Isolation of antimicrobial agent from the marine algae Cystoseira hakodatensis

Cystoseira hakodatensis is an unutilised brown algae belonging to family Sargassaceae. A crude methanol extract from the algae showed inhibitory effects on the growths of Bacillus cereus and Bacillus licheniformis. To isolate the major antimicrobial agent, a sequential active‐guided isolation procedure was applied: liquid–liquid extraction, column chromatography and bio‐autography. A marked antimicrobial agent (active α) was isolated in hydrophobic fraction and was determined to phenolics without carbohydrates and proteins by phytochemical test. Regarding the antimicrobial potential, the isolated active α showed better inhibitory effects against B. cereus and B. licheniformis at 2 and 4 times of lower concentrations (62.5 and 31.3 μg mL^?1) in comparison with epigallocatechin gallate. These results showed that C. hakodatensis is a potential source of antimicrobial agent capable of preventing the growth of the two bacteria.     

油页岩矿物质催化半焦燃烧特性及机理

利用微型流化床反应分析仪（MFBRA）研究了油页岩矿物质催化半焦燃烧特性，重点考察了半焦内部矿物质和外部页岩灰床料对半焦燃烧的催化作用，揭示了流化床反应器中半焦燃烧过程和机理。结果表明：内部矿物质和外部床料对半焦燃烧均具有明显催化作用，而两者共同催化效果最为显著。矿物质中CaO和Fe₂O₃对半焦燃烧具有催化活性，CaO催化作用强于Fe₂O₃。油页岩半焦燃烧反应活化能在60.41~78.97 kJ/mol之间，矿物质的催化作用会明显降低反应活化能。流化床反应器中，矿物质对半焦燃烧的催化作用主要表现在四个反应，即：挥发分裂解和燃烧、半焦表面炭燃烧、半焦内部炭燃烧以及一氧化碳燃烧。     

多元合金化大断面球墨铸铁组织和性能的分析

为了提升大断面球墨铸铁综合力学性能，通过复合添加微量合金元素铜、锑、锡、钼对大断面球墨铸铁进行微合金化处理，借助金相显微镜(OM)、扫描电子显微镜(SEM)及力学性能测试等手段，研究了Cu Sb Sn Mo复合微合金化大断面球墨铸铁微观组织和力学性能。结果表明，试验球墨铸铁具有良好的综合力学性能。大断面球墨铸铁中添加铜、锑、锡、钼后优化了材料的组织结构，基体组织为珠光体＋少量牛眼状铁素体；试样石墨组织细小、圆整，分布均匀。同时，合金元素的复合加入使得其抗拉强度达到800 MPa以上，硬度约为280HB，伸长率达到5%以上。拉伸断口分析表明，微合金化大断面球墨铸铁断裂模式以解理断裂为主，伴有少量的塑性变形。     

GIS气体高压开关在阳煤五矿变电站的应用

针对阳煤五矿广场变电站的高压开关老化问题,为了保证安全性,采用了GIS气体的高压绝缘开关进行了改造。在改造后,变电站的安全性得到了显著提高,设备运行可以节省成本200多万元。     

Compiler compatible 5.66 Mb/mm2 8T 1R1W register file in 14 nm FinFET technology

1-read/1-write (1R1W) register file (RF) is a popular memory configuration in modern feature rich SoCs requiring significant amount of embedded memory. A memory compiler is constructed using the 8T RF bitcell spanning a range of instances from 32 b to 72 Kb. An 8T low-leakage bitcell of 0.106 μm² is used in a 14 nm FinFET technology with a 70 nm contacted gate pitch for high-density (HD) two-port (TP) RF memory compiler which achieves 5.66 Mb/mm² array density for a 72 Kb array which is the highest reported density in 14 nm FinFET technology. The density improvement is achieved by using techniques such as leaf-cell optimization (eliminating transistors), better architectural planning, top level connectivity through leaf-cell abutment and minimizing the number of unique leaf-cells. These techniques are fully compatible with memory compiler usage over the required span. Leakage power is minimized by using power-switches without degrading the density mentioned above. Self-induced supply voltage collapse technique is applied for write and a four stack static keeper is used for read Vmin improvement. Fabricated test chips using 14 nm process have demonstrated 2.33 GHz performance at 1.1 V/25 °C operation. Overall V_min of 550 mV is achieved with this design at 25 °C. The inbuilt power-switch improves leakage power by 12x in simulation. Approximately 8% die area of a leading 14 nm SoC in commercialization is occupied by these compiled RF instances.     

Small‐Sized High‐Power PIN Diode Switch with Defected Ground Structure for Wireless Broadband Internet

This letter presents a small‐sized, high‐power single‐pole double‐throw (SPDT) switch with defected ground structure (DGS) for wireless broadband Internet application. To reduce the circuit size by using a slow‐wave characteristic, the DGS is used for the quarter‐wave (°/4) transmission line of the switch. To secure a high degree of isolation, the switch with DGS is composed of shunt‐connected PIN diodes. It shows an insertion loss of 0.8 dB, an isolation of 50 dB or more, and power capability of at least 50 W at 2.3 GHz. The switch shows very similar performance to the conventional shunt‐type switch, but the circuit size is reduced by about 50% simply with the use of DGS patterns.     

SOI光电子集成

SOI（Silicon-on-Insulator)光电子集成已成为十分引人注目的研究课题，其工艺与CMOS工艺完全兼容，可以实现低成本的SOI基整片集成光电子回路。本文综述了近几年来SOI集成光电子器件的发展以及一些最新的研究进展，着重分析几种最新型光无源器件的工作原理和结构，包括SOI光波导、SOI光波导耦合器、SOI光波导开关、相位阵列波导光栅（PAWG）、基于SOI的光探测器等，并介绍了中国科学院半导体所集成光电子国家重点实验室的研究进展。     

宽带DDS跳频源设计

直接数字合成（DDS）简单可靠、控制方便，具有很高的频率分辨率，高速转换，非常适合快速跳频的要求。在对DDS基本原理进行了简要介绍和分析后，提出宽带跳频源设计方案。     

一个基于PE分层技术的电子政务网络平台

电子政务网络建设的主要目标就是建立一个开放的、基于标准的统一网络平台，并在该平台上实现政府不同部门之间的信息交换和资源共享，同时保证各部门信息的独立和安全。通过介绍电子政务网络建设中的主流技术——MPLSVPN，提出了一种基于该技术原理的PE分层技术，详细讨论了基于该分层技术的电子政务网络平台的实现过程和主要技术，并对其性能参数进行了测试与分析。