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1.
Besides entertainment, games have shown to have the potential to impact a broader variety of cognitive abilities. Research has consistently shown that several aspects in cognition such as visual short-memory, multitasking and spatial skills can be enhanced by game play. In a previous study, it was found that playing Monkey Tales, a game aimed at training arithmetic skills, helped second grade pupils to increase their accuracy in mental calculation as compared to paper exercises. In this follow up study we explore whether traditional methods and game training differ in terms of the cognitive processes that both are able to impact. We incorporated standardized measures of working memory and visuo-motor skills. Additionally, the mathematics game was modified and its contents extracted to allow precise comparison between the gaming and paper exercises condition. Thus each single math exercise, type of question (e.g., multiple choice), quantity and order was perfectly matched in the game training and the traditional training conditions. Gains in arithmetical performance, and self-reported measures of enjoyment were also investigated. We found some evidence suggesting that arithmetic performance enhancement induced by game play and paper exercises differ not only in terms of enjoyment but also of working memory capacity improvements.  相似文献   
2.
We investigated the resistive switching characteristics of a polystyrene:ZnO–graphene quantum dots system and its potential application in a one diode-one resistor architecture of an organic memory cell. The log–log IV plot and the temperature-variable IV measurements revealed that the switching mechanism in a low-current state is closely related to thermally activated transport. The turn-on process was induced by a space-charge-limited current mechanism resulted from the ZnO–graphene quantum dots acting as charge trap sites, and charge transfer through filamentary path. The memory device with a diode presented a ∼103 ION/IOFF ratio, stable endurance cycles (102 cycles) and retention times (104 s), and uniform cell-to-cell switching. The one diode-one resistor architecture can effectively reduce cross-talk issue and realize a cross bar array as large as ∼3 kbit in the readout margin estimation. Furthermore, a specific word was encoded using the standard ASCII character code.  相似文献   
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4.
The non-equiatomic FeCoNiAlSi alloy is prepared by the Bridgman solidification (BS) technique at different withdrawal velocities (V = 30, 100, and 200 μm/s). Various characterization techniques have been used to study the microstructure and crystal orientation. The morphological evolutions accompanying the crystal growth of the alloy prepared at different withdrawal velocities are nearly the same, from equiaxed grains to columnar crystals. The transition of coercivity is closely related to the local microstructure, while the saturation magnetization changes little at different sites. The coercivity can be significantly reduced from the equiaxed grain area to the columnar crystal area when the applied magnetic field direction is parallel to the crystal growth direction, no matter what is the withdrawal velocity. In addition, the alloy possesses magnetic anisotropy when the applied magnetic field is in different directions.  相似文献   
5.
The eutectic 80Au/20Sn solder alloy is widely used in high power electronics and optoelectronics packaging. In this study, low cycle fatigue behavior of a eutectic 80Au/20Sn solder alloy is reported. The 80Au/20Sn solder shows a quasi-static fracture characteristic at high strain rates, and then gradually transforms from a transgranular fracture (dominated by fatigue damage) to intergranular fracture (dominated by creep damage) at low strain rates with increasing temperature. Coffin-Manson and Morrow models are proposed to evaluate the low cycle fatigue behavior of the 80Au/20Sn solder. Besides, the 80Au/20Sn solder has enhanced fatigue resistance compared to the 63Sn/37Pb solder.  相似文献   
6.
Fatigue crack growth behaviour of Ti–6Al–2Zr–1.5Mo–1.5V (VT-20 a near-α Ti alloy) was studied in lamellar, bimodal and acicular microstructural conditions. Fatigue crack growth tests at both increasing and decreasing stress intensity factor range values were performed at ambient temperature and a loading ratio of 0.3 using compact tension samples. Lamellar and acicular microstructures showed lower fatigue crack growth rates as compared to the bimodal microstructure due to the tortuous nature of cracks in the former and the cleavage of primary α in the latter. The threshold stress intensity factor range was highest for acicular microstructure.  相似文献   
7.
The applicability of the identical elements (IE) model of arithmetic fact retrieval (T. C. Rickard, A. F. Healy, & L. E. Bourne, 1994) to cued recall from episodic (image and sentence) memory was explored in 3 transfer experiments. In agreement with results from arithmetic, speedup following even minimal practice recalling a missing word from an episodically bound word triplet did not transfer positively to other cued recall items involving the same triplet. The shape of the learning curve further supported a shift from episode-based to IE-based recall, extending some models of skill learning to cued recall practice. In contrast with previous findings, these results indicate that a form of representation that is independent of the original episodic memory underlies cued-recall performance following minimal practice. (PsycINFO Database Record (c) 2010 APA, all rights reserved)  相似文献   
8.
应用静态吸附、动态吸附、程序升温脱附和程序升温还原等实验方法,考察了噻吩在Ni基非晶态合金上的吸附和脱附行为。常温下,噻吩分子首先吸附在清洁的Ni表面,并立刻被活化,发生氢解反应,C-S键断裂,释放出烃类部分,S留在Ni原子上。噻吩可以在Ni基非晶态合金表面发生强度不同的化学吸附。弱化学吸附的噻吩可以脱附;强化学吸附的噻吩不会脱附,而在高温下发生氢解反应。  相似文献   
9.
不锈钢管道坡口加工的新方法   总被引:1,自引:1,他引:0  
对于不锈钢管及合金钢管坡口的加工,采用以往的加工方法切割出来的坡口一般参差不平、比较粗糙,难于打磨平整。使用LGK空气等离子切割机和磁力管道切割机的组合加上一定的辅助手段,改善了不锈钢管及合金钢管的坡口加工效果,使加工出来的坡口像碳钢管一样平整,更加容易打磨组焊。文章介绍了这一新方法所用的设备、材料、切割原理以及操作过程。  相似文献   
10.
李强 《现代电子技术》2006,29(19):91-93
进入21世纪,随着集成电路的发展,SoC(System on Chip)片上系统应运而生。而作为SoC重要组成部分的嵌入式存储器,在SoC中所占的比重正逐步增加,并起着越来越重要的作用,那么嵌入式存储器与独立的存储器芯片在设计上存在着哪些差异?对此本文将以NOR型闪存为例在制造工艺的选取、衍生产品的设计、功耗与噪声、后端功能仿真、测试与修复等方面进行分析和研究。  相似文献   
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