高温氨化合成GaN微晶

分别利用Ga2O3粉末和Ga2O3凝胶作为Ga源,采用NH3为N源,在950℃下,分别将两种反应物与流动的NH3反应20 min合成了GaN微晶。用X射线衍射(XRD)、扫描电子显微镜(SEM)、选择区电子衍射(SAED)对微晶进行结构、形貌的分析,特别是对两种不同途径合成GaN微晶的XRD进行了分析比较。结果表明,当Ga源温度为950℃时两种不同的合成途径均可得到六方纤锌矿结构的GaN单晶颗粒,在氮化温度为850℃和900℃时,利用Ga2O3粉末作为Ga源,仅有少量的Ga2O3转变为GaN;而采用Ga2O3凝胶作为Ga源,在相同的温度下,大部分凝胶经过高温氨化反应均可转化为GaN。     

钠化焙烧钒渣同时加碳氯化挥发镓的研究

考察了低温400℃和中温800℃条件下,添加活性碳及液体含碳物纸浆与钒渣、NaCl和Na_2CO_3混合焙烧时氯化挥发镓及钒转比为水溶性钒的情况。本实验得到的最高η_(Ga)为35.1％。焙烧料中不含Na_2CO_3和焙烧温度为400℃时,钒转比为水溶性钒的比率(ηv.t)较低。纸浆添加比L_(纸浆)为0.05mL/g、配料比W_(Na_2CO_3)/W_(Nacl)=2时,可望同时得到较高的η_(Ga)和(ηv.t)。     

Effect of bismuth replacement at barium site in Y-Ba-Cu-O system

X-ray diffraction, electron paramagnetic resonance, microwave absorption and resistivity measurements were carried out on YBa_2−x Bi _x Cu₃O₇ (0≤x≤0·5) superconductors in order to study the effect of bismuth on the structural and superconducting properties. A decrease in sintering temperature increased the amount of impurity phase. Transition from an orthorhombic (superconducting) phase to tetragonal structure produced no significant change in EPR zero-field signal at liquid nitrogen temperature (LNT). The non-resonance signal height decreased on higher concentration of bismuth. Sintered YBa_2−x Bi _x Cu₃O₇ superconductor had a strong EPR zero-field signal at LNT. We have evaluated particle size from XRD and EPR studies. The average particle size was about 0·4μm.     

电炉钢外来夹杂控制的研究

介绍了夹杂物的来源,包括内生夹杂和外来夹杂,着重于二次氧化产物、卷渣、内衬侵蚀.同时介绍了鄂钢电炉厂在冶炼和连铸过程中控制夹杂物的操作实践.     

从水淬渣中回收镓的试验研究

对鼓风炉（ISP法）或烟化炉水淬渣中回收镓的工艺进行了研究。结果表明，利用浓硫酸恒温熟化的独特浸出工艺，克服硅对液固分离的影响；以伯胺N9123作为萃取剂在硫酸介质中萃取镓；获得了含镓品位为2.82%的富集物。     

Optical and electrical characterization of fluorine doped cadmium oxide thin films prepared by the sol-gel method

Highly transparent and conducting fluorine (F) doped cadmium oxide (CdO) thin films were deposited on glass slides by the sol-gel method. The films were doped by the addition of ammonium fluoride to the precursor solution whose optimum concentration was determined. The films were fired in an open atmosphere at 350 °C and after that, exposed to annealing treatments in different atmospheres (N₂, N₂/H₂ mixture and Ar) at the same temperature. The films were characterized by ultraviolet-visible spectroscopy, X‐ray diffraction and scanning electron microscopy. The resistivity was determined by the four probes method and current-voltage measurements in accordance with the standard Van der Pauw configuration. The CdO:F thin films obtained, showed high polycrystalline quality and high transmission in the visible region (≥ 90%), shifting towards the blue region of the absorption edge as the fluorine concentration in the precursor solution was increased from 0 to 30 at.%. The lowest resistivity values were reached for the samples with F content higher or equal to 5% and annealed in either N₂ or a 96/4 N₂/H₂ gas mixture. Our resistivity value reached in the CdO:F layers was 4.5 × 10^{− 4} Ω cm (20 Ω/square).     

新型压电晶体La3Ga5SiO14的生长及特性

用提拉法成功地生长了La3Ga5SiO14(LGS)单晶,用X-ray粉末衍射证明了其单晶结构,测得沿Y、Z方向的热膨胀系数分别为5×10-6 K-1、3.8×10-6 K-1,在453.15 K时测得晶体的比热为0.90 J/g*K,并在200～ 800 nm之间测其透过谱,测得了其全部压电及弹性常数.     

含杂质流体的流量测量

结合工程实例.介绍了几种实用的含杂质流体的流量测量方案,供自动化仪表设计及维堆护人员参考。     

催化裂化干气回收乙烯用于制备环氧乙烷的研究

叙述了在YS型银催化剂作用下，利用催化裂化干气回收的乙烯制备环氧乙烷的实验研究。结果表明：在银催化剂上催化氧化生成环氧乙烷的过程中，使用回收的乙烯，催化剂的初选择性可达80％；在保持环氧乙烷时空产率不变，经过2000h催化剂稳定性试验后，选择性下降了3—4个百分点，反应温度上升约10℃，与用聚合级乙烯为原料进行比较，催化剂初选择性低2—3个百分点、稳定性略差。该结果为用回收乙烯生产环氧乙烷提供了试验依据。     

钠化焙烧钒渣时氯化挥发镓的热力学分析

本文讨论了６００～１２００Ｋ范围内使用ＮａＣｌ作为添加剂焙烧钒渣时氯化发镓的热力可靠性。结论是：氯氧比的大小与溶性钒酸钠生成有直接联系，ＮａＣｌ和Ｎａ２Ｏ。Ｖ２Ｏ５平衡时的氯氧比最大；在氯化钠作用下，镓主要生成ＧａＣｌ３挥发，计算得到的ＧａＣｌ３的生成压相当大。