Morphological study of thin films: Simulation and experimental insights using horizontal visibility graph

We studied the morphological nature of various thin films such as silicon carbide (SiC), diamond (C), germanium (Ge), and gallium nitride (GaN) on silicon substrate Si(100) using the pulsed laser deposition (PLD) method and Monte Carlo simulation. We, for the first time, systematically employed the visibility algorithm graph to meticulously study the morphological features of various PLD grown thin films. These thin-film morphologies are investigated using random distribution, Gaussian distribution, patterned heights, etc. The nature of the interfacial height of individual surfaces is examined by a horizontal visibility graph (HVG). It demonstrates that the continuous interfacial height of the silicon carbide, diamond, germanium, and gallium nitride films are attributed to random distribution and Gaussian distribution in thin films. However, discrete peaks are obtained in the brush and step-like morphology of germanium thin films. Further, we have experimentally verified the morphological nature of simulated silicon carbide, diamond, germanium, and gallium nitride thin films were grown on Si(100) substrate by pulsed laser deposition (PLD) at elevated temperature. Various characterization techniques have been used to study the morphological, and electrical properties which confirmed the different nature of the deposited films on the Silicon substrate. Decent hysteresis behavior has been confirmed by current-voltage (IV) measurement in all the four deposited films. The highest current has been measured for GaN at ～60 nA and the lowest current in SiC at ～30 nA level which is quite low comparing with the expected signal level (μA). The HVG technique is suitable to understand surface features of thin films which are substantially advantageous for the energy devices, detectors, optoelectronic devices operating at high temperatures.     

A PV installation framework concerning electricity variable rates

This paper assesses building integrated photovoltaic (BIPV) installation parameters based on the profit generated by a photovoltaic system. It takes into consideration a home building case study and it investigates its monthly energy demand based on a specific location and a typical occupancy. The capability of a photovoltaic (PV) system to generate more profit occurs when solar intensity is maximum while the electric energy price is at its highest rate. The paper traces a framework that encompasses different aspects such as energy demand, energy price, and solar intensity. This framework identifies profit alternatives according to different installation parameters. A tool that predicts a PV installation hourly electric energy production is developed. The profit generated is simulated for home buildings located in Beirut (Lebanon) and Xihua (China), both at 33.8° latitude north. The paper highlights a new approach for BIPV installations, taking into account weather conditions, energy demand, and electric energy utility rates.     

北斗三星无源定位技术

介绍了北斗双星定位系统的特点、功能、系统组成和工作原理,说明了北斗有源定位方式在应用方面的局限性。针对北斗有源定位方式不能无线电静默,和人们对具有无线电隐蔽性的卫星定位的需求,详细介绍一种北斗三星无源定位技术:包括工作原理、实现方法、定位精度分析和目前达到的定位精度。阐述了北斗三星无源定位技术的优点和应用形势。     

几种管道补偿器的选择和安装

介绍了几种常用的管道补偿器，如自然补偿器、Ⅱ形补偿器、波纹补偿器和套管式补偿器及其优缺点和选用原则，并就补偿器的安装问题进行了探讨。     

试论循环水装置的经济性及其成本分析

通过对循环水装置的投资和成本分析，阐述了建设该装置的经济性和社会意义。     

GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition

In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky rectifiers grown on both sapphire and SiC substrates by metal-organic chemical-vapor deposition. For GaN p-i-n rectifiers grown on SiC with a relatively thin “i” region of 2 μm, a breakdown voltage over 400 V, and forward voltage as low as 4.5 V at 100 A/cm² are exhibited for a 60-μm-diameter device. A GaN Schottky diode with a 2-μm-thick undoped layer exhibits a blocking voltage in excess of ∼230 V at a reverse-leakage current density below 1 mA/cm², and a forward-voltage drop of 3.5 V at a current density of 100 A/cm². It has been found that with the same device structure and process approach, the leakage current of a device grown on a SiC substrate is much lower than a device grown on a sapphire substrate. The use of Mg ion implantation for p-guard rings as planar-edge terminations in mesageometry GaN Schottky rectifiers has also been studied.     

Electrical and growth characteristics of Au/Al0.15Ga0.85N:Si structures with various Si incorporations

We have investigated the growth characteristics of n-Al_0.15Ga_0.85N:Si/GaN and the electronic properties of Au/n-Al_0.15Ga_0.85N:Si diode structures grown by metal-organic chemical vapor deposition (MOCVD) with various Si incorporations. The Al_0.15Ga_0.85N:Si layers were grown on undoped GaN/sapphire (0001) epitaxial layers in a horizontal MOCVD reactor at the reduced pressure of 300 torr. The mirrorlike surface, free of defects, such as cracks or hillocks, can be seen in the undoped Al_0.15Ga_0.85N epilayer, which was grown without any intentional flow of SiH₄. However, many cracks are observed in the n-Al_0.15Ga_0.85N:Si, which was grown with Si incorporation above 1.0 nmol/min. While Au/n-Al_0.15Ga_0.85N:Si diodes having low incorporation of Si showed retively good rectifying behavior, the samples having high Si incorporation exhibited leaky current-voltage (I-V) behavior. Particularly, the Au/n-Al_0.15Ga_0.85N:Si structure grown with Si incorporation above 1.0 nmol/min cannot be used for electrical rectification. Both added tunneling components and thermionic emission influence the current transport at the Au/n-Al_0.15Ga_0.85N:Si barrier when Si incorporation becomes higher.     

古洞口水利水电工程泄洪洞工作弧门安装工艺

介绍了古洞口工程泄洪洞工作弧门在特定地形下采用固定卷扬式启闭机和汽车吊配合闸室的预埋件进行闸门安装的施工工艺。对闸门的吊装、调整及焊接工艺的具体措施作了详细分析,解决了该工作弧门在洞内安装的关键施工技术问题。     

KZON-50/120空分设备的安装调试及设计改造

在KZON-50/120空分设备的安装调试和试运行过程中,对其机械和电器部分进行了多处改造,克服了原设计中存在的不足之处。改造后,机械和电器性能更加趋于合理,操作简单,便于维护,降低了制气费用,提高了制气纯度和经济效益,保证了空分设备更加安全可靠运行。     

板栅模具设计中的几个问题

通过对板栅模具设计中遇到的几个实际问题的分析提出处理意见 ,从而达到科学合理地设计板栅模具。