TiO2薄膜电极的制备及光电催化性能

为了得到光电化学性能稳定、光催化活性好、制备方法简便的TiO2光电极,采用涂覆法制备了纳米TiO2薄膜光电极.XRD,SEM结果表明电极上涂覆的TiO2的晶型为锐钛型,纳米TiO2在电极表面分布均匀,薄膜厚度在10μm左右,且电极表面有一定的粗糙度.交流阻抗图谱分析显示TiO2电极在光照下能进行光电化学反应.应用于20mg/L苯酚溶液的降解中,结果表明,该电极光电催化降解性能优于光催化降解性能,电场在降解过程中发挥了作用;对照态光氧化过程基本无化学反应发生;暗态下电极上也无吸附现象;反应后电极无剥落损伤.     

光电催化氧化技术中光电反应器的研究与发展

从悬浮态光电反应器及固定态光电反应器两方面介绍了光电反应器的类型,指出通过金属沉积与半导体复合对光电极进行改性是提高固定态光电反应器效率的有效途径,对影响光电反应器效率的主要因素如光源、材质、外加偏压、溶液条件及反应氛围进行了讨论,并对光电反应器未来的发展提出了一些建议。     

Interface engineering of nanoceramic hematite photoelectrode for solar energy conversion

This work addresses the role of different modifiers on the overall photocurrent response, which allowed a dual material insertion, increasing the charge separation without compromise the surface catalysis. Sn-addition onto nanoceramic hematite photoelectrodes clearly increased flat band potential, promoting a good charge separation, and shifting the onset to a higher potential, attributed to the surface-trapping state created by this modification. Notoriously, Sn-hematite photoelectrodes loaded with NiFeO_x exhibited the highest photocurrent density, suggesting a partially recovered surface-trapping states created during the electrode designing. The well-known cocatalyst acted in the overall photoelectrocatalytic response with no significant effect on the turn-on voltage, in other words, with minor effect related to catalytic efficiency. The dual modification contributes to understand the role of different modifiers allowing to satisfactorily improve charge separation while maintaining the conductivity attributed to IV-group ions.     

Pd纳米晶修饰TiO2纳米管阵列光电极的制备及性能

为提高TiO₂的可见光催化性能,采用阳极氧化法在Ti箔上原位生成TiO₂纳米管阵列,再利用阴极电沉积法制备了贵金属Pd纳米晶修饰的TiO₂纳米管阵列光电极,并利用扫描电子显微镜（SEM）、X-射线光电子能谱（XPS）及紫外-可见漫反射光谱（UV-vis DRS）对其表观形貌、表面形态及光吸收性能进行表征．结果表明:Pd纳米晶有效地修饰在TiO₂纳米管阵列的表面,且以Pd⁰形式存在．此外,Pd纳米晶修饰明显拓展了TiO₂纳米管阵列的可见光响应范围．以甲基蓝为模型污染物,重点考察阴极沉积电压及沉积时间对其光催化性能的影响．结果表明:阴极沉积电压为-0.8 V、沉积时间为10 min对甲基蓝的光催化降解效果最佳,且符合拟一级反应动力学模型．模拟太阳光下光照120 min对甲基蓝的降解率可达71.4％,是纯TiO₂纳米管阵列光电极的1.5 倍．     

Photoelectrochemical properties of porous silicon based novel photoelectrodes

Porous silicon interfaces have been modified with nitrided TiO₂ (TiON) nanoparticles to develop highly efficient photoelectrodes. Photoelectrodes were prepared by impregnating the electrochemically prepared porous silicon microchannels with titanium oxynitride. Photocatalytic measurements were carried out on titanium oxynitride particles in water‐methanol mixture and the results showed a dependence on the nitrogen concentration. Among the photoelectrodes used for photocurrent measurements, porous silicon impregnated with TiO₂ nitrided at 600 °C showed maximum photocurrent increase after exposure to sunlight‐type radiation. The enhancement in photocurrent was one order more for the porous silicon/titanium oxynitride hetero‐structure than that of polished silicon/titanium oxynitride hetero‐structure. Photoelectrodes thus prepared were found to have stable performance for a period of six months. This observation promises the possibility of using porous silicon/titanium oxynitride hetero‐structures as efficient electrodes for photovoltaic cells. Copyright © 2010 John Wiley & Sons, Ltd.     

基于氧化亚铜光电极的制备及其光电化学性能的研究进展

氧化亚铜（Cu₂O）因具有合适的带隙、光响应好、价格低廉等优点,在光电化学（PEC）分解水和还原CO₂等领域引起广泛关注,是最重要的PEC光电极材料之一。本文回顾了近年来基于Cu₂O光电极的制备方法,如电化学法、物理沉积法、滴涂法、热氧化法、化学浴沉积法等,同时对不同的制备方法进行了比较。本文对基于其他过渡金属氧化物半导体材料来制备PEC光电极也具有一定的参考价值。另外,由于Cu₂O材料本身在电解液中易发生光腐蚀,光稳定性差,使得Cu₂O光电极在PEC上的应用受到很大限制。本文综述了表面修饰、半导体复合等改性手段来提高Cu₂O光电极的光稳定性,改善其PEC性能。最后指出Cu₂O光电极未来的研究重点在于探索新的电极制备方法、开拓新的改性手段以及多种改性手段的综合运用,从而进一步提高其PEC性能和应用前景。     

Photoelectrochemical properties of sol–gel-derived Ti1−xVxO2 solid solution film photoelectrodes

Ti_1−xV_xO₂ solid solution film photoelectrodes were prepared by the dip-coating sol–gel method. X-ray diffraction and X-ray photoelectron spectroscopy were employed to ensure the formation of the solid solution and their composition. Obvious photoresponses were observed in the visible region for the solid solution film electrodes with x0.05 and the red shift of the photoresponse was enhanced with increasing x. Moreover, the solid solution film electrodes were found to be photoelectrochemically stable. However, the onset potential of photocurrent shifted positively with increasing x. Band model of the solid solution was suggested to explain the effects of the vanadium incorporation on the photoelectrochemical properties.     

Formation and corrosion of InP/In contacts in hydrochloric acid

Flatband potentials, charge carrier concentrations and their frequency dispersions of p-type and n-type InP in 1.0 M HCl were determined. The cathodic decomposition of InP in this acidic solution is compared with the deposition process of indium from 1.0 M-HCl containing 0.1 M InCl₃. The share of the involved reactions, hydrogen evolution, InP decomposition and indium deposition are investigated. The reaction rates are generally smaller on p-type InP and the reaction speed is much slower but the principal reactions are the same. The kinetics of the indium deposition and dissolution are studied in detail. These reactions are discussed in terms of the preparation of watersplitting photoelectrodes with modified surfaces.     

三维ZnO/CdS光电极的制备及其光电化学性能研究

采用两步水热法,在FTO基底上制备了ZnO/CdS阵列薄膜。利用扫描电镜(SEM)和透射电镜(TEM)对样品的形貌和结构进行了表征,发现通过改变水热前驱体溶液中的表面活性剂,可以有效改变ZnO/CdS光电极的形貌。制备了一维和三维结构的ZnO/CdS薄膜,以制备的薄膜作为光电极,研究了其光电化学性能,发现三维ZnO/CdS电极具有更高的光电流密度和能量转化效率,分析了电极光电化学性能提升的内在机制。     

多孔TiO2纳米薄膜修饰的镍基光电极的制备和性能

引　言近年来 ,随着全球环境污染的进一步加剧 ,人们对清洁、无毒、可重复使用的能源———氢气的制备、储存及应用的研究日益重视 .其中 ,利用太阳能光解水或光助电解水为最理想的制氢途径 . 1972年 ,Ｆｕｊｉｓｈｉｍａ和Ｈｏｎｄａ[1] 发现光照下ＴｉＯ2 光电极可分解水制氢气 .此后 ,ＴｉＯ2 成为进行光化学转换及光催化降解有机物的重要的半导体材料 .近年来 ,纳米半导体材料的研究日新月异 ,在光催化、光电转换、光化学转换方面表现出诱人的应用前景 .通常制备ＴｉＯ2 的工艺有离子溅射法[2 ] 、热氧化法[3] 、电化学沉积法[4 ] 、化…