Good dielectric performance and broadband dielectric polarization in Ag,Nb co-doped TiO2

Due to the demand of miniaturization and integration for ceramic capacitors in electronic components market, TiO₂-based ceramics with colossal permittivity has become a research hotspot in recent years. In this work, we report that Ag⁺/Nb⁵⁺ co-doped (Ag_1/4Nb_3/4)_xTi_1−xO₂ (ANTOx) ceramics with colossal permittivity over a wide frequency and temperature range were successfully prepared by a traditional solid–state method. Notably, compositions of ANTO0.005 and ANTO0.01 respectively exhibit both low dielectric loss (0.040 and 0.050 at 1 kHz), high dielectric permittivity (9.2 × 10³ and 1.6 × 10⁴ at 1 kHz), and good thermal stability, which satisfy the requirements for the temperature range of application of X9R and X8R ceramic capacitors, respectively. The origin of the dielectric behavior was attributed to five dielectric relaxation phenomena, i.e., localized carriers' hopping, electron–pinned defect–dipoles, interfacial polarization, and oxygen vacancies ionization and diffusion, as suggested by dielectric temperature spectra and valence state analysis via XPS; wherein, electron-pinned defect–dipoles and internal barrier layer capacitance are believed to be the main causes for the giant dielectric permittivity in ANTOx ceramics.     

Nitrogen-doped hierarchically porous carbon obtained via single step method for high performance supercapacitors

In the present work, nitrogen doped hierarchically activated porous carbon (APC) samples have been synthesized via single step scalable method using ethylene di-amine tetra acetic acid (EDTA) as precursor and KOH as activating agent. Activated porous carbons with different pore sizes have been developed by varying the activation temperature. SEM, TEM and SAXS analysis suggest that with variation of activation temperature, a hierarchical porous structure with interconnected meso-pore and micro pores has been achieved. The sufficiently high surface area of the synthesized materials provides active sites to enhance the diffusion of ions between the electrolyte and the carbon electrodes. The electrode prepared at 800 °C activated sample exhibited highest specific capacitance of 274 Fg^-1 in two electrode setup, at a current density of 0.1 Ag^-1 in 1 M aqueous H₂SO₄. Along with this, it showed maximum energy density of 9.5 Whkg^?1 at a power density of 64.5 Wkg^-1. The remarkable electrochemical performance reveals that the synthesized nitrogen doped activated carbon electrodes derived from EDTA can be tuned to have optimum pore structure and pore size distribution for better electrochemical performance, so it can be considered as a potential electrode material for applications in electrochemical energy storage.     

Modeling the effect of deep traps on the capacitance–voltage characteristics of p-type Si-doped GaAs Schottky diodes grown on high index GaAs substrates

Numerical simulation, using SILVACO-TCAD, is carried out to explain experimentally observed effects of different types of deep levels on the capacitance–voltage characteristics of p-type Si-doped GaAs Schottky diodes grown on high index GaAs substrates. Two diodes were grown on (311)A and (211)A oriented GaAs substrates using Molecular Beam Epitaxy (MBE). Although, deep levels were observed in both structures, the measured capacitance–voltage characteristics show a negative differential capacitance (NDC) for the (311)A diodes, while the (211)A devices display a usual behaviour. The NDC is related to the nature and spatial distribution of the deep levels, which are characterized by the Deep Level Transient Spectroscopy (DLTS) technique. In the (311)A structure only majority deep levels (hole traps) were observed while both majority and minority deep levels were present in the (211)A diodes. The simulation, which calculates the capacitance–voltage characteristics in the absence and presence of different types of deep levels, agrees well with the experimentally observed behaviour.     

dU/dt引发的MOSFET误导通分析

分析了MOSFET误导通产生的原因,分别从原理和理论推导两个方面作了分析,主要考虑了开关管中寄生参数对开关特性的影响。通过求解误导通发生的条件,得到哪些参数会导致误触发,最后给出了仿真。文中还提出如何避免MOSFET误导通产生,以及改进方法,对减少实际应用中MOSFET破坏性损坏有一定意义。     

超高压大容量铝电解电容器的研制

分析了大功率设备用超高压大容量铝电解电容器的特点,通过研制工作电解液、制订制作工艺及零部件设计方案,研制出的超高压大容量铝电解电容器具有损耗角正切小(tgδ为0.25)、承受纹波电流能力强(100 Hz,2.12～27.8 A)及寿命长的特点,耐久性达到85℃,5 000 h。     

新型毫米波微带带通滤波器

介绍了一种新型的加载电容型毫米波微带带通滤波器。对这种滤波器进行了分析,推导出了滤波器中所用谐振单元间的耦合系数。该滤波器通过加载电容而出现慢波效应,使得在不改变电路性能的情况下,减小了电路尺寸。同时由于电路中加载电容形成的慢波效应而出现了带阻效应,因此对谐波有很好的抑制作用。利用高频分析软件CST仿真分析并设计了这种新型的加载电容型毫米波微带带通滤波器,实验结果与设计曲线结果相符。     

基于充放电原理实现的微电容测量电路

具有抗分布电容以及简单实用等特性的充放电电路是目前微电容测量中广泛采用的一种测量电路。本文对基于充放电原理的微电容测量电路进行了深入研究，并介绍一种基于充放电原理的实用电路。     

电容传感器在使用中存在的几个问题及处理方法

随着电容测量技术的迅速发展，电容传感器在非电量测量和自动检测中得到广泛应用，但它在使用过程中也存在一些问题，针对在使用电容传感器过程中存在的几个问题，从电容传感器的原理和工作过程两个方面进行了讨论，并提出行之有效的处理方法。     

一种带容性合并电路的外斜连MHD发电机

本文研究了有新颖容性合并电路的MHD发电机在法拉第联接下输出特性,指出由于新颖容性合并电路具有工作点可调性,在合理的参数匹配下有平稳的输出特性;从而提出了含补偿电源的容性合并电路和MHD发电机外斜连方案。该方案具有斜连发电机的特征,又具有法拉第发电机高焓取出的优点,而且可减小阴极导电渣对发电机寿命的影响,是一种有发展前景的功率调节器方案。     

形成前处理对提高铝箔比容的影响

阳极氧化膜是电解电容器的工作介质，其质量的优劣直接影响着铝电解电容器的性能。若在形成前将腐蚀箔在７５℃左右的Ａ溶液（〔Ａ〕≈０．２ｍｏｌ／Ｌ）中浸泡约１０ｍｉｎ，然后在５７０℃左右热处理３ｈ，阳极氧化膜的结构与性能将得到改善，铝箔比容可提高２５％～５０％，而形成电能降低３０％～５０％，从而可有效提高形成效率。