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排序方式: 共有4147条查询结果,搜索用时 140 毫秒
1.
In a typical embedded CPU, large on-chip storage is critical to meet high performance requirements. However, the fast increasing size of the on-chip storage based on traditional SRAM cells makes the area cost and energy consumption unsustainable for future embedded applications. Replacing SRAM with DRAM on the CPU’s chip is generally considered not worthwhile because DRAM is not compatible with the common CMOS logic and requires additional processing steps beyond what is required for CMOS. However a special DRAM technology, Gain-Cell embedded-DRAM (GC-eDRAM) [1], [2], [3] is logic compatible and retains some of the good properties of DRAM (small and low power). In this paper we evaluate the performance of a novel hybrid cache memory where the data array, generally populated with SRAM cells, is replaced with GC-eDRAM cells while the tag array continues to use SRAM cells. Our evaluation of this cache demonstrates that, compared to the conventional SRAM-based designs, our novel architecture exhibits comparable performance with less energy consumption and smaller silicon area, enabling the sustainable on-chip storage scaling for future embedded CPUs. 相似文献
2.
This paper focuses on the design of a 2.3–21 GHz Distributed Low Noise Amplifier (LNA) with low noise figure (NF), high gain (S21), and high linearity (IIP3) for broadband applications. This distributed amplifier (DA) includes S/C/X/Ku/K-band, which makes it very suitable for heterodyne receivers. The proposed DA uses a 0.18 μm GaAs pHEMT process (OMMIC ED02AH) in cascade architecture with lines adaptation and equalization of phase velocity techniques, to absorb their parasitic capacitances into the gate and drain transmission lines in order to achieve wide bandwidth and to enhance gain and linearity. The proposed broadband DA achieved an excellent gain in the flatness of 13.5 ± 0.2 dB, a low noise figure of 3.44 ± 1.12 dB, and a small group delay variation of ±19.721 ps over the range of 2.3–21 GHz. The input and output reflection coefficients S11 and S22 are less than −10 dB. The input compression point (P1dB) and input third-order intercept point (IIP3) are −1.5 dBm and 11.5 dBm, respectively at 13 GHz. The dissipated power is 282 mW and the core layout size is 2.2 × 0.8 mm2. 相似文献
3.
Steganography is the science of hiding secret message in an appropriate digital multimedia in such a way that the existence of the embedded message should be invisible to anyone apart from the sender or the intended recipient. This paper presents an irreversible scheme for hiding a secret image in the cover image that is able to improve both the visual quality and the security of the stego-image while still providing a large embedding capacity. This is achieved by a hybrid steganography scheme incorporates Noise Visibility Function (NVF) and an optimal chaotic based encryption scheme. In the embedding process, first to reduce the image distortion and to increase the embedding capacity, the payload of each region of the cover image is determined dynamically according to NVF. NVF analyzes the local image properties to identify the complex areas where more secret bits should be embedded. This ensures to maintain a high visual quality of the stego-image as well as a large embedding capacity. Second, the security of the secret image is brought about by an optimal chaotic based encryption scheme to transform the secret image into an encrypted image. Third, the optimal chaotic based encryption scheme is achieved by using a hybrid optimization of Particle Swarm Optimization (PSO) and Genetic Algorithm (GA) which is allowing us to find an optimal secret key. The optimal secret key is able to encrypt the secret image so as the rate of changes after embedding process be decreased which results in increasing the quality of the stego-image. In the extracting process, the secret image can be extracted from the stego-image losslessly without referring to the original cover image. The experimental results confirm that the proposed scheme not only has the ability to achieve a good trade-off between the payload and the stego-image quality, but also can resist against the statistics and image processing attacks. 相似文献
4.
针对传统的小区内开环功率控制算法通常以提升本小区的吞吐量性能为目标,忽略了当前小区用户对邻小区用户同频干扰的问题,为提升边缘用户性能的同时兼顾系统整体性能,提出了一种LTE系统小区间上行联合功率控制(UJPC)算法。该算法采用单基站三扇区为系统模型,以最优化系统吞吐量比例公平函数为目标,首先根据最小信干噪比(SINR)约束值和用户最大发射功率这两个约束条件得到相应的数学优化模型,然后采用连续凸近似的方法求解优化问题得出各个基站所管辖的小区内所有用户的最优发射功率。仿真结果表明,与基准的开环功控方案相比,联合功控方案在保证系统平均频谱利用率的情况下能够较大幅度地提高小区边缘频谱利用率,其最佳性能增益能达到50%。 相似文献
5.
ABSTRACTThe RF output power dissipated per unit area is calculated using Runge-Kutta method for the high-moderate-moderate-high (n+-n-p-p+) doping profile of double drift region (DDR)-based impact avalanche transit time (IMPATT) diode by taking different substrate at Ka band. Those substrates are silicon, gallium arsenide, germanium, wurtzite gallium nitride, indium phosphide and 4H-silicon carbide. A comparative study regarding power dissipation ability by the IMPATT using different material is being presented thereby modelling the DDR IMPATT diode in a one-dimensional structure. The IMPATT based on 4H-SiC element has highest power density in the order of 1010 Wm?2 and the Si-based counterpart has lowest power density of order 106 Wm?2 throughout the Ka band. So, 4H-SiC-based IMPATT should be preferable over others for the power density preference based application. This result will be helpful to estimate the power density of the IMPATT for any doping profile and to select the proper element for the optimum design of the IMPATT as far as power density is concerned in the Ka band. Also, we have focused on variation of power density with different junction temperatures and modelled the heat sink with analysis of thermal resistances. 相似文献
6.
国产风机盘管空调系统常见问题分析 总被引:2,自引:1,他引:1
分析了国产风机盘管使用中常见的问题,指出机组因风量不足、冷量风量匹配不合理以及风机盘管某些设备故障,导致了风机盘管精度低、舒适性差、能耗高等一系列问题。指出应引起空调设计和运行维护人员的注意。 相似文献
7.
光电设备电子机柜布线工艺研究 总被引:5,自引:0,他引:5
作为信号和电能载体的导线,同时也是噪声的载体和外来噪声侵入设备的媒体。描述了噪声通过导线侵入设备内部的方式,通过降低噪声的途径确定了机柜布线的原则,介绍了布线的要求和方法,最后提出了用布线槽布线的建议。 相似文献
8.
A. I. D’Souza M. G. Stapelbroek P. N. Dolan P. S. Wijewarnasuriya R. E. DeWames D. S. Smith J. C. Ehlert 《Journal of Electronic Materials》2003,32(7):633-638
The 1/f noise in photovoltaic (PV) molecular-beam epitaxy (MBE)-grown Hg1−xCdxTe double-layer planar heterostructure (DLPH) large-area detectors is a critical noise component with the potential to limit
sensitivity of the cross-track infrared sounder (CrIS) instrument. Therefore, an understanding of the origins and mechanisms
of noise currents in these PV detectors is of great importance. Excess low-frequency noise has been measured on a number of
1000-μm-diameter active-area detectors of varying “quality” (i.e., having a wide range of I-V characteristics at 78 K). The
1/f noise was measured as a function of cut-off wavelength under illuminated conditions. For short-wave infrared (SWIR) detectors
at 98 K, minimal 1/f noise was measured when the total current was dominated by diffusion with white noise spectral density
in the mid-10−15A/Hz1/2 range. For SWIR detectors dominated by other than diffusion current, the ratio, α, of the noise current in unit bandwidth
in(f = 1 Hz, Vd = −60 mV, and Δf = 1 Hz) to dark current Id(Vd = −60 mV) was αSW-d = in/Id ∼ 1 × 10−3. The SWIR detectors measured at 0 mV under illuminated conditions had median αSW-P = in/Iph ∼ 7 × 10−6. For mid-wave infrared (MWIR) detectors, αMW-d = in/Id ∼ 2 × 10−4, due to tunneling current contributions to the 1/f noise. Measurements on forty-nine 1000-μm-diameter MWIR detectors under
illuminated conditions at 98 K and −60 mV bias resulted in αMW-P = in/Iph = 4.16 ± 1.69 × 10−6. A significant point to note is that the photo-induced noise spectra are nearly identical at 0 mV and 100 mV reverse bias,
with a noise-current-to-photocurrent ratio, αMW-P, in the mid 10−6 range. For long-wave infrared (LWIR) detectors measured at 78 K, the ratio, αLW-d = in/Id ∼ 6 × 10−6, for the best performers. The majority of the LWIR detectors exhibited αLW-d on the order of 2 × 10−5. The photo-induced 1/f noise had αLW-P = in/Iph ∼ 5 × 10−6. The value of the noise-current-to-dark-current ratio, α appears to increase with increasing bandgap. It is not clear if
this is due to different current mechanisms impacting 1/f noise performance. Measurements on detectors of different bandgaps
are needed at temperatures where diffusion current is the dominant current. Excess low-frequency noise measurements made as
a function of detector reverse bias indicate 1/f noise may result primarily from the dominant current mechanism at each particular
bias. The 1/f noise was not a direct function of the applied bias. 相似文献
9.
Nonlinear Propagation of Coupling Optical Pulse under Compton Scattering in Laser Medium 总被引:1,自引:1,他引:0
HAO Dong-shan ZHANG Xiao-fu 《半导体光子学与技术》2006,12(3):178-183,204
After considering Kerr nonlinear effect,group velocity dispersion of host and gain distribution of active particle in laser amplifying medium,a basic equation describing propagation of the coupling optical pulse under the multi-photon nonlinear Compton scattering in the laser amplifying medium has been deduced. Besides,the profile and power spectrum of a picosecond-level super-Gaussian coupling pulse in the laser amplifying medium have been discussed when its central frequency coincides with the gain peak frequency of the laser amplifying medium. 相似文献
10.
Modeling ion implantation of HgCdTe 总被引:2,自引:0,他引:2
H. G. Robinson D. H. Mao B. L. Williams S. Holander-Gleixner J. E. Yu C. R. Helms 《Journal of Electronic Materials》1996,25(8):1336-1340
Ion implantation of boron is used to create n on p photodiodes in vacancy-doped mercury cadmium telluride (MC.T). The junction
is formed by Hg interstitials from the implant damage region diffusing into the MC.T and annihilating Hg vacancies. The resultant
doping profile is n+/n-/p, where the n+ region is near the surface and roughly coincides with the implant damage, the n- region is where Hg vacancies have been annihilated revealing a residual grown-in donor, and the p region remains doped by
Hg vacancy double acceptors. We have recently developed a new process modeling tool for simulating junction formation in MC.T
by ion implantation. The interstitial source in the damage region is represented by stored interstitials whose distribution
depends on the implant dose. These interstitials are released into the bulk at a constant, user defined rate. Once released,
they diffuse away from the damage region and annihilate any Hg vacancies they encounter. In this paper, we present results
of simulations using this tool and show how it can be used to quantitatively analyze the effects of variations in processing
conditions, including implant dose, annealing temperature, and doping background. 相似文献