发器的移位寄存器结构较原电路结构的抗SEU能力提高了约10倍。     

A 64-Channel Wide Dynamic Range Charge Measurement ASIC for Strip and Pixel Ionization Detectors

In this paper we report a 64-channel application specified integrated circuit (ASIC) for the readout of parallel plate strip and pixel ionization detectors. The detectors measure the intensity and the geometrical characteristics of a hadron beam for hadrontherapy cancer treatments. The ASIC is based on a current to frequency converter followed by a counter. It uses a charge balancing integration technique to obtain a dynamic range in excess of$10^5$with a nonlinearity of less than 1%. The ASIC has been designed in a CMOS 0.8$mu m$technology and it has been used for the readout of both strip ionization detectors for beam calibration and pixel detectors for beam monitoring during treatment. A new version of the chip in CMOS 0.35$mu m$technology which allows bipolar input currents has been designed and is currently under test.