工艺参数对自保护药芯焊丝焊接烟尘的影响

焊接烟尘中含有大量有害物质，严重威胁到焊工的身体健康，所以针对焊接烟尘的研究具有十分重要的意义. 通过高速摄像采集系统研究了焊接时熔滴的过渡模式，通过焊接烟尘收集装置对焊接烟尘的发尘量进行测量，对不同工艺参数下产生的焊接烟尘进行了成分分析. 结果表明，在大的电参数下，熔滴过渡模式对烟尘的发尘量影响不大，但过大的热输入导致了熔滴、母材的蒸发量和焊接烟尘的增加，直流反接下，熔滴过渡主要表现为排斥过渡，出现较多的焊接飞溅颗粒，导致直流反接时的焊接烟尘增多. 不同的极性规范下，烟尘的元素类型基本一致. 由于在直流反接时，更多的低电离物质在熔滴底部燃烧蒸发，导致低电离物质元素含量相比于直流正接时较多. 而在直流正接时，阴极斑点总在氧化膜处进行燃烧，导致更多的氧化物元素蒸发，形成焊接烟尘. 因此，直流正接下氧化物元素含量比直流反接下的元素含量多.     

Delayed failure of ceramic matrix composites in tension at elevated temperatures

Ultimate tensile strength of five different continuous fiber-reinforced ceramic matrix composites (CMCs), including SiC_f/BSAS (two dimensional (2D), 2 types), SiC_f/MAS (2D), SiC_f/SiC (2D), and C_f/SiC (2D, 2 types), was determined as a function of test rate at 1100–1200 °C in air. All five CMCs exhibited a significant dependency of ultimate tensile strength on test rate such that the ultimate tensile strength decreased with decreasing test rate. The dependency of ultimate tensile strength on test rate, the applicability of preload technique, and the predictability of life from one loading configuration (constant stress-rate loading) to another (constant stress loading) all suggested that the overall, phenomenological delayed failure of the CMCs would be governed by a power-law type of slow crack growth.     

5%Si高硅奥氏体不锈钢元素偏析及均匀化处理

 高硅奥氏体不锈钢由于高含量硅元素的加入使其具有优异的耐高温腐蚀性能和较低的成本,在制酸行业有着潜在的应用价值。然而,该合金中高含量硅元素的加入会促进凝固过程中溶质再分配,进而造成显著的元素偏析,最终导致合金内部产生枝晶组织和大量的有害相。对铸锭组织进行均匀化处理能够有效消除枝晶与元素偏析,促进析出相回溶和枝晶消融,从而改善材料的热塑性,有效应对热变形开裂问题。因此,采用金相显微镜(OM)、扫描电镜能谱分析(SEM/EDS)、电子探针(EPMA)、JMatPro软件计算等方法,研究了实验室条件下制备的5%Si高硅奥氏体不锈钢铸锭的显微组织和元素分布状态,通过残余偏析指数、扩散动力学计算并结合均匀化处理试验验证,最终确定了5%Si高硅奥氏体不锈钢合理的均匀化处理工艺。结果表明,5%Si高硅奥氏体不锈钢凝固过程中钼元素偏析最为严重,通过残余偏析指数模型计算得到的均匀化动力学方程可用来指导该成分合金的均匀化处理工艺;5%Si高硅奥氏体不锈钢经过1 150 ℃×12 h均匀化处理后,铸锭内枝晶消融,元素偏析基本消除,析出相与铁素体回溶到基体中,合金转变为全奥氏体组织,热塑性得到改善;当加热温度达到1 250 ℃时,合金出现过烧现象,晶界开始熔化。     

Controlled interconversion of semiconducting and metallic forms of polyaniline nanofibers

Self-assembled polyaniline nanofibers doped with 2-acrylamido-2-methyl-1-propanesulfonic acid were prepared by oxidative polymerization of aniline in the presence of a nonionic surfactant. These nanofibers were dedoped to the semiconducting emeraldine base and then redoped to the metallic emeraldine hydrochloride. It was possible to introduce a different dopant anion from that used in the initial synthesis with no significant changes in fiber morphology or diameter, as observed by scanning electron microscopy (SEM). The method of sample preparation for SEM significantly affected the observed morphology. Deposition from aqueous dispersions resulted primarily in nanofibers that ranged in diameter from 28 to 82 nm (average: 56 nm), whereas drying to solid powder resulted in a less fibrous material. UV–vis–NIR absorbance spectroscopy indicated that the electronic structure of the emeraldine base nanofibers was identical to bulk emeraldine base obtained by conventional synthesis. Estimates from X-ray diffraction data suggested that the fractional crystallinity of emeraldine hydrochloride nanofibers did not differ significantly from the bulk powder.     

Reactively sputtered N-doped titanium oxide films as visible-light photocatalyst

Nitrogen-doped titanium oxide (TiO_xN_y) films were prepared by reactive magnetron sputtering of a titanium metal target in gas mixtures of argon, oxygen and nitrogen. Two types of nitrogen species are formed in the films following the fraction of N₂ (F_N2) in the reactive atmosphere. One is substitutional nitrogen in anatase titania phase and the other is nitrogen in TiN phase. In a large range of F_N2 from 0 to 0.57, TiO_xN_y films in anatase structure with about 1.0–1.4 at.% substitutional nitrogen are produced and the films exhibit red shifts to ∼ 500 nm from the absorption edge of ∼ 380 nm of undoped TiO₂. The nitrogen is readily doped in the films by energetic nitrogen ions in the plasma and the films exhibited photocatalytic properties under visible light. When excess nitrogen is supplied as the F_N2 above 0.75, the resulting film contains 20.8 at.% of nitrogen with formation of TiN that makes the film opaque and destroys the photocatalytic activity largely.     

Synthesis and electrochemical properties of nickel oxide/carbon nanofiber composites

The electrospinning of polyacrylonitrile (PAN) with a polyaniline and graphene sol–gel mixture produced uniform, smooth fibers with an average diameter of 0.3 μm. These electrospun fibers were stabilized for 2 h at 200 °C and then carbonized at 800 °C for 5 h. Composites were prepared by depositing Ni(OH)₂ on the carbon nanofibers (CNFs) and calcining them at different temperatures. The composites were characterized with X-ray diffraction (XRD), transmission electron microscopy (TEM) and scanning electron microscopy (SEM). The effect of the calcination temperatures on the electrochemical properties was studied using cyclic voltammetry and electrochemical impedance spectroscopy. The specific capacitance (SC) was found to be highest (738 F g⁻¹) at a calcination temperature of 400 °C. The charge transfer resistance (R_p) decreased as the calcination temperature was increased. However, the electrical double layer capacitance (EDLC) increased with an increase in the calcination temperature. The EDLC increased from 0.144 F g⁻¹ at a calcination temperature of 100 °C to 485 F g⁻¹ at a calcination temperature of 500 °C.     

Facial synthesis of dandelion-like g-C3N4/Ag with high performance of photocatalytic hydrogen production

Nowadays, energy shortage is one of the major problems in the world. Photocatalytic hydrogen production is a new type of energy technology with good application prospect. As a new type of photocatalytic semiconductor material, g-C₃N₄ has attracted much attention as a photocatalyst. By ultrasonic treatment of a mixed solution of g-C₃N₄ and bovine serum albumin, followed by adding a certain amount of silver nitrate solution and then directly hydrothermal treatment, a special dandelion-like g-C₃N₄/Ag (D-g-C₃N₄/Ag) was prepared. The scanning electronic microscopy, transmission electronic microscopy, X-ray diffraction, Fourier transform infrared, fluorescence and physicochemical adsorption methods were used to characterize the morphology and structure of D-g-C₃N₄/Ag. In addition, the photocatalytic H₂ production of D-g-C₃N₄/Ag with different Ag loadings or in different sacrificial agents and different pH conditions were investigated. The results indicated that when triethanolamine was used as sacrificial agent, photocatalytic hydrogen efficiency was the best, and the rate of photocatalytic hydrogen production reached 862 μmol g⁻¹ h^{− 1} as the Ag loading was 4%.     

Sodium bismuth titanate-based lead-free RAINBOW piezoelectric devices

The piezoelectric properties of lead-free piezoelectric ceramics are normally lower than those of lead oxide-based ceramics. In order to enhance the electromechanical performance of lead-free piezoelectric ceramics, an asymmetric chemical reduction was applied to sodium bismuth titanate (NBT)-based piezoelectric ceramics. Similar to the lead-containing ceramics, a curvature structure can be induced by the reduction in the NBT-based materials and lead-free RAINBOW (reduced and internally biased oxide wafer) devices can be fabricated. A large displacement (approximately 17 μm) under an electric field of 900 V/mm and high piezoelectric sensitivity (>4000 pC/N) under a stress, which are related to the reduction induced curvature, can be measured in the NBT-based devices. The apparent piezoelectric response of the lead-free RAINBOW devices is comparable to that of Pb(Zr,Ti)O₃-based devices. We proposed that apart from the piezoelectric properties, flexoelectric effect could also be a contributing mechanism for the observed apparent piezoelectric response in RAINBOW devices.     

Structural,optical and electrical properties of Cu2FeSnSe4 and Cu(In,Al)Se2 thin films

Cu-based semiconductors Cu₂FeSnSe₄ (CFTSe) and Cu(In, Al)Se₂ (CIAS) have been fabricated using radio-frequency magnetron sputtering combined with rapid thermal selenization processing. For CFTSe, the heating rate ranging from 60 to 150 °C/min results in a difference in structure, morphology and optical properties. Thin film exhibits a pure phase structure, smooth surface and a band gap of 1.19 eV as the heating rate elevated to 90 °C/min. Furthermore, the CFTSe thin film selenized at 90 °C/min own the smallest value of cell volume compared with the others samples, which represents a more stable structure. In terms of the other Cu-based material CIAS, three different selenization pressures, i.e., 1, 5 and 10 Torr, have been employed for CIAS preparation. Thin film transforms into single phase with dense morphology along with the pressure of 1 Torr. The diverse band gap of CIAS thin films from 1.34 to 2.18 eV attribute to two reasons: (i) the various Al content will affect the hybridization degree of Al–Se, and finally tunes the band structure, (ii) amounts of CuSe has a certain degree of effect on the band gap of the CIAS. In addition, the electrical properties of CFTSe and CIAS are also researched with the open circuit voltage (V_oc) of 94 and 365 mV, respectively, signifying potential applications of CFTSe and CIAS for the thin film solar cells.     

铝/钢电弧辅助激光对接熔钎焊铺展特性

采用小功率TIG电弧辅助激光热源进行5A06铝合金和热镀锌ST04Z钢的预置粉末对接熔钎焊工艺试验,通过SEM,Photoshop来研究预留间隙、背面填涂钎剂、激光热输入、辅助电弧电流、热源中心间距、填加焊丝对熔钎焊接头铺展宽度的影响. 结果表明,预留小于0.5 mm的间隙与背面填涂钎剂均可增大铺展宽度;在未焊穿的前提下,随激光热输入和辅助电弧电流的增加,铺展宽度增大;随热源中心间距的增大,铺展宽度先增加后减小. 焊接熔池中填加Al-Si焊丝较未填加焊丝的铺展性更好,获得连续、美观的焊缝表面形貌.