Decoder side information generation techniques in Wyner-Ziv video coding: a review

Multimedia Tools and Applications - In Wyner-Ziv (WZ) video coding, decoder side information (SI) takes a key role in a WZ video codec among other building blocks. In this paper, we review the...     

试油井选层压裂新工艺及现场试验

设计新型可洗井封隔器，保障油井有反洗井通道，有效防止封隔器以上砂埋所引发的管柱砂卡事故，并对新型封隔器、控制开关、密封接头、同心大通径压力计托筒等井下工具组合优化。解决了多层油井任意选层压裂、求产、测井温一体化的难题。     

UC3875在超声电源功率控制系统中的应用

根据超声波发生器的功率控制系统原理 ,阐述了移相控制策略对超声波发生器输出电压波形的影响 ,介绍了移相控制专用芯片UC3875的电路结构和使用设计方法。     

Effect of Fog and Clouds on the Image Quality in Millimeter Communications

The effect of fog and clouds in millimeter communication is discussed, and the attenuation caused by fog and clouds is reviewed. Signal-to-noise ratio (SNR) of image is derived using relating models of fog and clouds attenuation. According to the relation of image quality and its signal-to-noise ratio, the system behavior is forecasted theoretically. It is shown that the signal-to-noise ratio of receiver at certain transmitter power is inverse with radio wave frequency, from about 70dB at 10GHz to 48dB for fog and 49dB for clouds. The image quality of received signal at certain transmitter power is inverse with radio wave frequency, from about 7 grade at 10GHz to 5.27 grade for fog and 5.37 grade for clouds. The above calculated results are consistent with experimental results.     

Windows系统中两种动态交换数据的方法

本文介绍了Ｗｉｎｄｏｗｓ环境下基于消息的ＤＤＥ和基于动态链接库的ＤＤＥＭＬ的区别，并详细叙述了如何使用ＤＤＥＭＬ编制Ｗｉｎｄｏｗｓ应用程序。     

高质量ZnO薄膜的退火性质研究

在LP－MOCVD中，我们利用Zn(C2H5)2作Zn源，CO2作氧源，在（0002）蓝宝石衬底上成功制备出皮c轴取向高度一致的ZnO薄膜，并对其进行500℃-800℃四个不同温度的退火。利用XRD、吸收谱、光致发光谱和AFM等手段研究了退火对ZnO晶体质量和光学性质的影响。退火后，（0002）ZnO的XRD衍射峰强度显著增强，c轴晶格常数变小，同时（0002）ZnOX射红衍射峰半高宽不断减小表明晶粒逐渐增大，这与AFM观察结果较一致。由透射谱拟合得到的光学带隙退火后变小，PL谱的带边发射则加强，并出现红移，蓝带发光被有效抑制，表明ZnO薄膜的质量得到提高。     

苯磺隆干悬浮剂技术浅析

通过对苯磺隆干悬浮剂项目的研究,进一步了解干悬浮剂的加工工艺和配方中各种助剂的相互作用;剖析助剂对主要技术指标的影响。     

APT（STLRI）—1.78型单模光纤（缆）连接器简介

利用引进的制造技术和设备,制作出了 APT(STLRI)—1.78型系列化光纤连接器。     

Enhanced light output in nitride-based light-emitting diodes by roughening the mesa sidewall

In this letter, we will report on a nitride-based light emitting diode with a mesa sidewall roughening process that increases light output power. The fabricated GaN-based light-emitting diode (LED) wafers were first treated through a photoelectrochemical (PEC) process. The Ga/sub 2/O/sub 3/ layers then formed around the GaN : Si n-type mesa sidewalls and the bottoms mesa etching regions. Selective wet oxidation occurred at the mesa sidewall between the p- and the n-type GaN interface. The light output power of the PEC treated LED was seen to increase by about 82% which was caused by a reduced index reflectance of GaN-Ga/sub 2/O/sub 3/-air layers, by a rough Ga/sub 2/O/sub 3/ surface, by a microroughening of the GaN sidewall surface, and by a selective oxidation step profile of the mesa sidewall that increases the light-extraction efficiency from the mesa sidewall direction. Consequently, this wet PEC treated process is suitable for high powered nitride-based LEDs lighting applications.