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1.
本工作利用一台不作任何较大改动的CAMECA-IMS-3f扇形磁铁型二次离子质谱仪对传统的离子散射谱(ISS)分析技术进行了适当的变通,并对二次离子质谱分析(SIMS)的深度剖析谱进行了浓度定标。在保留SIMS分析高灵敏度、高深度分辨率的前提下,实现了对块体样品中的掺杂元素的SIMS定量深度剖析。通过与离子注入机标称的注入剂量及卢瑟福背散射的定量分析结果相比较,本方法的定量准确度一般好于10%。而  相似文献   

2.
二次离子质谱学(SIMS)以其很高的灵敏度、很宽的动态范围和优良的深度分辨已逐步发展成为一种重要而有特色的表面分析手段。本文结合第9届国际二次离子质谱学会议(SIMS-IX)对SIMS的最新进展作一个简要评述,范围包括SIMS的各个方面:基础研究、仪器发展、定量分析、应用以及后电离技术等。  相似文献   

3.
ESQUIRE-LC离子阱LC/MS^n是将惠普(HP)与布鲁克(bruker)的尖端技术相结合的高效液相色谱/质谱(LC/MS^n)系统。惠普公司成功的1100系列HPLC和先进的电喷雾电离/大气压化学电离(ESI/APCI)离子源与布鲁克公司最新的多极离子阱MS和MS^n分析器完美结合在一起。ESQUIRE-LC是一种先进的自动化程度最高的液质联用仪。本文是对该仪器的性能特点、技术指标及应用的  相似文献   

4.
本法用离子色谱法对地面水和雨水中的F一、CI--、NOi、SOl进行了分析测定,实验结果表明:方法的检测限分别为FO.olmp/L、CI--0.02mg/L、NOi—NO.002mg/L、SOj-0.02mp/L,F一、CI--、NO;、SOj的变异系数分别为1.33—3.95%、0.94—1.84%、1.13—3.71%、0.97一2.04%,F一、CI一、NOi、SO:一的加标回收率分别为97.4%、103.6%、95.0%、97.l%,该法具有灵敏度高、准确度高、稳定性好、检测限低、样品预处理简单、操作简单、迅速、多种阴离子同时测定等优点,能满足测定地面水和雨水中的F一、CI--、NO3--、SOj的要求.  相似文献   

5.
介绍了通过MIA-3微机化多功能离子分析器实现光度法仪器与PC机联机的硬件结构,应用软件与测试结果,讨论了标准曲线的二次曲线最小二乘法拟合,样品分析结果求解及判别方法,分析结果存盘,利用FOXBASE程序打印分析结果汇总报告。  相似文献   

6.
采用反相、短柱LC-APcI/MS和MS/MS及产物离子谱的谱库检索通过检测低于规定量级的目标农药分析地表水,用分析时间30分钟快速地筛分和表征地表水中有机污染物。  相似文献   

7.
离子色谱法测定高效聚合氯化铝中的硫酸根   总被引:1,自引:0,他引:1  
研究了用离子色谱法测定高效聚合氯化铝中SO^2-4的方法,用离子交换法去除Al^3+等金属离子,利用HCL和H2SO4的沸点差去除Cl^-,然后用离子色谱法测定PACS中的SL^2-4,样品测定结果令人满意。  相似文献   

8.
本文讨论了近来有关离子淌度谱(IMS)在分析化学中应用方面的文献。其内容包括仪器处理部分、滤谱采集技术、气体中的离子淌度理论以及大气压离子化动力学,同时,对放射性电离、光致电离、激光电离、表面电离和电喷雾电离的内容也进行了讨论。IMS在分析上的应用可分面两个方面,即作为独立的谱仪和作为气相、液相及超临界流体色谱仪的检测器这两方面的应用。  相似文献   

9.
CIM开放系统体系结构(CIM-OSA)的目标是为企业提供一组开放的参考模型。根据参考模型,结合特定企业的实际情况,就可得到满足特定企业要求的专用模型。本文在分析CIM-OSA研究内容及建模过程的基础上,建立了机械制造类企业生产计划与管理领域的CIM-OSA部分通用参考模型。  相似文献   

10.
可持续发展CIMS(S-CIMS)的体系结构及其实施策略研究   总被引:1,自引:0,他引:1  
在分析可持续发展和CIMS的战略意义的基础上,提出了可持续发展CIMS(S-CIMS)的概念,并结合S-CIMS的特点和体系结构对S-CIMS的信息流进行了详细分析,最后还根据我国的具体情况阐明了在我国实施S-CIMS的策略。  相似文献   

11.
Marshall MM  Yang J  Hall AR 《Scanning》2012,34(2):101-106
Helium ion milling of suspended silicon nitride thin films is explored. Milled squares patterned by scanning helium ion microscope are subsequently investigated by atomic force microscopy and the relation between ion dose and milling depth is measured for both the direct (side of ion incidence) and transmission (side opposite to ion incidence) regimes. We find that direct-milling depth varies linearly with beam dose while transmission-milling depth varies with the square of the beam dose, resulting in a straightforward method of controlling local film thickness.  相似文献   

12.
孙立民 《质谱学报》2014,35(5):385-396
随着仪器性能的不断提高,飞行时间二次离子质谱(TOF-SIMS)在材料表面化学分析中起着越来越重要的作用。TOF-SIMS的主要测试功能包括表面质谱、化学成像及深度剖析,本工作对TOF-SIMS的化学成像及深度剖析2种功能在生物材料和生命科学中的应用做了简单综述,重点介绍了TOF-SIMS成像技术在生物芯片制备工艺中的应用和TOF-SIMS成像和深度剖析技术对生物分子在细胞和生物体组织上空间分布的表征方法;另外,对生物样品的低温制备方法,样品表面添加基质以增强信号强度的实验手段,使用团簇一次离子源提高分子二次离子产额和利用对样品损伤小的C60离子源为轰击源做深度剖析等实验做了简单的介绍;最后,对TOF-SIMS在生物生命材料领域的应用做了展望。  相似文献   

13.
Medium-energy (some tens of keV) ion irradiation is frequently used in various technologies. It is well known that during this irradiation serious alterations are introduced to the material, changing its structure, composition, etc. While there are studies on the amorphization, no results have been reported on the medium-energy ion beam-induced mixing, however. In this work, we present Auger electron spectroscopy (AES) depth profiling measurements of Si/Cr multilayer samples, which were irradiated by various ions (Ga+, Ar+, CF4+) of 20 keV applying angles of incidence of 5 degrees (Ga+), 65 degrees (Ga+) and 75 degrees (Ar+, CF4+). The ion beam-induced mixing at the Si/Cr interface (the broadening of the interface) was measured as a function of the removed layer thickness. The weakest and strongest ion mixing (for a given removed layer thickness) were found for CF4+ and Ga+ 5 degrees irradiations, respectively. In the case of Ga+ irradiation, the larger the angle of incidence the weaker the ion mixing. The extent of mixing does not correlate with the corresponding projected range. Comparison of the experimentally measured ion mixed profiles with those given by dynamic TRIM simulations gave poor agreement for Ar+ and fails for Ga+ irradiations, respectively.  相似文献   

14.
In this paper, a sensitive element of ion beam etching depth is studied and a formula is obtained. Experimental results show that the relative error of etching depth is smaller than 0.98%. This has a practical significance to ion beam micro-fabrication.  相似文献   

15.
In this paper the stage-discharge relationship of a flume with a central baffle is theoretically deduced using the Buckingham-Theorem of the dimensional analysis and the self-similarity theory. The new stage-discharge equation is calibrated by the measurements carried out by Peruginelli and Bonacci using a baffle having a given throat length and five different values of the contraction ratio. Finally, for a given throat length, a relationship linking the discharge with the upstream water depth, the contraction ratio and the contracted width is deduced.  相似文献   

16.
大尺寸衍射光学元件的扫描离子束刻蚀   总被引:1,自引:1,他引:0  
总结了大尺寸衍射光学元件离子束刻蚀技术的研究进展。针对自行研制的KZ-400离子束刻蚀装置,提出了组合石墨束阑结构和多位置分步刻蚀策略来提高离子束刻蚀深度的均匀性,目前在450mm尺寸内的刻蚀深度均匀性最高可达±1%。建立了针对多层介质膜光栅的衍射强度一维空间分布在线检测系统以及用于透射衍射光学元件离子束刻蚀深度的等厚干涉在线检测系统,实现了对大尺寸衍射光学元件离子束刻蚀终点的定量、科学控制,提高了元件离子束刻蚀工艺的成功率。利用上述技术,成功研制出一系列尺寸的多层介质膜光栅、光束采样光栅、色分离光栅以及同步辐射光栅等多种衍射光学元件。  相似文献   

17.
气相色谱-质谱离子源内气体密度的数值分析   总被引:1,自引:0,他引:1  
高艳艳  赵学玒  黄超  汪曣 《质谱学报》2010,31(4):202-207
利用计算流体力学法,对气相色谱-质谱联用仪电子轰击离子源内的气体分布进行数值分析,计算进样毛细管插入离子源不同深度,以及毛细管不同孔径时离子源内气体的分布状态,并讨论毛细管插入深度以及毛细管孔径对离子源内气体分子密度分布的影响。结果表明,毛细管插入离子源特定深度时,离子源离子化区域密度最大。不同孔径的毛细管对离子源密度影响不大。本工作以气体场理论为基础,分析离子源内气体分布状况,为研究气体密度分布对离子源电离效率的影响提供分析方法。  相似文献   

18.
A quadrupole-based secondary ion mass spectrometer designed for depth profiling is described which combines ultrahigh vacuum construction with high sputtering rate, detection sensitivity, depth resolution, mass spectral purity, and abundance sensitivity. Impurities such as B and Al implanted in Si can be profiled to levels below one part per million atomic (ppma), at a depth resolution equal to that obtained by commercial ion microprobes. The primary beam consists of 5-keV, mass-analyzed (40)Ar(+) ions, focused to about 70 microm in diameter. Its high current density (>25mA/cm(2)) permits adequate beam rastering and electronic signal-gating to optimize depth resolution. A secondary ion extraction lens and spherical energy filter are responsible for achieving abundance sensitivities of five to six orders of magnitude on the low mass side of a matrix peak. The ultrahigh vacuum environment of the sample dramatically reduces molecular peaks containing H, C, and O, allowing even hydrogen to be profiled to concentrations below 10 ppma. Because large amounts of data are generated by multi-element depth profiling, means for automated instrument control and data acquisition have been developed.  相似文献   

19.
E. Zinner 《Scanning》1980,3(2):57-78
The principles and applications of depth profiling by secondary ion mass spectrometry (SIMS) are reviewed. Discussed are the basic physical processes and instrumental factors which influence the shape of depth profiles and which have to be understood or controlled for successful experimental measurements. Microroughness caused by sputtering, atomic mixing by primary beam knock-on, and sample consumption limit the depth resolution which can be achieved while the chemical effect of ion yield enhancement by reactive species, matrix effects, and preferential sputtering can strongly affect the secondary ion signal. Instrumental effects to be controlled include beam uniformity, sample charging, and beam, and residual gas contamination. High depth resolution and sensitivity are the reasons for a wide variety of applications for SIMS depth profiling. Reviewed are measurements of the range distribution of ions implanted into semiconductors and their redistribution by subsequent annealing, studies of thin films and of oxide layers, diffusion measurements in metals, semiconductors, and minerals, measurements of elemental surface enhancements in airborne particles, and lunar glass spherules, and the search for solar wind implanted ions in lunar crystals.  相似文献   

20.
瞿欣  王家楫 《质谱学报》2005,26(Z1):13-14
Secondary ion mass spectrometry (SIMS) is a standard technique for characterization of dopant distribution in semiconductor industry. In the ultra-shallow junction (USJ) application, the interested depth scale was extended into the surface transient area of SIMS. There is several improved approach reviewed in this paper that can meet the requirements for the USJ characterization. Sputtering with a low energy primary ion beam incident at a large angle respect to the simple surface normal can effectively minimize the depth of the surface transient area, as well as the length of the profile tail. Oxygen leak can reduce the transient ion yield change, but induces lower depth resolution. Quadrupole SIMS can be used in B profile. As and P profiles, however, need magnetic analyzer with higher mass resolution.  相似文献   

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