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李毅 《核电子学与探测技术》1995,15(3):184-188
多丝正比室中电子的最大漂移时间是逃逸门电路中的一个重要参数。这个参数的选择将影响逃逸门工作方式的多丝正比室的整体性能。通过实验测量得到了多丝正比室中电子的最大漂移时间的实际值和最大漂移时间随多丝正比室工作状态的变化,测量结果在实际中得到应用。 相似文献
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Ordered porous TiO2 thin films were fabricated on conductive glass by using colloid crystal template of polystyrene (PS) spheres. Microstructural characterization by scanning electron microscopy techniques was carried out to explore the porous structural changes due to the PS templates which could be controlled by adjusting the drawing rate. Photovoltaic performance was measured and this revealed the effect of microstructural changes. The results showed that monolayer porous TiO2 films and multilayer porous TiO2 films could be successfully prepared. And multilayer porous TiO2 films provided large surface area for dye absorption to increase the efficiency of dye-sensitized solar cells (DSSCs) which were assembled by porous TiO2 films. 相似文献
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Solder bumps are widely used in surface mount components, which provide electrical and mechanical connection between the chip/package and the substrate. As the solder bump getting smaller in dimension and pitch, it becomes more difficult to inspect the solder defects hidden in the IC package. In this paper, an intelligent inspection method using the scanning acoustic microscopy(SAM) and the fuzzy C-means(FCM) algorithm was investigated. A flip chip package of FA10 was chosen as the test sample. The SAM tests of FA10 were carried out in C-scan mode. The sub-image of every solder bump was segmented from the SAM image. The statistical features were then calculated and adopted for clustering of solder bumps using the FCM algorithm. The recognition results of FCM reached a high accuracy of 94.3%. The intelligent system is effective for defect inspection in high density packages. 相似文献
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目前.玩具企业产品被仿冒的现象比较严重。往往是一个企业苦心研制的新产品刚刚投放市场.仿冒的产品即跟随而来。由于省却了研发费用.仿冒产品的成本低廉.反而更容易占领市场.选成了玩具企业老板们气愤不过却又无可奈何的心痛。 相似文献
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核心提示:知识产权在玩具企业研发销售新产品中,越来越重要,新产品包含了企业的知识产权,它能通过一定的方式和途径加以保护,如果保护得当,它能给企业带来许多的商机和财富;如果保护不当,它不会给企业造成很大的损失。 相似文献
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Single-event transient pulse quenching(Quenching effect)is employed to effectively mitigate WSET(SET pulse width).It enhanced along with the increased charge sharing which is norm for future advanced technologies.As technology scales,parameter variation is another serious issue that significantly affects circuit’s performance and single-event response.Monte Carlo simulations combined with TCAD(Technology Computer-Aided Design)simulations are conducted on a six-stage inverter chain to identify and quantify the impact of charge sharing and parameter variation on pulse quenching.Studies show that charge sharing induce a wider WSET spread range.The difference of WSET range between no quenching and quenching is smaller in NMOS(N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor)simulation than that in PMOS’(P-Channel Metal-Oxide-Semiconductor Field-Effect Transistor),so that from parameter variation view,quenching is beneficial in PMOS SET mitigation.The individual parameter analysis indicates that gate oxide thickness(TOXE)and channel length variation(XL)mostly affect SET response of combinational circuits.They bring 14.58%and 19.73%average WSET difference probabilities for no-quenching cases,and 105.56%and 123.32%for quenching cases. 相似文献