Reliability studies of MOCVD TiSiN and EnCoRe Ta(N)/Ta

Passivated single damascene copper SiO₂ damascene lines were evaluated in combination with TiSiN and Ta(N)/Ta diffusion barriers. Leakage current, breakdown and time-dependent dielectric breakdown properties were investigated on a wafer level basis for temperatures ranging between room temperature and 150 °C. It is found that the leakage performance of the wafers with a TiSiN barrier is better at room temperature, but at 150 °C the performance levels out with Ta(N)/Ta. Time-dependent dielectric breakdown measurements at 150 °C show that the lifetime of the interconnect is higher with the selected Ta(N)/Ta barrier than for TiSiN.     

Review: Modified Atmosphere Packaging and its effects on the microbiological quality and safety of produce

Modified Atmosphere Packaging and related technologies are increasingly used to extend shelf-life of fresh produce. This paper reviews the effect of such technology on the spoilage microbiological flora and food-borne pathogens which may be present in produce and also on the organoleptic properties of the product.     

具有势垒增强层的MSM光电探测器暗电流的计算

将具有完全晶格匹配势垒增强层的MSM－PD简化为一维模型，并通过理论分析，得出了它的暗电流特性，进一步得到器件暗电流与势垒增强层的关系。     

应用多孔阳极氧化电流—时间曲线比较壁垒膜厚

在有壁垒膜存在的表面,多孔膜的生长在氧化初期受到延迟阻碍,这一现象在直流恒压多孔阳极氧化电流一时间曲线上反映出来。电流达到稳态氧化的时间愈长,壁垒膜愈厚。文中应用此法判断了0.5MH_3BO_3介质的pH值、温度对壁垒阳极氧化膜厚的影响,并应用记录同一介质环境壁垒恒流阳极氧化的槽压一时间曲线得到验证。     

PtSi／p－Si肖特基势垒红外探测器的研制

介绍了ＰｔＳｉ／ｐ－Ｓｉ肖特基势垒红外探测器（简称ＩＲ－ＳＢＤ）的优化结构及探测机理，给出了探测器的光增益模型，并对器件进行了制作及性能测试。器件在７７Ｋ下，反偏４Ｖ时的反向漏电流为５×１０（－６）μＡ，对１．５２μｍ红外光的灵敏度为２．６９×１０（－２）Ａ／Ｗ，量子效率为２．４％。     

被动式活性炭氡采样器扩散控制管设计参数的选择

本文介绍被动式活性炭氡采样器扩散控制管设计参数的选择方法。通过对活性炭吸附氡量与暴露时间的关系式的线性化处理,选择了适当的扩散控制管的参数,可以大大减小温度对测量结果的影响,同时可保持探测器有较高的灵敏度。     

Pinhole density measurements of barriers deposited on low-k films

Evaluation of diffusion barrier integrity is an important issue in advanced interconnects. A diffusion barrier separating Cu from low-k must be as thin as possible and must not contain pinholes. We have developed a method for measuring pinhole density in diffusion barriers deposited on low-k materials. The method employs ellipsometric porosimetry for measuring diffusion of toluene in a porous low-k film beneath the barrier in question.     

Fast and accurate pricing of discretely monitored barrier options by numerical path integration

Barrier options are financial derivative contracts that are activated or deactivated according to the crossing of specified barriers by an underlying asset price. Exact models for pricing barrier options assume continuous monitoring of the underlying dynamics, usually a stock price. Barrier options in traded markets, however, nearly always assume less frequent observation, e.g. daily or weekly. These situations require approximate solutions to the pricing problem. We present a new approach to pricing such discretely monitored barrier options that may be applied in many realistic situations. In particular, we study daily monitored up-and-out call options of the European type with a single underlying stock. The approach is based on numerical approximation of the transition probability density associated with the stochastic differential equation describing the stock price dynamics, and provides accurate results in less than one second whenever a contract expires in a year or less. The flexibility of the method permits more complex underlying dynamics than the Black and Scholes paradigm, and its relative simplicity renders it quite easy to implement.     

一种新型的多层复合软包装材料

综述了高阻隔性层合食品软包装的现状及发展趋势。介绍了以ＰＣ为结构层的新型多层复合材料ＰＣ／ＥＶＯＨ／ＰＰ，并评价了它在高阻隔性、高温、高湿、共挤加工等方面的综合性能及用于层含软包装的可行性。     

Characteristics of Schottky Barrier Junction Based on Hexagonal Microtube ZnO

Hexagonal microtube ZnO was firstly grown on single crystal p-Si (111) substrates by hydrothermal method, and fabricated Ag/n-ZnO and Au/n-ZnO Schottky junction. Schottky effective barrier heights were calculated by I-V measurement. It is confirmed that the presence of a large amount of surface states related possibly to lattice imperfections existed near the surface leads to the pinning of the surface Fermi level at 0.35 eV below the conduction-band edge. Then the fabricated Schottky barrier junctions are evaluated for their use as UV photodetectors.