溅射气压和衬底温度对Si1-xGex薄膜结构和光吸收性能的影响

采用射频磁控溅射法沉积了Si1-xGex薄膜,研究了溅射气压、衬底温度对薄膜结构、厚度、表面形貌、表面成分及光吸收性能的影响。结果表明:薄膜均为微晶结构且相组成不随溅射气压和衬底温度的改变而改变;随着溅射气压升高,薄膜结晶性能降低,升高衬底温度使其结晶性能提高;随气压或温度的升高,薄膜厚度均先增大后减小,在1.0Pa或400℃达到最大值;随温度的升高,薄膜表面团簇现象消失并变得平整致密,气压为8.0Pa时,表面有孔洞和沟道;随气压升高,薄膜中锗含量降低,光吸收强度减小,光学带隙增大;衬底温度的变化对光学带隙影响不大。     

反应磁控溅射法制备ZnO/Al(O)/ZnO薄膜的光学和电学性能

采用反应磁控溅射法,通过控制中间层沉积时的氧气流量,在聚对苯二甲酸乙二醇酯基底上制备了ZnO/Al(O)/ZnO薄膜,研究了氧气流量对Al(O)薄膜的微观形貌、表面粗糙度,以及对ZnO/Al(O)/ZnO薄膜光学和电学性能的影响。结果表明:随着氧气流量的增加,铝在ZnO薄膜表面由三维岛状生长转变为二维层片状生长,Al(O)薄膜表面粗糙度先增大后减小再增大,当氧气流量为6.7×10~(-3)cm~3·s~(-1)时最小;随着氧气流量的增加,ZnO/Al(O)/ZnO薄膜在较长波长范围内的透过率增大,方阻增大,霍尔迁移率和载流子浓度下降;综合考虑光学和电学性能,适宜的氧气流量为6.7×10~(-3)cm~3·s~(-1)。     

搀杂二氧化钒薄膜研究进展

掺杂能明显改变二氧化钒(VO2)薄膜的相变温度,提高薄膜的电阻温度系数(T<,CR>).研究表明,W、Mo等大尺寸原子掺杂可以降低相变温度,相反Al、P小尺寸原子掺杂则使相变温度升高.综述掺杂改性的一般方法,各种不同掺杂元素对VO2薄膜相变、电学性能和光学性能的影响,介绍掺杂VO2的最新研究进展,并为扩大其应用领域探讨今后的研究方向.     

应用L-MBE方法制备ZnO薄膜的结构和光学特性

用激光分子束外延(Laser Molecular Beam Epitaxy,L-MBE)设备在p型Si(111)衬底上制备了不同衬底温度和不同氧压的ZnO薄膜,用X射线衍射仪(XRD)和原子力显微镜(AFM)分别对薄膜的结构和形貌进行了分析,用He-Cd激光(325nm)激发的光致发光测试系统对薄膜进行了荧光光谱分析。研究发现,在衬底温度为400℃,氧压1Pa左右所制备的ZnO薄膜表面比较均匀致密,晶粒生长较充分,有较高的结晶质量和发光强度。ZnO薄膜的近带边发射与薄膜的结晶质量和化学配比均有关系。     

热处理对钛掺杂类金刚石薄膜场发射性能的影响

采用多靶磁控溅射技术制备了钛掺杂类金刚石(Ti-DLC)薄膜,并在不同温度(300,350,400℃)下进行了热处理,研究了热处理温度对薄膜微观结构、成分、能带结构以及场发射性能的影响。结果表明:与热处理前的相比,300℃热处理后Ti-DLC薄膜中sp²-C团簇相对含量增大,光学带隙最小,开启场强最低,为5.43 V·μcm^-1,场发射性能最好;当热处理温度高于300℃时,薄膜的DLC含量减少,同时生成大量TiO₂,光学带隙增加,薄膜开启场强增大,场发射性能变差;薄膜的场发射电流基本不受热处理温度的影响。     

用紫外-可见光谱仪研究玻璃基掺氮二氧化钛薄膜的沉积速率和光学带隙

用紫外-可见光谱仪研究了不同溅射功率下磁控溅射法在玻璃基上沉积掺氮二氧化钛膜的沉积速率和光学带隙。结果表明，随着溅射功率的增加，薄膜的沉积速率增加，吸收边波长红移，薄膜的光学带隙宽度减小。热处理温度对不掺氮二氧化钛薄膜的吸收边和光学带隙的影响较小。     

离子束溅射氧化钽薄膜的光学带隙特性

Ta_2O_5薄膜是可见光到近红外波段中重要的高折射率薄膜材料之一。本文针对离子束溅射制备Ta_2O_5薄膜的光学带隙特性开展了实验研究工作,基于Cody-Lorentz模型表征了薄膜的光学带隙特性,重点针对薄膜的禁带宽度和Urbach带尾宽度与制备参数之间的相关性进行研究。研究结果表明:在置信概率95%以上时,对Ta_2O_5薄膜禁带宽度影响的制备参数,权重大小依次为氧气流量、基板温度、离子束电压;而对Ta_2O_5薄膜Urbach带尾宽度影响的制备参数,权重大小依次为基板温度和氧气流量。对于Ta_2O_5薄膜在超低损耗激光薄膜和高损伤阈值激光薄膜领域内应用,本文的研究结果给出了同步提高薄膜的禁带宽度和降低带尾宽度的重要工艺参数选择方法。     

Ag掺杂对TiO2纳米薄膜结构及摩擦学性能的影响

采用溶胶凝胶法在普通载玻片上制备了TiO2和Ag/TiO2纳米结构薄膜,利用X射线衍射仪(XRD)、X光电子能谱(XPS)、原子力显微镜(AFM)及UMT-2摩擦试验机,考察了Ag掺杂量对薄膜组成结构、表面形貌及摩擦学性能的影响。实验结果表明,Ag掺杂量对TiO2薄膜表面形貌和减摩抗磨性能产生重要影响,低掺杂时Ag自润滑性能对薄膜摩擦性能的增强作用占主导,而高掺杂时其对薄膜的影响主要表现为恶化表面,从而导致摩擦性能下降。本研究测试条件下,掺杂量为5.0%(摩尔分数)时具有最佳的耐磨寿命和最低的摩擦因数。     

AuCl3掺杂石墨烯的电磁屏蔽特性研究

石墨烯因具备宽波段高透光性和良好的导电性而有望成为光学窗口的电磁屏蔽材料。采用AuCl3掺杂方式增加少层石墨烯薄膜的载流子浓度,降低表面电阻值。并通过拉曼光谱对掺杂前后石墨烯薄膜进行表征、对比,得到石墨烯薄膜层数、缺陷、掺杂类型及连续性方面的信息。利用各向异性介质的平面波传输线模型,着重考虑化学势对石墨烯电导率的影响,得到宽波段掺杂石墨烯的屏蔽效能曲线。实验采用屏蔽室法对转移在PET表面的石墨烯薄膜进行屏蔽效能测试,结果表明寡层(1~2层)掺杂石墨烯的平均屏蔽效能在6.7dB左右,与计算值符合较好。     

Na+掺杂ZnO薄膜的结构和电学性能

以醋酸锌为溶质、碳酸钠为钠源,采用溶胶-凝胶法在Si〈100〉衬底上制备了钠掺杂ZnO薄膜,掺杂浓度分别为0,0.018,0.036,0.045,0.063和0.09 mol/L.研究了钠掺杂后ZnO晶胞尺寸和表面形貌的变化规律,用霍尔效应仪测试了试样的载流子浓度及导电类型,分析了材料的拉曼光谱与试样内部缺陷浓度的关系.结果表明:Na 离子可进入ZnO晶格取代Zn2 ,导致晶胞变大,同时ZnO薄膜由n-型转变为p-型导电;当Na 掺杂浓度达0.045 mol/L时,其电阻率为75.7Ω·cm,空穴浓度2.955×1017 /cm3.     

Multifractal analysis of Mg-doped ZnO thin films deposited by sol–gel spin coating method

A multifractal analysis has been performed on the 3D (three-dimensional) surface microtexture of magnesium-doped zinc oxide (ZnO:Mg) thin films with doping concentration of 0, 2, 4, and 5%. Thin films were deposited onto the glass substrates via the sol–gel spin coating method. The effect of magnesium doping, on the crystal structure, morphology, and band gap for ZnO:Mg thin films has been analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and UV–Vis spectroscopy. It has been observed that the surface of ZnO thin films is multifractal in nature. However, multifractality and complexity observed to decrease with increasing content of Mg in ZnO thin films due to formation of islands on the surface in accordance with Volmer–Weber growth mechanism. The investigations revealed that crystallinity, microtexture, morphology, and optical properties of the thin films can be tuned by controlling the Mg content within the ZnO lattice. In particular, their optical band gap energies were 3.27, 3.31, 3.34, and 3.33 eV at 0, 2, 4, and 5%, respectively. The prepared thin films of ZnO:Mg with tuned characteristics would have promising applications in optoelectronic devices.     

Influence of Mg doping on the morphology and optical properties of ZnO films for enhanced H2 sensing

Highly oriented ZnO and Mg doped ZnO thin films were fabricated on Al₂O₃ substrate by sputtering at room temperature. The effect of Mg doping on the structural, optical, and morphological properties of ZnO film was investigated. The intensity of (002) peak in X‐ray diffraction measurements revealed the influence of Mg doping on the crystallinity and orientation of ZnO film. Photoluminescence (PL) results show that the Ultraviolet (UV) emission peak was shifted to lower wavelength side for Mg:ZnO film indicating the possibility for quantum confinement. UV–vis–NIR optical absorption revealed an improvement in optical transmittance from 70 to 85%, and corresponding optical band gap from 3.25 to 3.54 eV. Atomic force microscope (AFM) images revealed the nano‐size particulate microstructure of the films. The surface topography of Mg doped ZnO film confirmed decreased grain size with large surface roughness and increased surface area, favorable for sensing. Pure ZnO and Mg doped ZnO film were used as active layer and tested for its sensing performance to hydrogen. Compared to undoped ZnO, 22 at.% Mg doped ZnO film showed much higher sensor response to H₂ at a concentration as low as 200 ppm and at a lower operating temperature of 180°C. A linear sensor response was observed for H₂ concentration in the range of 100–500 ppm. Microsc. Res. Tech. 76:1118–1124, 2013. © 2013 Wiley Periodicals, Inc.     

Surface characteristics and tribology study of metal oxide thin films

Abstract

Microcrystalline high quality undoped ZnO thin films were deposited on Si(100) and Corning 1737F glass substrates by a dc magnetron sputtering system. Surface and mechanical properties of ZnO thin films deposited under different deposition conditions (thickness, deposition rate and plasma composition) were investigated. Atomic force microscopy, nanoindentation techniques and scratch tests have been carried out. The lateral grain radius was between 50 and 160 nm. Surface roughness was found to vary from 1·3 to 10·3. In order to measure the real hardness of ZnO thin films grown on Si(100) and glass Continuous Stiffness Measurement technique was used. The hardness was found to be between 11 and 13 GPa for the polycrystalline ZnO almost five times larger than for the corresponding single crystalline material, while scratch tests verified a film structure, thickness, and surface morphology dependency on the mechanical properties for these metal oxide thin films.     

Study on the c-axis preferred orientation of ZnO film on various metal electrodes

ZnO thin film was deposited on various metal electrodes by reactive sputtering, and c-axis preferred orientation of the film has been studied. ZnO, which has high piezoelectricity, is promising for oscillators or filter devices such as surface acoustic wave (SAW) device, gas sensor, and film bulk acoustic resonator (FBAR). But, for the application of ZnO film for these devices, the film should be grown with c-axis normal to the electrode. In this study, Pt, Al, and Au were deposited on Si wafer, and the surface roughness and crystal structure of the ZnO film on the electrode were investigated using AFM, scanning electron microscopy (SEM), and X-ray diffraction (XRD). Columnar structures of ZnO films were grown with c-axis normal to all electrodes, and among them Pt electrode showed the highest preferred orientation of ZnO film.     

Study on the c-axis preferred orientation of ZnO film on various metal electrodes

ZnO thin film was deposited on various metal electrodes by reactive sputtering, and c-axis preferred orientation of the film has been studied. ZnO, which has high piezoelectricity, is promising for oscillators or filter devices such as surface acoustic wave (SAW) device, gas sensor, and film bulk acoustic resonator (FBAR). But, for the application of ZnO film for these devices, the film should be grown with c-axis normal to the electrode. In this study, Pt, Al, and Au were deposited on Si wafer, and the surface roughness and crystal structure of the ZnO film on the electrode were investigated using AFM, scanning electron microscopy (SEM), and X-ray diffraction (XRD). Columnar structures of ZnO films were grown with c-axis normal to all electrodes, and among them Pt electrode showed the highest preferred orientation of ZnO film.     

氧氩比对ZnO薄膜晶体结构和导电性能的影响

探讨氧氩比对ZnO薄膜晶体结构和导电性能的影响。利用直流反应磁控溅射法在硅衬底上沉积C轴择优取向的ZnO晶体薄膜,在其他反应条件不变的情况下,改变氩氧比,测量了样品的晶体结构和导电性能。随着反应气氛中氩气含量的增加,(002)面衍射峰的强度有所提高,说明薄膜的结晶质量有所改善,衍射峰略向θ角减小的方向移动。随着反应气氛中氩气含量的增多、氧气含量的减少,ZnO薄膜的方块电阻明显减小,说明薄膜的电阻率随反应气氛中氩气的增加而明显减小。     

ZnO薄膜非线性光学特性的实验研究

利用金属有机化学气相沉积(MOCVD)技术在蓝宝石衬底上生长一层高质量的ZnO薄膜。为了考察沉积温度对样品的非线性特性的影响,在200~500 ℃生长了一系列ZnO薄膜。用X射线衍射谱(XRD)及扫描电镜(SEM)对样品结构进行了评价。以Nd:YAG激光器输出的1.06 μm的激光为基频光,对ZnO薄膜样品的二阶及三阶非线性光学特性进行了实验研究。实验发现,对于250 ℃沉积温度的样品有较强的非线性效应,实验测得的二阶非线性极化张量 χ ⁽²⁾_ZZZ=9.2 pm/V, 三阶有效非线性系数χ⁽³⁾=5.28×10^－20 m²/V²。     

The role of substrates on the structural,optical, and morphological properties of zno nanotubes prepared by spray pyrolysis

ZnO films were deposited onto glass, ITO coated glass, and sapphire substrate by spray pyrolysis, and subsequently annealed at the same temperature of 400°C for 3 h. The role of substrate on the properties of ZnO films was investigated. The structural and optical properties of the films were investigated by X‐ray diffractometer (XRD) and photoluminescence (PL) spectrophotometer, respectively. The surface morphology of the nanostructured ZnO film was investigated by scanning electron microscopy (SEM) and atomic force microscopy (AFM). Crystallographic properties revealed that the ZnO films deposited on sapphire and ITO substrates exhibit a strong c‐axis orientation of grains with hexagonal wurtzite structure. Extremely high UV emission intensity was determined in the film on ITO. The different luminescence behaviors was discussed, which would be caused by least value of strain in the film. Films grown on different substrates revealed differences in the morphology. ZnO films on ITO and sapphire substrates revealed better morphology than that of the film on glass. AFM images of the films prepared on ITO show uniform distribution of grains with large surface roughness, suitable for application in dye sensitized solar cells. Microsc. Res. Tech. 77:211–215, 2014. © 2013 Wiley Periodicals, Inc.     

Assessment of adhesion between thin film and silicon based on a scratch test

Thin film coatings are commonly utilized to prevent wear, modify surface properties, and manipulate the frictional behavior of various mechanical systems. The behavior of a coating has a direct effect on the life as well as performance of the system. However, the coating itself is subject to damage, and the quality of the coating is related to the adhesion characteristics between the coating and the substrate. Therefore, a quantitative assessment of the adhesion properties of thin film is important to guarantee the reliability of not only the thin film but also the mechanical system. In this study, ramp loading scratch tests were performed to assess the adhesion characteristics of Ag and ZnO thin films coated on a silicon wafer. Silver thin film, deposited by sputtering, and ZnO thin film, fabricated by a sol-gel method, were used as scratch specimens. Scratch tests using a diamond tip were performed with a continuously increasing normal force. During the scratch test, the normal and frictional forces were monitored to assess the integrity of the film. The Benjamin and Weaver model commonly used for obtaining the horizontal force during the scratching of films coated on a substrate showed large discrepancies with the experimental results. In this work, the model was modified with a plowing term to minimize the difference between the experimental and theoretical results. Using the modified model, the experimental results could be predicted with an accuracy of about 10%.