叶序结构抛光垫表面的抛光液流场分析

为了解决在化学机械抛光过程中抛光接触区域内抛光液的分布均匀性问题,基于生物学的叶序理论,设计葵花籽粒结构的仿生抛光垫,建市化学机械抛光抛光液流场的运动方程和边界条件,利用流体力学软件(Fluent)对抛光液的流动状态进行仿真,并获得叶序参数对抛光液流动状态的影响规律.结果表明:抛光液在基于葵花籽粒的仿生抛光垫的流动是均匀的,抛光液沿着逆时针和顺时针叶列斜线沟槽流动,有利于流体向四周发散.     

无抛光垫化学机械抛光技术研究

应用双电层理论分析了SiO2磨粒与聚苯乙烯粒子在溶液中的ζ电位及粒子间的相互作用机制,观察到SiO2磨粒吸附在聚苯乙烯粒子表面的现象.分析了基于复合粒子抛光液的无抛光垫化学机械抛光技术特点及其材料去除机理.比较试验表明,基于复合粒子抛光液的硅片无抛光垫化学机械抛光具有与传统化学机械抛光相接近的材料去除率和硅片表面粗糙度值,并可避免工件塌边现象的产生.     

考虑抛光垫特性的CMP流动性能

为了研究具有多孔结构抛光垫对化学机械抛光(Chemical mechanical polishing,CMP)性能所起的重要作用, 通过假定孔质层流体服从Darcy规律,即流动速度正比于压力梯度而反比于粘度,从而提出了CMP中考虑抛光垫特性的三维流体模型,并给出了流动方程。利用多重网格技术和线松驰技术求解上述所得的流动方程,用数值模拟方法探求了不同大小抛光垫孔径和不同孔质层厚度下承载能力和运行参数(包括节距高度、转角和倾角等)的关系。计算结果表明,当抛光垫的孔径尺寸较小和其孔质层较厚时有较大的承载能力(包括载荷与转矩),从而将提高CMP的材料去除率。孔隙直径较大的抛光垫由于允许较多的流体流过多孔层而导致其承载能力下降。研究结果有助于了解CMP的作用机理。     

化学机械抛光中抛光垫材料的研究与展望

在化学机械抛光中,抛光垫的材料是重要影响因素之一,它直接影响着抛光效果。本文介绍了化学机械抛光垫的基本材料、材料特性及其对抛光效果的影响,目前化学机械抛光加工中所采用的抛光垫材料及主要用途,对各种抛光垫材料在抛光过程中存在问题进行了分析,同时展望了抛光垫材料的发展趋势。     

CMP过程中抛光垫表面沟槽对液膜厚度影响研究

抛光垫表面沟槽结构是决定抛光液抛光效果的重要因素之一。为了研究抛光垫表面沟槽对化学机械抛光过程的影响,设计并搭建了高速摄影仪在线检测平台,检测并研究了有无沟槽及不同类型沟槽结构对液膜厚度的影响。实验结果表明:抛光垫开槽可以增加抛光液液膜厚度分布均匀性;在同心圆型、放射型、网格型、复合型4种类型抛光垫结构中复合型沟槽具有最优抛光效果。     

CeO_2/SiO_2复合磨粒抛光性能及机制研究

为提高硅片抛光质量与效率,利用均相沉淀法制备CeO2/SiO2复合磨粒,配制绿色环保水基型抛光液对硅片进行化学机械抛光,研究pH值、抛光时间、抛光速度、抛光压力等抛光工艺参数对硅片抛光性能的影响。结果表明:随抛光液pH值增加,材料去除率相应增大;材料去除率在一定时间范围内随抛光时间增加而下降;材料去除量随抛光速度、抛光压力的增加均先增大后减小。推测CeO2/SiO2复合磨粒抛光机制为由于水合作用,在硅片表面形成一层易于磨削的软质层。     

CMP抛光界面温度的理论分析与仿真

介绍了抛光界面的温度对化学机械抛光过程的重要影响。在对温度变化的原因进行分析的基础上,忽略抛光液的流场分布、抛光界面压力分布的均匀性等因素,定性地分析了抛光垫和工件的温度分布情况。并利用红外摄像仪验证了抛光垫表面的温度分布。通过抛光界面的热量流动理论分析,利用ANSYS软件对工件在抛光过程中的温度变化进行仿真计算,得到工件的抛光表面温度随时间的变化曲线,可以根据仿真结果预测工件在不同抛光工艺参数条件下的温度变化情况。     

CeO2/SiO2复合磨粒抛光性能及机理研究

为提高硅片抛光质量与效率,利用均相沉淀法制备ＣｅＯ２／ＳｉＯ２ 复合磨粒,配制绿色环保水基型抛光液对硅片进行化学机械抛光,研究ｐＨ值、抛光时间、抛光速度、抛光压力等抛光工艺参数对硅片抛光性能的影响。结果表明：随抛光液ｐＨ值增加,材料去除率相应增大;材料去除率在一定时间范围内随抛光时间增加而下降;材料去除量随抛光速度、抛光压力的增加均先增大后减小。推测ＣｅＯ２／ＳｉＯ２复合磨粒抛光机制为由于水合作用,在硅片表面形成一层易于磨削的软质层。     

利用复合磨粒抛光液的硅片化学机械抛光

为了提高硅片的抛光速率,利用复合磨粒抛光液对硅片进行化学机械抛光.分析了SiO2磨粒与聚苯乙烯粒子在溶液中的ζ电位及粒子间的相互作用机制,观察到SiO2磨粒吸附在聚苯乙烯及某种氨基树脂粒子表面的现象.通过向单一磨粒抛光液中加入聚合物粒子的方法获得了复合磨粒抛光液.对硅片传统化学机械抛光与利用复合磨粒抛光液的化学机械抛光进行了抛光性能研究,提出了利用复合磨粒抛光液的化学机械抛光技术的材料去除机理,并分析了抛光工艺参数对抛光速率的影响.实验结果显示,利用单一SiO2磨料抛光液对硅片进行抛光的抛光速率为180 nm/min;利用SiO2磨料与聚苯乙烯粒子或某氨基树脂粒子形成的复合磨粒抛光液对硅片进行抛光的抛光速率分别为273 nm/min和324 nm/min.结果表明,利用复合磨粒抛光液对硅片进行抛光提高了抛光速率,并可获得Ra为0.2 nm的光滑表面.     

计算机硬盘基片的亚纳米级抛光技术研究

随着计算机磁头与磁盘间隙的不断减小,硬盘表面要求超光滑(亚纳米级粗糙度)。化学机械抛光技术是迄今几乎唯一的全局平面化技术。研究了抛光液特性与计算机硬盘基片的化学机械抛光性能间的关系,结果表明,抛光后表面的波纹度(Wa)、粗糙度Ra)以及材料去除量强烈依赖于抛光液中磨粒的粒径、磨粒和氧化剂的浓度等因素。借助对抛光后表面的俄歇能谱(AES)分析,对其化学机械抛光机理进行了探讨。     

单晶硅同质互抛实验研究

以材料的去除率和表面粗糙度为评价指标设计对比实验,验证了硬脆材料互抛抛光的可行性,得到了抛光盘转速对硬脆材料互抛的影响趋势和大小。实验结果表明：当抛光压力为48 265 Pa（7 psi）、抛光盘转速为70 r/min时,自配抛光液互抛的材料去除率为672.1 nm/min,表面粗糙度为4.9 nm,与传统化学机械抛光方式的抛光效果相近,验证了硬脆材料同质互抛方式是完全可行的;互抛抛光液中可不添加磨料,这改进了传统抛光液的成分;采用抛光液互抛时,材料去除率随着抛光盘转速的增大呈现先增大后减小的趋势,硅片的表面粗糙度随着抛光盘转速的增大呈先减小后增大的趋势。     

Material removal efficiency improvement by orientation control of CMP pad surface asperities

This paper presents a novel method of improving material removal efficiency in the chemical mechanical polishing (CMP) process by optimizing the surface asperity orientation with respect to polishing motion. Feret's diameter plays a key role in increasing the number of working abrasives. Based on Feret's diameter model, an optimization method is proposed for the conditioning motion of a diamond dresser against a CMP pad. The radial velocity component of the dresser on the CMP pad is maximized by considering its direction of motion based on kinematic motion simulation. In addition, the pad cut rate profile is optimized to be uniform. Analytical and experimental investigations show that the ratio of radial and tangential velocity components is improved, yielding a larger Feret's diameter and 15% increase in the material removal rate.     

Modeling the effects of abrasive size, surface oxidizer concentration and binding energy on chemical mechanical polishing at molecular scale

No conclusive results have been proposed for the influence of the abrasive particle size on the material removal during the chemical mechanical polishing (CMP). In this paper, a mathematical model as a function of abrasive size and surface oxidizer concentration is presented for CMP. The model is proposed on the basis of the molecular-scale removal theory, probability statistics and micro contact mechanics. The influence in relation to the binding energy of the reacted molecules to the substrate is incorporated into the analysis so as to clarify the disputes on the variable experimental trends on particle size. The predicted results show that the removal rate increases sub-linearly with the abrasive particle size and oxidizer concentration. The model predictions are presented in graphical form and show good agreement with the published experimental data. Furthermore, variations of material removal rate with pressure, pad/wafer relative velocity, and wafer surface hardness, as well as pad characteristics are addressed. Results and analysis may lead further understanding of the microscopic material removal mechanism from molecular-scale perspective.     

乙醇浓度对亲水性固结磨料垫自修整特性的影响

自修整能力是评价亲水性固结磨料研磨垫加工性能的重要指标。本文选择不同浓度的乙醇水溶液作为研磨介质,表征了亲水性固结磨料垫基体在研磨介质中的溶胀率与砂浆磨损速率,探索了亲水性固结磨料垫在不同研磨介质条件下研磨石英玻璃的加工性能,采用亲水性固结磨料垫在不同阶段的材料去除速率变化(Material Removal Rate Variation,MRRV)衡量固结磨料垫的自修整能力。结果表明:随着研磨介质中乙醇浓度的增加,溶胀率与砂浆磨损速率均增大,分别达到了1.05%与5.5mg/h,不仅研磨垫的材料去除率与表面质量得到了提高,同时,不同阶段的MRRV大幅减小,体现了更优的自修整能力。当乙醇浓度为25%时,平均材料去除率达到11.82μm/min,表面粗糙度Ra为75nm,磨料垫具备了良好的加工性能。研磨介质中引入乙醇能有效提高固结磨料垫的加工性能。     

Effects of particle size, polishing pad and contact pressure in free abrasive polishing

The objective of this research is to better understand the mechanisms of material removal in the free abrasive polishing process. Experiments were carried out to understand the effects of particle size, polishing pad and nominal contact pressure on the wear rate and surface roughness of the polished surface. A theoretical model was developed to predict the relationship between the polishing parameters and the wear rate for the case of hard abrasive particles sandwiched between a soft pad and a workpiece (softer than the abrasive particles). Experimental results and theoretical predictions indicate that the wear rate increases with an increase in particle size, hardness of polishing pad and nominal contact pressure, and with a decrease in elastic modulus of the polishing pad. Surface roughness increases with an increase in particle size and hardness of polishing pad, and nominal contact pressure has little effect on the roughness. A dimensionless parameter, wear index which combines all of the preceding parameters, was introduced to give a semi-quantitative prediction for the wear rate in free abrasive polishing. It is also suggested that when polishing hard material, in order to achieve a high materials removal rate and a smooth surface, it is preferable to use diamond as the polishing particles because of their high deformation resistance.     

A model to simulate surface roughness in the pad dressing process

Pad dressing, which is one of the most important planarization processes, is widely used in CMP. The estimation of surface roughness under various machining parameters (such as dressing force, diamond density of the dresser, rotational speed of the dresser, different machining paths, etc.) is essential to the pad dressing process. In this study, elastic-plastic theory and the wear model are used to construct the expression for the magnitude of material removal as a function of the indentation depth. The deformation of the pad is obtained by using elastic-plastic theory, and the material removal caused by individual micro-contacts is calculated with the help of wear theory. Finally, the macroscopic wear volume is found by summing the volumetric wear of each individual micro-contact. A parametric study is conducted to explore the influence on the surface roughness results and the pad dressing interfacial phenomena of operational parameters. The results reveal that a rapid initial improvement followed by a leveling off, manifesting a saturation effect. Moreover, the model shows that a higher dressing force with a dresser speed close to the pad speed and a moderate translation speed increase the material removal rate corresponding with a lower surface roughness dressing.     

A mixed elastohydrodynamic lubrication model with layered elastic theory for simulation of chemical mechanical polishing

Mixed elastohydrodynamic lubrication (mixed EHL) model has been successfully used to study phenomena in chemical mechanical polishing (CMP) process. However, in various mixed EHL simulation frameworks, a polishing pad's deformation cannot correctly be described by adopted models for pad deformation such as elastic half-space model and Winkler elastic foundation model. Thus, a more accurate model for pad deformation is needed, since this is the prerequisite for an accurate prediction of contact pressure and material removal rate, which is critical for improvement of polishing quality. In this paper, a layered elastic theory, which is frequently used to calculate flexible pavement response to truck loading, is introduced into the mixed EHL model. It is found that this theory has a similar accuracy to the traditional 3D finite element method for calculating the pad deformation. However, its computational cost is much lower, which is especially important for accurate and efficient simulation of mechanical behavior and material removal rate (MRR) in CMP. In order to highlight benefits of the proposed theory, simulations are carried out based on three different pad deformation models with the mixed EHL model. The pad deformation behavior is found to have a significant influence on the final simulation results, especially the MRR prediction. By comparing the different simulation models, the proposed layer elastic theory is found to be an optimal model for describing the polishing pad deformation behavior in CMP and can provide accurate simulation results on contact pressure distribution and the material removal rate.     

Effects of wafer curvature caused by film stress on the chemical mechanical polishing process

A theoretical model based on two-body contact theory is established to simulate the contact pressure distribution arising from wafer curvature which is caused by film stress during CMP process. Both wafer and pad deformations during the contact process are considered. The profiles of the contact pressure distribution for wafers with different curvature radius are simulated. The influences of wafer curvature on mean removal rate and within wafer removal rate nonuniformity (WIWNU) are simulated and compared with the experimental data. According to the two-body contact model, when the pad is in contact completely with the wafer, the profile of the contact pressure has almost the same trend whether the wafer has an upward or a downward curvature. The mean value of the contact pressure will increase with increasing of radius of downward curvature. WIWNU will decrease with increasing pre-polish wafer bow from concave (upward curvature) to convex (downward curvature). The results from the simulation correlated with the experimental data and demonstrated the validity of the model. The results are helpful for controlling and reducing the wafer to wafer removal rate nonuniformity and within wafer removal rate nonuniformity in CMP.     

An analytical model of the material removal rate between elastic and elastic-plastic deformation for a polishing process

This paper develops an analytical model for the material removal rate during specimen polishing. The model is based on the micro-contact elastic mechanics, micro-contact elastic-plastic mechanics and abrasive wear theory. The micro-contact elastic mechanics between the pad-specimen surfaces used the Greenwood and Williamson elastic model. The micro-contact elastic-plastic mechanics between specimen and particle, as well as the micro-contact elastic mechanics between particle and pad, are also analyzed. The cross-sectional area of the worn groove in the specimen is considered as trapezoidal area. A close-form solution of material removal rate from the specimen surface is the function of average diameter of slurry particles, pressure, the specimen/pad sliding velocity, Equivalent Young’s modulus, RMS roughness of the pad, and volume concentration of the slurry particle.     

多叶动压气体滑动轴承静态特性的有限差分算法

多叶动压气体滑动轴承因其结构简单、摩擦阻力低、旋转精度高和无环境污染等优点,在高速离心分离机、空气压缩机和透平膨胀机等旋转机械中应用广泛。为探究多叶动压气体滑动轴承的静态性能,通过数学变换将三叶动压轴承的气体润滑Reynolds方程转化为标准偏微分方程形式,利用有限差分法和超松弛迭代法进行数值求解,研究气膜厚度和气膜压力分布、承载力、摩擦因数和质量流量等静态性能,随偏心率、预负荷系数、轴承数、长径比及瓦块分布位置的变化规律。结果表明：三叶轴承的承载力和轴颈表面摩擦因数随偏心率和长径比的增加而增加,而偏位角和质量流量随偏心率和预负荷系数的增加则呈现出相反的变化趋势;随着轴承数和预负荷系数的增大,承载力和摩擦因数显著提高,偏位角和质量流量则逐渐减小;瓦块分布位置对三叶动压气体滑动轴承的静态性能影响显著,其中瓦上承载方式的承载力、偏位角和质量流量明显高于瓦间承载方式。