Centimeter-scale low-damage micromachining on single-crystal 4H–SiC substrates using a femtosecond laser with square-shaped Flat-Top focus spots

Femtosecond (fs) lasers have been proved to be reliable tools for high-precision and high-quality micromachining of ceramic materials. Nevertheless, fs laser processing using a single-mode beam with a Gaussian intensity distribution is difficult to obtain large-area flat and uniform processed surfaces. In this study, we utilize a customized diffractive optical element (DOE) to redistribute the laser pulse energy from Gaussian to square-shaped Flat-Top profile to realize centimeter-scale low-damage micromachining on single-crystal 4H–SiC substrates. We systematically investigated the effects of processing parameters on the changes in surface morphology and composition, and an optimal processing strategy was provided. Mechanisms of the formation of surface nanoparticles and the removal of surface micro-burrs were discussed. We also examined the distribution of subsurface defects caused by fs laser processing by removing a thin surface layer with a certain depth through chemical mechanical polishing (CMP). Our results show that laser-induced periodic surface structures (LIPSSs) covered by fine SiO₂ nanoparticles form on the fs laser-processed areas. Under optimal parameters, the redeposition of SiO₂ nanoparticles can be minimized, and the surface roughness Sa of processed areas reaches 120 ± 8 nm after the removal of a 10 μm thick surface layer. After the laser processing, micro-burrs on original surfaces are effectively removed, and thus the average profile roughness Rz of 2 mm long surface profiles decreases from 920 ± 120 nm to 286 ± 90 nm. No visible micro-pits can be found after removing ~1 μm thick surface layer from the laser-processed substrates.     

CLBO晶体化学机械抛光技术的研究

介绍了硼酸锂铯(CLBO)晶体的应用前景及在化学机械抛光过程中存在的问题,简要分析了晶体在常温下开裂的机理,选用无水溶剂对晶体进行化学机械抛光以防止加工过程中晶体的潮解开裂。分析了抛光液、压力、温度、pH值参数对抛光过程的影响,通过合适配比使速率可达1.5～2μm/min,且表面质量较好。     

CMP系统技术与市场

概述了CMP系统技术的发展历史、发展趋势以及在IC生产中的重要性,介绍了国外CMP设备主要制造厂家的设备型号和性能及CMP设备市场分布和需求,阐述了CMP系统技术的基础研究、关键技术和国内研究概况。     

Characterization and optimization of copper chemical mechanical planarization

The feature scale planarization of the copper chemical mechanical planarization (CMP) process has been characterized for two copper processes using Hitachi 430-TU/Hitachi T605 and Cabot 5001/Arch Cu10K consumables. The first process is an example of an abrasive-free polish with a high-selectivity barrier slurry, while the second is an example of a conventional abrasive slurry with a low-selectivity barrier slurry. Copper fill planarization has been characterized for structures with conformal deposition as well as with bumps resulting from bottom-up fill. Dishing and erosion were characterized for several structures after clearing. The abrasive-free polish resulted in low sensitivity to overpolish and low saturation levels for dishing and erosion. Consequently, this demonstrated superior performance when compared to the International Technology Roadmap for Semiconductors (ITRS) 2000 roadmap targets for planarization. While the conventional slurry could achieve the 0.13-μm technology node requirements, the abrasive-free polish met the planarization requirements beyond the 0.10-μm technology node.     

Chemical mechanical polishing of polymer films

Strategies to reduce capacitance effects associated with shrinking integrated circuit (IC) design rules include incorporating low resistivity metals and insulators with low dielectric values, or “low-κ” materials. Using such materials in current IC fabrication schemes necessitates the development of reliable chemical mechanical polishing (CMP) processes and process consumables tailored for them. Here we present results of CMP experiments performed on FLARE™ 2.0 using a specialized zirconium oxide (ZrO₂) polishing slurry. FLARE™ 2.0 is a poly(arylene) ether from AlliedSignal, Inc. with a nominal dielectric constant of 2.8. In addition, we provide insight into possible removal mechanisms during the CMP of organic polymers by examining the performance of numerous abrasive slurries. Although specific to a limited number of polymers, the authors suggest that the information presented in this paper is relevant to the CMP performance of many polymer dielectric materials.     

用于铜的化学机械抛光液的研究

文中介绍了一种以碱性抛光液对铜进行全局平面化的方法 ,讨论了以 Si O2 水溶胶为磨料的抛光液在Cu-CMP过程中的化学 (络合 )作用及反应机理 ,并给出了抛光液的配比及上机实验结果。结果表明 :该抛光液用于对带有阻挡层和介质层的铜抛光 ,达到了对铜层的高去除速率和高选择比 ,取得了较好的全局平面化效果     

常速度梯度射线追踪与二维层速度反演

速度问题是勘探地震学的核心 ,可以借助常速度梯度射线追踪方法 ,从反演的角度探讨速度建模问题。在射线追踪方面 ,从程函方程出发 ,将复杂的速度场剖分成小的矩形单元 ,并假设在每个矩形单元内速度具有常速度梯度 ,由此导出的一组常速度梯度射线追踪公式 ,可实现非均匀介质的射线追踪 ,具有适应性强、精度高和快速的优点。在层速度反演方面 ,采用相干速度反演的思想 ,根据各向同性介质中 ,零偏移距射线在界面处是法向入射的原理 ,建立了合成共中心点道集与射线深度偏移的正反演关系 ,由此利用合成共中心点道集与观测的共中心点道集逼近 ,采用层剥离方法进行层速度反演。通过理论推导与模型试算得到如下的认识与结论 :常速度梯度射线追踪具有较高的计算精度与效率 ,公式采用向量形式很容易推广到三维 ;确定层速度采用的是正反演相结合的方法 ,可得到稳定的速度场 ;该方法屏弃了基于双曲时矩关系确定层速度场的假设 ,使其能适应任意的速度分布。     

Potassium sorbate solutions as copper chemical mechanical planarization (CMP) based slurries

Copper depassivation and repassivation characteristics in potassium sorbate solutions, subsequent to mechanical abrading are reported. The identification of copper repassivation kinetics obtained subsequent to mechanical damage of copper protective films formed in sorbate based solutions is discussed. The repassivation rate of copper in sorbate based solutions was measured by means of a slurryjet system capable of measuring single particle impingments on microelectrodes. Copper repassivation rates measured by this slurryjet system in sulfate solutions containing 10 g L⁻¹ potassium sorbate were found to be in the range of 0.5-1.5 ms. An increase in the potassium sorbate concentration leads to a decrease in copper repassivation time at potentials ranging from 200 to 600 mV_Ag/AgCl. The impingement angle between the copper surface and a single abrasive particle has no impact on copper repassivation time nor peak current (I_max) values. XPS studies revealed that copper passivation in potassium based solution was due to the formation of a thin film which is constituted of: Cu₂O, Cu(OH)₂ and Cu(II)-sorbate, while copper(II)-sorbate is mainly present at the top levels of the passive film. It is therefore recommended that the use of potassium sorbate as a passivating component in conjunction with the addition of strong oxidizing agents in chemical mechanical planarization (CMP) slurry design should be considered.     

磨料对计算机硬盘NiP基板CMP质量的影响

磁盘表面质量直接影响了硬盘的磁存储密度,表面须达到优异的表面光滑度、没有表面缺陷.本文通过对镍磷基板的化学性质分析,讨论了其CMP机理,分析了浆料中的磨料在硬盘基板CMP中的重要性,指出浆料中的磨料不仅起到了机械研磨的作用,同时也充当了微型搅拌器的作用;通过实验分析了碱性浆料下磨料的浓度和粒径对镍磷基板CMP去除速率与表面粗糙度的影响;选用小粒径、低硬度的二氧化硅水溶胶磨料实现了较高的去除速率和较低的表面粗糙度.     

计算机系统能耗估量模型研究

为了解决计算机能耗估量问题,本文分析了计算机各部件的参数对能耗变化的贡献程度和参数之间的相关度,选取最能代表系统能耗变化的可监测参数建立了CMP模型,CMP模型可根据计算机系统处理任务时的状态不同而选取不同的能耗变化主导元件,利用这些元件的监测参数对计算机系统能耗进行估量。本文在各种任务状态下进行了实验,结果证明,CMP模型在计算机能耗估量中要优于常用的FAN模型和Cubic模型,尤其是在计算机做数据密集型任务的时候。