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1.
谭刚 《中国机械工程》2005,16(Z1):341-343
通过自制纳米CeO2超细粉体,并配制成抛光液对硅片进行化学机械抛光,研究了纳米CeO2抛光料对硅片的抛光效果,解释了纳米级抛光料的化学机械抛光原理.实验结果表明:由于纳米抛光料粒径小,切削深度小,故材料去除采用塑性流动方式.使用纳米CeO2抛光料最终在1μm的范围内达到了微观表面粗糙度Ra为0.124nm的超光滑表面,满足了产品的要求.  相似文献   

2.
化学机械抛光应用 化学机械抛光技术是目前最好的实现全局平面化的工艺技术,加工表面具有纳米级型面精度和亚纳米级表面粗糙度,同时表面和亚表面无损伤,已接近表面加工的极限。广泛应用在集成电路、计算机磁头,硬磁盘等超精密表面加工,如化学机械抛光应用在半导体工业中的层间介电介质,镶嵌金属W、Al、Cu、Au,多晶硅,导体,绝缘体,硅氧化物等的平坦化工。  相似文献   

3.
虽然化学机械抛光(CMP)技术在半导体产业中得到越来越广泛的应用,但人们对化学机械抛光加工的理解还多半停留在经验阶段,为深入研究其加工机理,引入了激光诱导荧光(LIF)检测技术,在化学机械抛光(CMP)过程中使用LIF技术对晶片下抛光液的流动、混合、抛光液膜的厚度、温度、pH值进行可视化研究,从而来揭示CMP的加工机理.  相似文献   

4.
抛光垫特性对抛光中流体运动的影响分析   总被引:1,自引:0,他引:1  
张朝辉  叶巍 《润滑与密封》2007,32(11):59-61,64
抛光垫表面特性能可大大改变抛光液的流动情况,从而影响化学机械抛光的抛光性能。考虑抛光垫粗糙度和孔隙等对抛光液流动的影响,提出了一个初步的晶片级流动模型,并用数值模拟方法研究了不同参数条件(载荷和速度的变化等)下抛光液的流动特征。计算结果表明增加外载荷将导致粗糙峰的磨损概率增加,增加剪切速率则提高了剪切应力,均可导致高材料去除率。模型能较好理解材料去除机制和输运,从而有助于对化学机械抛光机制的了解。  相似文献   

5.
正在精密与超精密加工领域,清华大学路新春等建立了大尺寸表面纳米级平坦化的加工原理与方法,发明了系列大尺寸超薄硅片纳米级无损伤抛光关键技术,研制开发出12英寸"干进干出"化学机械抛光(CMP)装备与成套工艺,实现了IC制造大尺寸晶圆表面的纳米级平坦化及纳米级缺陷控制。整体技术达到国际先进水平,已在中芯国际等企业实现批量应用,打破了国外高端微电子超精密抛光装备长期垄断的局面。  相似文献   

6.
计算机硬盘基片的亚纳米级抛光技术研究   总被引:16,自引:3,他引:13  
随着计算机磁头与磁盘间隙的不断减小,硬盘表面要求超光滑(亚纳米级粗糙度)。化学机械抛光技术是迄今几乎唯一的全局平面化技术。研究了抛光液特性与计算机硬盘基片的化学机械抛光性能间的关系,结果表明,抛光后表面的波纹度(Wa)、粗糙度Ra)以及材料去除量强烈依赖于抛光液中磨粒的粒径、磨粒和氧化剂的浓度等因素。借助对抛光后表面的俄歇能谱(AES)分析,对其化学机械抛光机理进行了探讨。  相似文献   

7.
硬脆材料的化学机械抛光机理研究   总被引:1,自引:0,他引:1  
化学机械抛光(Chemical Mechanical Polishing,简称CMP)技术是目前唯一可提供全局平面化的超精密表面加工技术,加工后无表面和亚表面损伤。该技术广泛应用于光学元件、微机电系统、集成电路芯片等表面的处理,可达到纳米级的表面粗糙度和微米级的面形精度。目前的研究主要集中在化学机械抛光工艺上,抛光机理尚未形成统一的学说。针对硬脆材料(Si、SiC)的CMP技术进行综述,介绍了CMP技术的发展现状,并对加工过程中存在的材料去除机理做了可能性解释,最后对CMP技术的发展和研究重点做了预测和建议。  相似文献   

8.
利用自制抛光液对微晶玻璃进行化学机械抛光,研究络合剂、氧化剂、润滑剂种类及添加量对微晶玻璃化学机械抛光材料去除速率和表面粗糙度的影响。结果表明:抛光液中加入质量分数0.2%的EDTA络合剂后,能大幅降低材料表面粗糙度;加入质量分数2%的过硫酸铵氧化剂后能得到较光滑的材料表面和较高的材料去除速率;加入质量分数为0.2%的丙三醇润滑剂后能降低材料表面粗糙度。将EDTA络合剂、过硫酸铵氧化剂丙、三醇润滑剂加入SiO_2抛光液中对微晶玻璃进行化学机械抛光,利用原子力显微镜观察抛光微晶玻璃抛光前后的表面形貌。结果表明,抛光后微晶玻璃表面极为平整,达到了0.12 nm的纳米级光滑表面,且材料去除速率达到72.8 nm/min。  相似文献   

9.
叶序结构抛光垫表面的抛光液流场分析   总被引:1,自引:0,他引:1  
为了解决在化学机械抛光过程中抛光接触区域内抛光液的分布均匀性问题,基于生物学的叶序理论,设计葵花籽粒结构的仿生抛光垫,建市化学机械抛光抛光液流场的运动方程和边界条件,利用流体力学软件(Fluent)对抛光液的流动状态进行仿真,并获得叶序参数对抛光液流动状态的影响规律.结果表明:抛光液在基于葵花籽粒的仿生抛光垫的流动是均匀的,抛光液沿着逆时针和顺时针叶列斜线沟槽流动,有利于流体向四周发散.  相似文献   

10.
业界动态     
香港城市大学国际首家“超金刚石及先进膜研究中心”检测发现:深圳市雷地科技实业有限公司在常温下生产的金刚石膜是国际上首次发现的纳米级金刚石材料,这是我国新材料领域的重大突破,这一成果将使金刚石膜材料的应用前景更加广阔。纳米级金刚石晶体膜除具有金刚石的高硬度、化学惰性等优良性能外,还具有自然清洁、自然灭菌、耐磨损、冷阴极场发射及阻隔热辐射等纳米材料性能,应用这一新材料将成功推出最新的高科技产品——场  相似文献   

11.
化学机械抛光(ChemicalMechanical Polishing,CMP)工艺已运用于微机电系统(Micro-Electro-Mechanical System,MEMS)中,并逐渐成为研制高品质微纳器件不可或缺的一道关键技术。区域压力调整、抛光终点检测等技术已经引入到CMP工艺,确保片内不均匀性(Within-wafer Nonuniformity,WIWNU)小于5%,同时有效减小"蝶形"和"腐蚀"等抛光缺陷。CMP在MEMS领域中的运用工艺过程更为复杂,抛光对象更为多元,表面质量要求更高。结合硅、介质层、石英、锗、铂和聚合物等自行开发的CMP工艺以及抛光后清洗处理,详细讨论和阐述CMP工艺如何运用于MEMS领域。实验结果表明,采用CMP工艺,结合抛光液改进和兆声清洗,不仅可以实现薄膜的全局平坦化,而且可以获得高品质的超薄基底、无损的硬质应变薄膜和用于低温直接键合的表面粗糙度小于0.5nm键合表面。CMP技术是研制高品质的可应用于MEMS器件的基底和薄膜的有效手段。  相似文献   

12.
Chemical Mechanical Polishing (CMP) refers to a material removal process done by rubbing a work piece against a polishing pad under load in the presence of chemically active abrasive containing slurry. The CMP process is a combination of chemical dissolution and mechanical action. The mechanical action of CMP involves hydrodynamic lubrication. The liquid slurry is trapped between the work piece (wafer) and pad (tooling) forming a lubricating film. For the first step to understand the mechanism of the CMP process, hydrodynamic analysis is done with a semiconductor wafer. Slurry pressure distribution, resultant forces and moments acting on the wafer are calculated in typical conditions of the wafer polishing, and then nominal clearance of the slurry film, roll and pitch angles at the steady state are obtained.  相似文献   

13.
In this paper, a two-dimensional axisymmetric quasic-static model for the chemical-mechanical polishing process (CMP) was established. Based on the principle of minimum total potential energy, a finite element model for CMP was thus established. In this model, the four-layer structures including the wafer carrier, the carrier film, the wafer and the pad are involved. The von Mises stress distributions on the wafer surface were analysed, and the effects of characteristics of the pad and the carrier film and the load of the carrier on the von Mises stress and nonuniformity on the wafer surface were investigated. The findings indicate that the profile of the von Mises stress distributions correlates with the removal rate profile. The elastic modulus and thickness of pad and carrier load would significantly affect the von Mises stress and nonuniformity, but those of the film did not affect very much.  相似文献   

14.
One of the fundamental mechanisms of chemical-Mechanical polishing (CMP) is the mechanical interaction between the wafer and polishing pad. This interaction was simulated in experiments. The vertical displacement of the wafer with respect to the polishing pad, the fictional drag of the wafer against the pad, and the pressure of the slurry trapped between the wafer and pad were measured. These experiments were performed over a range of commercially common CMP conditions. In addition, polishing rates were measured for CMP performed under induced hydrodynamic conditions where the wafer was separated from the pad by a film of slurry.

It was found that no appreciable polishing occurred under hydrodynamic CMP conditions. Under commercial CMP conditions, it was found that the wafer contacts the polishing pad asperities as evidenced by near-zero wafer displacement and high friction coefficients (?0.4). It was also found that pad conditioning (intentional roughening) causes a suction force to develop between the wafer and pad. This suction force draws the wafer into further contact with the pad, by as much as 20 μm, and corresponds to peak slurry vacuum pressures of 12 kPa (1.7 psi).  相似文献   

15.
XPS study of CMP mechanisms of NiP coating for hard disk drive substrates   总被引:1,自引:0,他引:1  
Chemical mechanical polishing (CMP) mechanisms of NiP coating plated on Al-Mg alloy substrates have been investigated with an X-ray photoelectron spectroscope (XPS). The XPS results indicate that after cleaning, the disk surface contains a thin layer of Ni(OH)2 and P2O3, followed by a thin NiO and P2O3 layer. It is also deduced that during polishing, the disk surface has an oxidization layer with Ni2+ and P3+ species. The experimental investigations reveal that the CMP mechanisms involve a simultaneous process of surface chemical passivation and nano-particle wear.  相似文献   

16.
The planarization CMP, which is considered as one of the most important ULSI chip, is introduced to make flat surface in patterned areas for multilevel MEMS devices. However, the conventional CMP is limited in its application to MEMS structures, due to their wide patterns of μm to mm order thick film layer of several μm. A new CMP process has been developed for application to MEMS structures by the control of selectivity between polysilicon and silicon oxide. A 30nm thick protective oxide layer is deposited to protect the recessed areas, and then polished with low selectivity slurry to partially remove the protruded area while suppressing the removal rate of the recessed area. During the second step of the new CMP process, high selectivity slurry is used to minimize the dishing amount and the variation in the step height according to pattern size and density. Experimental results showed that dishing amount was less than 30nm at the largest pattern of 1250 μm in width and showed no variation of entire pattern, which meant local and global planarization. This result suggests that the newly developed selectivity controlled CMP process can be successfully applied for fabrication the multilevel MEMS devices.  相似文献   

17.
Chemical mechanical polishing (CMP) is a semiconductor fabrication process. In this process, wafer surfaces are smoothed and planarized using a hybrid removal mechanism, which consists of a chemical reaction and mechanical removal. In this study, the effects of wafer size on the material removal rate (MRR) and its uniformity in the CMP process were investigated using experiments and a mathematical model proposed in our previous research; this model was used to understand the MRR and its uniformity with respect to wafer size. Under constant process conditions, the MRR of a silicon dioxide (SiO2) film increased slightly along with an increase in wafer size. The increase in MRR may be attributed to the acceleration of the chemical reaction due to a rise in process temperature. Based on the results obtained, the k and α values in the mathematical model are useful parameters for understanding the effect of wafer size on the MRR and its distribution under a uniform, relative velocity. These parameters can facilitate the prediction of CMP results and the effective design of a CMP machine.  相似文献   

18.
采用随机中点位移法通过计算机模拟抛光垫和晶片的基于分形的粗糙表面,构造了一种新的膜厚方程.在新膜厚方程的基础上分析了一般润滑方程及带离心项的润滑方程对化学机械抛光(CMP)过程中抛光液的压力分布以及无量纲载荷和转矩的影响.结果表明,考虑抛光垫和晶片表面的粗糙程度的影响时,抛光液的压力分布有一定的波动,且压力最大值有所增大,压力最小值有所减小;此外无量纲载荷和转矩的数值也变小.  相似文献   

19.
李刚  孙连春 《光学仪器》2004,26(2):60-63
光学薄膜在倾斜入射时可等效为一线偏振器和一位相延迟器,这一特性可以用琼斯算法进行描述。利用薄膜的这一特性可以消除光学系统中不想要的偏振效应以保持光的偏振状态,也可以用来制作薄膜位相延迟片。首先介绍了薄膜偏振特性分析的琼斯矩阵理论,并结合90°束旋转环行非稳腔中倒向波的抑制,对薄膜位相延迟器的应用进行了举例说明,最后利用TFCalc3.5薄膜设计软件优化设计出了45°入射时,在1315nm处具有90°位相延迟的全介质薄膜位相延迟器。  相似文献   

20.
从微观能量角度分析了超磁致伸缩薄膜的磁致伸缩机理,建立了超磁致伸缩薄膜的非线性强磁—机械耦合模型。设计了简支梁式超磁致伸缩薄膜的驱动磁场并对其进行实验研究。通过Ansys有限元分析软件对简支梁式超磁致伸缩薄膜驱动模型进行了模拟分析,最终得到的薄膜的内部磁场分布结构及固有频率。结果表明,采用椭圆积分法得到薄膜内部磁场分布的数学模拟计算结果与有限元仿真结果基本一致。  相似文献   

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