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1.
Electrical resistivity, Seebeck coefficient, specific heat and thermal conductivity measurements on the Ti50−xNi50+x (x = 0.0–1.6 at.%) shape memory alloys are performed to investigate their thermal and transport properties. In this study, anomalous features are observed in both cooling and heating cycles in all measured physical properties of the slightly Ni-rich TiNi alloys (x ≤ 1.0), corresponds to the transformation between the B19′ martensite and B2 austenite phases. Besides, the transition temperature is found to decrease gradually with increasing Ni content, and the driving force for the transition is also found to diminish slowly with the addition of excess Ni, as revealed by specific heat measurements. While the signature of martensitic transformation vanishes for the Ni-rich TiNi alloys with x ≥ 1.3, the characteristics of strain glass transition start to appear. The Seebeck coefficients of these TiNi alloys were found to be positive, suggesting the hole-type carriers dominate the thermoelectric transport. From the high-temperature Seebeck coefficients, the estimated value of Fermi energy ranges from ∼1.5 eV (Ti48.4Ni51.6) to ∼2.1 eV (Ti50Ni50), indicating the metallic nature of these alloys. In addition, the thermal conductivity of the slightly Ni-rich TiNi alloys with x ≤ 1.0 shows a distinct anomalous feature at the B19′ → B2 transition, likely due to the variation in lattice thermal conductivity.  相似文献   
2.
Numerical simulation, using SILVACO-TCAD, is carried out to explain experimentally observed effects of different types of deep levels on the capacitance–voltage characteristics of p-type Si-doped GaAs Schottky diodes grown on high index GaAs substrates. Two diodes were grown on (311)A and (211)A oriented GaAs substrates using Molecular Beam Epitaxy (MBE). Although, deep levels were observed in both structures, the measured capacitance–voltage characteristics show a negative differential capacitance (NDC) for the (311)A diodes, while the (211)A devices display a usual behaviour. The NDC is related to the nature and spatial distribution of the deep levels, which are characterized by the Deep Level Transient Spectroscopy (DLTS) technique. In the (311)A structure only majority deep levels (hole traps) were observed while both majority and minority deep levels were present in the (211)A diodes. The simulation, which calculates the capacitance–voltage characteristics in the absence and presence of different types of deep levels, agrees well with the experimentally observed behaviour.  相似文献   
3.
陶瓷及陶瓷基复合材料微缺陷的超声检测   总被引:4,自引:0,他引:4  
为研究陶瓷及陶瓷基复合材料微缺陷的超声检测能力,针对一些人工缺陷试样进行了超声检测试验。试验主要采用了纵波垂直入射法和泄漏瑞利波法。通过试验结果,比较了两种方法的检测能力。  相似文献   
4.
1Introduction Reconstructivesurgeryisoneofthehottestre searchedsubjectsthatdealingwithbonedefects.Thetra ditionalmethodisimplantationoffreshautograftbonebe causeofitsnon immunoreactiveproperty.Butautologousbonewasnotabundantinsomecases.Sowefoundbeta trica…  相似文献   
5.
廉红霞  陈怀耀 《山西建筑》2003,29(17):36-37
就毛石砌体的拉接处理、现浇混凝土柱、墙拉结筋的留设、砖混结构中构造柱的质量预控等几个环节进行了分析,提出只有在施工中采取必要的措施,才能保证施工质量。  相似文献   
6.
用正电子湮没方法研究了新型超微晶软磁合金的微观结构缺陷,样品选用的是在不同温度下退火的Fe81P12C3Cu1Mo0.5Si2.5合金,结果表明,合金的微观结构构陷大小,密度随退火温度有规律地变化,这种现象可能与非晶的晶化过程有关。  相似文献   
7.
Packaging engineers need to be able to accurately determine the forces present in the shipping environment in order to protect packaged goods. The purpose of this study was to determine the vertical vibration levels measured in three separate truck-trailer suspension systems; conventional leaf-spring, conventional air-ride and damaged air-ride. The main conclusion reached in this study is that the air-ride suspension when maintained gives lower power density (PD) levels on all road surfaces studied. A damaged air-ride suspension and leaf-spring suspension are very similar in response frequencies, although the damaged air-ride produces higher vibration levels at lower frequencies.  相似文献   
8.
The GaSb layers investigated were grown directly on GaAs substrates by molecular beam epitaxy (MBE) using SnTe source as the n-type dopant. By using admittance spectroscopy, a dominant deep level with the activation energy of 0.23-0.26 eV was observed and its concentration was affected by the Sb4/Ga flux ratio in the MBE growth. A lowest deep-level concentration together with a highest mobility was obtained for GaSb grown at 550°C under a Sb4/Ga beam equivalent pressure (BEP) ratio around 7, which should correspond to the lowest ratio to maintain a Sb-stabilized surface reconstruction. In the Hall measurement, an analysis of the temperature-dependent mobility shows that the ionized impurity concentration increases proportionally with the sample’s donor concentration, suggesting that the ionized impurity was introduced by an SnTe source. In addition, optical properties of an undoped p-, a lightly and heavily SnTe-doped GaSb layers were studied by comparing their photoluminescence spectra at 4.5K.  相似文献   
9.
曹秀中 《锻压技术》2007,32(2):19-22
针对汽车锻件拉杆固定支架在生产过程中产生的裂纹、折叠、表面脱碳等多种形式缺陷,从锻件生产工艺过程的各工序来分析其可能产生的缺陷,并重点就裂纹、折叠、表面脱碳等缺陷产生的原因及其解决方法进行探讨,从而进一步完善生产工艺,改善锻件质量.  相似文献   
10.
张林成 《人民长江》2001,32(12):9-11
安徽省境内765km的长江干堤,由于均是在原来旧堤的基础上经逐年加高培厚的,修筑时均未按设计要求施工,致使堤身密实度不够,新老堤土之间结合不牢,在汛期高水位时易产生渗漏。20世纪70年代以来,安徽省高度重视对长江干堤渗漏隐患的处理,经过长期的实践,逐渐摸索出一套行之有效的除险加固方法,如锥探灌浆、灭杀白蚁、冲抓套吉、垂直铺塑防渗、粘土铺盖及压渗盖重等处理措施。使长江干堤的渗漏隐患得以基本消除,其具体作法可供类似工程借鉴。  相似文献   
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