Enhanced angular current intensity from Schottky emitters

Even though the Schottky emitter is a high‐brightness source of choice for electron beam systems, its angular current intensity is substantially lower than that of thermionic cathodes, rendering the emitter impractical for applications that require high beam current. In this study, two strategies were attempted to enhance its angular intensity, and their experimental results are reported. The first scheme is to employ a higher extraction field for increasing the brightness. However, the tip shape transformation was found to induce undesirably elevated emission from the facet edges at high fields. The second scheme exploits the fact that the angular intensity is proportional to the square of the electron gun focal length [ Fujita, S. & Shimoyama, H. (2005) Theory of cathode trajectory characterization by canonical mapping transformation. J. Electron Microsc. 54 , 331–343], which can be increased by scaling‐up the emitter tip radius. A high angular current intensity (J_Ω∼ 1.5 mA sr⁻¹) was obtained from a scaled‐up emitter. Preliminary performance tests were conducted on an electron probe‐forming column by substituting the new emitter for the original tungsten filament gun. The beam current up to a few microamperes was achieved with submicron spatial resolution.     

Initial resolution measurements of miniaturized electrostatic lenses for LVSEM

Theoretical and experimental investigations on miniaturized electrostatic lenses for high-resolution low-voltage scanning electron microscopical applications are presented. The electron optical column consists of a Schottky emitter including the extraction anode and a miniaturized three electrode lens consisting of conventional (electron microscopical) platinum apertures. The lens has been optimized with respect to resolution and a value of about 5 nm at a working distance of 1 mm and a beam energy of 1 keV is predicted by simulation. Details on the resolution measurements are presented. An initial experimental value amounts to 31 nm. Specific problems encountered during building and alignment of the lens and measuring the resolution are discussed as well.     

Generation of narrow focused beams in a plasma-cathode electron gun

The possibility of generating a narrow focused electron beam in a plasma-cathode electron gun has been studied. An operating mode in which the emitting plasma surface is deep in the emitting channel is optimal for obtaining the highest emission-current density. The beam diameter is reduced by a factor of 1.5–2.0 by choosing the operating mode of the plasma emitter. A two-lens focusing system is used to focus the electron beam. Studies have shown the possibility of generating beams with a power density five to seven times higher than that attained earlier in plasma-cathode guns. As a result of these studies, a plasma-cathode electron gun that allows generation of an electron beam with a diameter of ～260 μm and a power of 3 kW at an accelerating voltage of 30 kV has been developed.     

Magnetic field emission gun with zirconiated emitter

A magnetic-field-superimposed field emission gun with low aberrations and equipped with a zirconiated tungsten emitter has been developed for applications where very stable high probe currents are required. It has been tested on a conventional electron microscope at 10 kV and on an electron beam testing system at 1 kV. Probe current i = 250 nA in a probe size d = 0.4 μm is obtained at 10 kV; at 1 kV the resolution is 0.1 μm with i = 5 nA, and 0.4 μm with i = 30 nA. For these probe currents, the spatial broadening effect due to electron–electron interactions in the beam is the preponderant factor limiting the probe size.     

Improving the energy spread and brightness of thermal-field (Schottky) emitters with PHAST—PHoto Assisted Schottky Tip

Using a relatively simple model of photoemission we derive an expression for the reduced on axis brightness of a thermal-photofield emitter. We then show that it is theoretically possible to reduce the energy spread of a Schottky (thermal field) emitter whilst increasing the reduced brightness. This can be achieved by the illumination of the tip with a high intensity laser light. We call the source PHAST—PHoto Assisted Schottky Tip. We find that due to the strong E-fields applied PHAST may operate at photon energies below the (Schottky reduced) work function. Thus removing the need for UV lasers, we will show that it is in fact preferable to work in the red, or in the green. The necessary laser intensities probably limit the application to pulsed operation.     

Electron beam confinement and image contrast enhancement in near field emission scanning electron microscopy

In conventional scanning electron microscopy (SEM), the lateral resolution is limited by the electron beam diameter impinging on the specimen surface. Near field emission scanning electron microscopy (NFESEM) provides a simple means of overcoming this limit; however, the most suitable field emitter remains to be determined. NFESEM has been used in this work to investigate the W (1 1 0) surface with single-crystal tungsten tips of (3 1 0), (1 1 1), and (1 0 0)-orientations. The topographic images generated from both the electron intensity variations and the field emission current indicate higher resolution capabilities with decreasing tip work function than with polycrystalline tungsten tips. The confinement of the electron beam transcends the resolution limitations of the geometrical models, which are determined by the minimum beam width.     

‘Open-loop’ tracking interferometer for machine tool volumetric error measurement—Two-dimensional case

The tracking interferometer, or the laser tracker, is a laser interferometer with a steering mechanism to regulate the laser beam direction to follow a retroreflector (“target”). Applying the multilateration principle, it measures the target's three-dimensional position at an arbitrary location in the workspace. Its application to the volumetric accuracy measurement for coordinate measurement machines or machine tools has been long studied. In this paper, we propose the ‘open-loop’ tracking interferometer, where the laser beam is regulated toward the command target position. This eliminates the automated tracking mechanism and thus may significantly reduce the manufacturing cost of conventional tracking interferometers. The objective of this paper is to validate this ‘open-loop’ tracking interferometer concept by investigating its measurement uncertainty both experimentally and analytically. To simplify the problem, this paper focuses on the measurement of the target's two-dimensional position by using a single-axis ‘open-loop’ tracking interferometer prototype.     

Friction of PM ferritic stainless steels at temperatures up to 300 °C

Two ferritic stainless steels (409Nb and 434L) manufactured through powder metallurgical techniques were wear tested at different temperature conditions (up to 300 °C). Two sliding speeds were used, and tests were carried out against a wrought austenitic stainless steel. Materials’ wear performance was characterized through friction coefficients and analysis of wear tracks was carried out through scanning electron microscopy. Results have shown an adhesive wear mechanism. Oxidized ferrite particles have also been found on wear tracks.     

Electron diffraction from micro- and nanoparticles of hydroxyapatite

Hydroxyapatite (HAP) obtained from aqueous solutions under different conditions has been examined by high-resolution transmission electron microscopy (HRTEM) and electron diffraction, including selected-area electron diffraction (SAED) and microdiffraction. A Philips CM300 field-emission gun electron microscope with a Schottky W/ZrO field-emission tip and a spherical aberration constant of 0.65 mm was used at 300 kV. The HAP crystals had different sizes, ranging from a few nanometres to a few micrometres. Single-crystal diffraction patterns have been obtained from the largest microcrystals using the conventional SAED technique. Assemblies of nanoparticles gave only broad diffuse rings. Nevertheless, microdiffraction with electron microprobes 3.5–10 nm in diameter clearly indicated the crystalline character of the nanoparticles in these assemblies. Experimental HRTEM images, Fourier transforms and calculated images exhibited the fine structure of the HAP crystals.     

Development of a high-voltage waveguide photodetector comprised of Schottky diodes and based on the Ge–Si structure with Ge quantum dots for portable thermophotovoltaic converters

This paper demontstrates the possibility of developing a high-voltage waveguide photodetector comprised of Schottky diodes and based on a Au/Ge — Si structure with Ge quantum dots pseudomorphic to a silicon matrix, which ensures an increase in the external quantum yield and open-circuit voltage. It is shown on this photodetector that there is a great increase and broadening in sensitivity up to λ = 2.1 μm, which coincides with the main radiation range of a black (gray) body at the emitter temperatures from 1200 to 1700 °C, practically used in thermophotovoltaic converters. This state of the ensemble of Ge quantum dots by means of molecular beam epitaxy can be obtained only under the condition of low growth temperature (250–300 °C). It is established that, below the Si absorption edge, photoresponse on the photodetectors under consideration is determined by two main mechanisms: absorption on the ensemble of Ge quantum dots and Fowler emission. It is shown by the analysis of the Raman scattering spectra on the optical photons of Ge–Si structures that the quantum efficiency of photodetectors based on them in the first case is due to the degree of nonuniform stress relaxation in the array of Ge quantum dots. The photoresponse directly associated with the Ge quantum dots is manifested on Schottky diodes with a superthin intermediate oxide layer SiO₂, which eliminates the second mechanism. In further development, the proposed photodetector architecture with pseudomorphic Ge quantum dots can be used both for portable thermophotovoltaic converters and fiber-optic data transmission systems at wavelengths corresponding to basic telecommunication standards (λ = 0.85, 1.3 and 1.55, 1.3, and 1.55 μm) on the basis of silicon technologies.