一种智能化的键盘练习器

本文介绍了一个利用单片机研制的键盘操作练习器。它能完成健盘输入练习和输入水平测试二项功能。     

Studies on thermal fatigue in 3Cr2W8V die steel by positron lifetime and hardness measurements

Studies on thermal fatigue in 3Cr2W8V die steel have been carried out by using positron lifetime and microhardness measurements. It is found that the mean positron lifetime and the microhardness exhibit periodic up-and-down variations with an increase in the number of fatigue cycles. The experiments indicate that in the process of thermal fatigue there are two opposing effects on variation of defects: microdeformation and dynamic recovery and recrystallization.     

Preparation and optical properties of CdxHg1-xTe doped silica glass

In this paper, the Cd_xHg_1-xTe (x=1-0.7) doped silica glass was prepared through two step sol-gel process and in-situ growth technique from tetraethoxysilane (TEOS), cadmium acetate, mercury acetate and telluric acid. The influence of various factors on the glass was studied. The structure of the microcrystals was investigated by XRD. The absorption and transmittance spectrum of the composite showed that the shift of absorption edge was in conformity with the quantum size effect. The third-order nonlinear optical susceptibility χ⁽³⁾ was measured by the degenerate four wave mixing (DFWM). The values of χ⁽³⁾ was in the range of 10^-11-10^-12 MO esu at wavelength of 1.06 μm.     

关于瞬态应力强度因子和裂纹扩展加速度之间的关系探讨

将动态焦散线法与高速摄影技术相结合,本文记录了高分子材料悬臂梁内裂纹扩展加速、减速过程。一方面,利用动态焦散线可确定扩展裂尖的瞬态应力强度因子;另一方面,利用最小二乘法将裂纹扩展的水平、垂直位移分量拟合成时间(t)的四次多项式,描述了裂纹扩展方向、裂纹扩展加速度以及裂纹扩展加速度与动态应力强度因子的关系。结果表明:裂纹扩展加速度与动态应力强度因子之间存在一定的依赖关系;利用最小二乘法将裂纹扩展的水平、垂直分量拟合成时间(t)的四次多项式,可以对裂纹的扩展方向、加速度进行定量分析。     

从限额设计谈投资控制

文章根据设计阶段投资控制的现状及存在问题,提出只有在设计行业全面推行限额设计,深化设计阶段的投资控制工作,才能从根本上体现全过程投资控制的理念,提高投资控制效果,节约建设工程总投资。     

大规模集成电路浮栅ROM器件总剂量辐射效应

提出了一种大规模集成电路总剂量效应测试方法:在监测器件和电路功能参数的同时,监测器件功耗电流的变化情况,分析数据错误和器件功耗电流与辐射总剂量的关系.根据该方法利用60Co γ射线进行了浮栅ROM集成电路(AT29C256)总剂量辐照实验,研究了功耗电流和出错数量在不同γ射线剂量率辐照下的总剂量效应,以及参数失效与功能失效时间随辐射剂量率的变化关系,并利用外推实验技术预估了电路在空间低剂量率环境下的失效时间.     

一个适用于短沟HALO结构MOS器件的直接隧穿栅电流模型

对沟道长度从10μm到0.13μm,栅氧化层厚度为2.5nm的HALO结构nMOS器件的直接隧穿栅电流进行了研究,得到了一个适用于短沟道HALO结构MOS器件的直接隧穿栅电流模型.随着沟道尺寸的缩短,源/漏扩展区占据沟道的比例越来越大,源漏扩展区的影响不再可以忽略不计.文中考虑了源/漏扩展区对直接隧穿栅电流的影响,给出了适用于不同HALO掺杂剂量的超薄栅(2～4nm)短沟(0.13～0.25μm)nMOS器件的半经验直接隧穿栅电流模拟表达式.     

Structural trends and dielectric properties of Bi-based pyrochlores

The crystal structure and dielectric properties of Bi-based pyrochlore ceramics with formula Bi_1.5ZnM_1.5O₇ (M=Nb, Ta or Sb) were investigated. The three composition ceramics crystallize in the same pyrochlore structure, but the lattice parameters decrease with decreasing B-site ionic radius. Raman spectra analyses were performed to look for short-range structural differences and indicate that the Ta and Sb incorporation into B-site induce the A-site cations array to be more disordered. Ta or Sb replacing Nb lead to smaller dielectric constant and higher temperature coefficient values. The common characteristics for the three compositions are that they have rather low dielectric loss and high resistivity. The dielectric behavior with temperature for BZS and BZT samples were more flat than that of the BZN ceramics. Dielectric abnormal behavior at high temperature for all samples is typically associated with losses by conduction.     

构件重用技术在雷达软件中的应用

随着雷达软件系统技术的发展 ,软件规模、复杂度也越来越大 ,对开发、调试、功能升级等带来难度。文中提出了利用构件技术开发雷达软件系统的思想 ,并给出利用构件技术研制雷达软件系统的基本思路