Calorimetric study and thermodynamic description of Ga-Ge-Li liquid alloys

This publication contains the thermodynamic results received by the drop calorimetry method. The experiments were conducted for four different cross sections, at the temperature of 1080 K. The investigated alloys were as follows: (Ga_0.75Li_0.25)_1-xGe_x, (Ge_0.50Li_0.50)_1-xGa_x, (Ga_0.50Li_0.50)_1-xGe_x, (Ga_0.25Li_0.75)_1-xGe_x. The mixing enthalpy changes measured for all four cross sections of the Ga-Ge-Li system are characterized by negative deviations from the ideal solutions. The Muggianu model with the ternary interaction parameters was applied to elaborate the experimental data of the mixing enthalpy change with the use of the optimized thermodynamic parameters of the binary systems available in the literature.     

Using d-limonene as the non-aromatic and non-chlorinated solvent for the fabrications of high performance polymer light-emitting diodes and field-effect transistors

Aiming to environment protection, green solvents are crucial for commercialization of solution-processed optoelectronic devices. In this work, d-limonene, a natural product, was introduced as the non-aromatic and non-chlorinated solvent for processing of polymer light-emitting diodes (PLEDs) and organic field effect transistors (OFETs). It was found that d-limonene could be a good solvent for a blue-emitting polyfluorene-based random copolymer for PLEDs and an alternating copolymer FBT-Th₄(1,4) with high hole mobility (μ_h) for OFETs. In comparisons to routine solvent-casted films of the two conjugated polymers, the resulting d-limonene-deposited films could show comparable film qualities, based on UV–vis absorption spectra and observations by atomic force microscopy (AFM). With d-limonene as the processing solvent, efficient blue PLEDs with CIE coordinates of (0.16, 0.16), maximum external quantum efficiency of 3.57%, and luminous efficiency of 3.66 cd/A, and OFETs with outstanding μ_h of 1.06 cm² (V s)⁻¹ were demonstrated. Our results suggest that d-limonene would be a promising non-aromatic and non-chlorinated solvent for solution processing of conjugated polymers and molecules for optoelectronic device applications.     

Structure and electronic properties of SiC thin-films deposited by RF magnetron sputtering

SiC thin-films were prepared by RF-magnetron sputtering technique(RMS) with the target of single crystalline SiC and then annealed. The surface morphology of thin-films was characterized by AFM. The result shows that the surface of the thin-films is smooth and compact; XRD analysis reveals that the thin-films are amorphous. The thickness, square-resistance and curves of resistance—temperature were measured. The results show that the curves of lnR versus 1/kT both before and after annealing satisfy the expression of lnR∝△W/kT, where ?W is electron excitation energy in the range of 0.014 2-0.018 5 eV, and it has a trend of increasing when the temperature is increased. After synthetical analysis we get the conclusion that the electronic mechanism of the thin-films is short distance transition between the localized states in the temperature range of 25-250 ℃. The resistivity is in the range of 2.4×10-3-4.4×10-3 Ω·cm and it has the same trend as electron excitation energy when annealing temperature is increased, which further confirms the electronic mechanism of thin-films and the trend of electron excitation energy versus annealing temperature.     

化合物TbMn6Sn6的磁性和磁相变

采用分子场理论模型对稀土-过渡族金属间化合物的磁性、自旋重取向相变和场诱导的一级磁相变进行了研究.从理论上计算了TbMn6Sn6的易磁化方向随温度的变化以及不同温度时的磁化曲线,描述了自旋重取向相变和场诱导的一级磁相变.基于单离子模型计算了Tb离子和化合物的一阶和二阶磁晶各向异性常数及其随温度的变化,得到了和实验数据基本一致的结果.结果表明:Mn次晶格和Tb次晶格磁晶各向异性能之间的相互竞争是导致自旋重取向相变的物理机制,而稀土离子的四阶晶场项对场诱导的一级磁相变产生很大的影响.     

基于数据挖掘的铜转炉渣产出量预报

为实现铜转炉渣产出量的及时准确预报,提出应用数据挖掘技术从现场积累的大量生产数据中发掘相关规律.首先应用线性回归技术建立了仅考虑主要影响因素(铜锍含铁量)的粗略预报模型,而后,应用神经网络技术建立了考虑到多个次要影响因素的误差补偿模型,从而改进预报效果.利用实际生产数据对模型进行了仿真测试,仿真结果表明,模型预报效果良好.     

氧化铈对Fe55自熔合金喷焊层组织与性能的影响

通过水雾化方法制备了Fe55自熔合金粉末,并通过在粉末中加入不同稀土量用氧乙炔火焰喷焊的方法在45钢板基材表面制备合金涂层,研究了稀土氧化铈对Fe55自熔合金喷焊层的组织和性能的影响.     

Low temperature seamless joining of SiC using a Ytterbium film

Monolithic SiC, for the first time, was seamless joined at a low temperature of 1200 °C using electric field-assisted sintering technology. A 300 nm Yb coating on SiC was used as the joining filler to form Yb₃Si₂C₂ via an in-situ reaction with the SiC. A liquid phase was formed by an eutectic reaction between Yb₃Si₂C₂ and SiC. Almost completely seamless joints were formed by the precipitated SiC grains, which were fully consolidated with the SiC matrix with the help of in-situ formed liquid phase, followed by its elimination under the uniaxial pressure. The bending strength of the seamless joint joined at 1500 °C for 15 min was as high as 257.2 ± 31.1 MPa, which was comparable to the strength of the SiC matrix. As a result, the failure occurred in the matrix indicated a sound joint was obtained. The proposed low temperature seamless joining could potentially be used for joining of SiC-based composite.     

a-C:F:H薄膜的化学键结构

使用CF4和CH4为源气体,利用射频等离子体增强化学气相沉积法,制备了a-C:F:H薄膜样品.采用拉曼光谱仪、傅里叶变换红外光谱仪、X射线光电子能谱仪(XPS)对薄膜的结构进行了测试和分析.研究发现:该膜呈空间网状结构,膜内碳与氟、氢的结合主要以sp3形式存在,而sp2形式的含量相对较少;在薄膜内主要含有C-Fx(x=1,2,3)、C-C、C-H2、C-H3等以及不饱和C=C化学键;同时,薄膜中C-C-F键的含量比C-C-F2键的含量要高.在不同功率下沉积的薄膜,其化学键结构明显不同.