Computational Implementation of Asymmetric Integral Imaging by Use of Two Crossed Lenticular Sheets

We propose an asymmetric integral imaging method to adjust the resolution and depth of a three‐dimensional image. Our method is obtained by use of two lenticular sheets with different pitches fabricated under the same F/#. The asymmetric integral imaging is the generalized version of integral imaging, including both conventional integral imaging and one‐dimensional integral imaging. We present experimental results to test and verify the performance of our method computationally.     

Parathion degradation and toxicity reduction in solar photocatalysis and photolysis.

The solar photocatalytic degradation of methyl parathion was investigated using a circulating TiO2/solar light reactor. Under solar photocatalysis condition, parathion was more effectively degraded than solar photolysis and TiO2-only conditions. With solar photocatalysis, 20 mg/L of parathion was completely degraded within 60 min with a TOC decrease of 63% after 150 min. The main ionic byproducts during photocatalysis recovered from parathion degradation were mainly as NO3-, NO2- and NH4+, 80% of the sulphur as SO4(2-), and 5% of phosphorus as PO4(3-). The organic intermediates 4-nitrophenol and methyl paraoxon were also identified, and these were further degraded in solar photocatalytic condition. Two different bioassays (Vibrio fischeri and Daphnia magna) were used to test the acute toxicity of solutions treated by solar photocatalysis and photolysis. The Microtox test using V. fischeri showed that the toxicity expressed as EC50 (%) value increased from 5.5% to >82% in solar photocatalysis, indicating that the treated solution is non-toxic, but only increased from 4.9 to 20.5% after 150 min in solar photolysis. The acute toxicity test using D. magna showed that EC50 (%) increased from 0.05 to 1.08% under solar photocatalysis, but only increased to 0.12% after 150 min with solar photolysis, indicating the solution is still toxic. The pattern of toxicity reduction parallels the decrease in TOC and the parathion concentrations.     

Fabrication and performance of parallel-addressed InGaN micro-LED arrays

High-performance, two-dimensional arrays of parallel-addressed InGaN blue micro-light-emitting diodes (LEDs) with individual element diameters of 8, 12, and 20 /spl mu/m, respectively, and overall dimensions 490 /spl times/490 /spl mu/m, have been fabricated. In order to overcome the difficulty of interconnecting multiple device elements with sufficient step-height coverage for contact metallization, a novel scheme involving the etching of sloped-sidewalls has been developed. The devices have current-voltage (I-V) characteristics approaching those of broad-area reference LEDs fabricated from the same wafer, and give comparable (3-mW) light output in the forward direction to the reference LEDs, despite much lower active area. The external efficiencies of the micro-LED arrays improve as the dimensions of the individual elements are scaled down. This is attributed to scattering at the etched sidewalls of in-plane propagating photons into the forward direction.     

共面转换液晶显示器中获得对比度高于1:600的新技术

薄膜晶体管液晶电视(TFT-LCD TV)因为具有薄、轻、紧凑和可随意放置的特点，已经占据了大部分电视机市场。除了这些物理特性以外，最重要的特性是已具有了良好像质的对比度。为了将对比度提高到1：600以上，对偏振片膜、背光源板、滤色片树脂、电极锥角和摩擦条件等都进行了研究。优化的背光板组合，光滑的电极锥角和摩擦方法的控制是提高对比度的主要控制因素。应用新开发的滤色片树脂，对获得高对比度最为有效。     

Thermo-acoustic instability in the horizontal Rijke tube

The instability curve of a Rijke tube system was obtained accurately by following different paths of heat power and flow-rate for three regions and by defining its locus from the criterion based on the measured sound pressure levels. The unstable limits in the region of flow-rate lower than that at the minimal power are compared with previous data. To observe the effect of turbulence on the unstable limits, inflow turbulence was introduced by placing a bundle of circular cylinders upstream of the heating part (50< Re_d< 700). The large-amplitude inflow fluctuation may delay the transition of the chamber acoustic mode to the unstable zone even at a sufficient power.     

A 24-GHz 3.9-dB NF low-noise amplifier using 0.18 /spl mu/m CMOS technology

A 24-GHz low-noise amplifier (LNA) was designed and fabricated in a standard 0.18-/spl mu/m CMOS technology. The LNA chip achieves a peak gain of 13.1 dB at 24 GHz and a minimum noise figure of 3.9 dB at 24.3 GHz. The supply voltage and supply current are 1 V and 14 mA, respectively. To the author's knowledge, this LNA demonstrates the lowest noise figure among the reported LNAs in standard CMOS processes above 20 GHz.     

A PIN diode controlled variable attenuator using a 0-dB branch-line coupler

We describe a simple PIN diode controlled variable attenuator that employs a 0-dB branch line directional coupler. The response of the attenuator was measured between 1.3 GHz and 2.6 GHz. At the center frequency, the attenuation monotonically varied from 0.7 dB to 23 dB with the control voltage, and the distributed branch-line coupler structure resulted in low input reflection. Our attenuator is easier to design, smaller in area than a double hybrid coupled attenuator, and has comparable or better reflection and attenuation performance characteristics.     

Structural properties of 0.65Pb(Mg1/3Nb2/3)O3–0.35PbTiO3 relaxor ferroelectric thin films on SrRuO3 conducting oxides

Coating of 0.65Pb(Mg_1/3Nb_2/3)O₃–0.35PbTiO₃ (PMN–PT) relaxor ferroelectrics by a sol–gel method is followed by growth of epitaxial SrRuO₃ (SRO) metallic oxide electrodes on SrTiO₃ (STO) single-crystal substrate by pulsed laser deposition. High-quality PMN–PT films on SRO with preferred growth orientation were successfully fabricated by controlling the operation parameters. Structural properties of relaxor ferroelectric PMN–PT thin films on SRO/STO substrates have been studied by X-ray diffraction (XRD), transmission electron microscopy (TEM) and atomic force microscopy (AFM). In-plane and out-of-plane alignments of the heterostructure are confirmed and the structural twinning of the materials are also revealed.     

Influence of the silicon surface treatment by plasma etching and scratching on the nucleation of diamond grown in HFCVD - a comparative study

A comparative study for the nucleation of diamond was carried out using surface treatment like (i) surface scratching with 1 μm diamond paste and (ii) surface etching using chlorine plasma at different RF powers (50, 100 and 150 W). Atomic force microscopic study shows variation in roughness from 31 nm to 110 nm. Scratching results in random scratches, whereas plasma etches a surface uniformly. Scanning electron microscopic observations show well faceted crystallites with a predominance of angular shaped grains corresponding to 〈100〉 and 〈110〉 crystallite surfaces for the scratched as well as plasma etched substrate. Surface etching at 150 W plasma power results in a better growth in comparison with 50 and 100 W plasma powers. Chlorine-radical is found responsible for the changes in the growth morphology. Raman spectroscopy shows a sharp peak at 1,332 cm⁻¹ and a peak at ∼1,580 cm⁻¹ for both samples.