新型低压抽屉式开关柜在冶金系统的应用

介绍新型低压抽屉式开关柜的结构性能和特点，并与早期低压柜作了比较。阐述了新型低压抽屉式开关柜在冶金系统应用中的几点改进情况。     

Highly oriented star-like patterns observed on GaSe epilayers grown on Si(111)

Epitaxial lamellar gallium selenide (GaSe) semiconductors have been grown on trench-patterned silicon (Si) substrates by molecular beam epitaxy. An intriguing star-like patterned morphology was identified by atomic force microscopy on these epilayers. This non-trivial feature can be correlated with the accumulation of stacking faults of two concurrent epitaxial domains around self-oriented triangular pits developed earlier on the Si(111) surface by the chemical etching. Crystallographic considerations show how the stars can be formed.     

Trade-offs in scan path and BIST implementations for RAMs

In this article we propose efficient scan path and BIST schemes for RAMs. Tools for automatic generation of these schemes have been implemented. They reduce the design effort and thus allow the designer to select the more appropriate scheme with respect to various constraints.     

Shorts in self-checking circuits

It has been noted by several authors that the classical stuck-at logical fault model might not be an appropriate representation of certain real failures occurring in integrated circuits. Shorts are an important class of such faults. This article gives a detailed analysis of the effects of shorts in self-checking circuits and proposes techniques for dealing with them. More precisely, we show that, unlike other faults such as stuck-at, stuck-on, and stuck-open—which produce only single errors in the place they occur—shorts can produce double errors on the two shorted lines. In particular, feedback shorts can produce double errors on the two shorted lines. The double error is unidirectional for some feedback shorts and non-unidirectional for some others. Furthermore, in some technologies (e.g., CMOS), non-feedback shorts can also produce double non-unidirectional errors. We also show that unlike stuck-at, stuck-on, and stuck-open faults, redundant shorts can destroy the SFS property. Then we propose several techniques for coping with these problems and we illustrate the results by circuit implementation examples.The present study is given for NMOS and CMOS circuits but we show that it is valid for any other technology.     

利用天然地震震源点确定活动断裂深部延伸性状的尝试

本文首先运用卫星影像,对临汾—运城盆地中主要活动断层的平面展布状况进行了解译。在此基础上,利用天然地震震源点的三维生标,探索性地研究与确定了各条断层的深部延伸性状,建立起了盆地内断裂构造的三维格架。主要结论有:(1)边缘断裂多数是深达莫霍面的(38km)伸展性铲形断裂;(2)霍山西麓山前大断裂的深部延伸为直立状,深度达莫霍面(38km)。(3)盆地内的其它断层多数是铲形断层的对偶断层,产状为倾斜状,与铲形断层相遇后而终止,延伸深度一般不超过30km;(4)区内存在4个水平滑脱面(或层),其深度分别为4.5～5.5km,9.5～10.5km,18.5～20.5km,35.5～37.5km,这些面(或层上)震源点分布较密集;(5)区内北部、中部、南部,断层组合形式稍有差别,并控制、形成了不同的地貌形态。     

基于异常检测的NVP表决器

一般的表决器多是针对一维输出进行表决,构建表决器相对应的决策树,预先给出阈值来制定表决策略。但是对于多维输出的表决器研究相对较少,尤其是输出各个变量之间非独立的情况下,不能将多维输出的每个变量进行单独表决,否则会引入异常点,影响表决结果。实验表明,将异常检测技术引入到表决器中,净化需要表决的数据,可以提高表决结果的准确率。     

逻辑表达式图的实现及其在集成电路故障 可测性中的应用

数字电路的可靠性有着至关重要的影响,测试是其重要保证,测试向量的自动生成(ATPG)在数字电路的测试中占有重要地位;逻辑表达式图(Boolean Expression Diagrams,BED)是用于逻辑函数与逻辑电路表达与运算一种数据结构,能够将逻辑电路在线性空间复杂度内表达,是二元判决图(Binary Decision Diagrams, BDD)在概念上的推广且保留着BDD的许多有用的性质。讨论了BED的性质与实现方法,并将BED用于逻辑电路呆滞型故障测试向量的自动生成中,基于BED的测试算法直接将原电路与故障电路做异或运算后用BED表达再化简或判断其可满足性,算法能充分使用逻辑代数的化简规则和利用电路与故障电路的相似性。实验结果表明,基于BED的测试方法具有较低的复杂度。     

雅砻江楞古水电站场址区宋玉断层活动性研究

楞古水电站位于区域构造复杂的雅砻江中游, 场址周边断裂构造较发育, 场址区内发育有较大的宋玉断层, 研 究其活动性对枢纽建筑布置和工程抗震设防措施均具有重要意义。在遥感解译的基础上, 通过野外验证和追踪调 查, 结合断层构造岩石英形貌扫描、 电子自旋共振(ESR) 测龄和近代地震震中分析, 确定了宋玉断裂的活动年代, 得 出了宋玉断层不属于工程活动断层的结论。