面向对象中文窗口开发环境：C—VISION

Ｃ－ＶＩＳＩＯＮ中文窗口系统综合采用了面向对象与窗口环境设计的程序方法，彻底更新了在微机上进行中文窗口设计的编程思想，同时作为一个基础系统，为软件设计节约了大量的人力和时间，实现了微机程序的共享。     

最小生成树的高效异步并行算法

在ＭＩＭＤ－ＳＭ并行计算模型上，本文给出了时间复杂性为Ｏ（ｎ（ｎ／ｐ＋ｌｏｇｐ））的最小生成树的异步并行算法，其中ｎ，ｐ（１≤ｐ≤ｎ）分别表示图的顶点数和处理机的个数。     

Isolation of bacterial endotoxins from Pseudomonas putida 36 and Escherichia coli (vulgaris)

A prospective analysis of 69 patients who had been treated for nasopharyngeal carcinoma (NPC) by external radiotherapy was carried out. Biopsies from the posterior nasopharynx were performed and analyzed by in situ hybridization using an antisense Epstein-Barr Early RNA (EBER) radio-labelled riboprobe. None of the patients had evidence of disease in the nasopharynx. One patient was found to have nasopharyngeal carcinoma detected only by in situ hybridization. In the subsequent 18-month follow-up of these clinically- and biopsy-negative patients, only one patient developed relapse in the nasopharynx. In situ hybridization is a valuable tool for the detection of NPC and should be routinely available in histopathology laboratories where NPC is regularly diagnosed.     

PAA-PSF交联复合膜的制备及对低浓度有机醇水溶液反渗透分离性能研究

进行了ＰＡＡ（ＰｏｌｙａｃｒｙｌｉｃＡｃｉｄ）－ＰＳＦ（Ｐｏｌｙｓｕｌｆｏｎｅ）交联复合膜的制备，研究了交联剂、添加剂对膜性能的影响，并通过扫描电镜观察了膜的断面结构．研究了ＰＡＡ－ＰＳＦ交联复合膜对低浓度有机醇类水溶液反渗透分离性能．发现对于１０００×１０－６乙醇水溶液截留率达到６６．２％，透过流束可达０．９×１０－６（ｍ３·ｍ－２·ｓ－１）．随醇的分子量的增加，截留率不断上升，对戊醇的截留率达９４．３％，而透过流束则保持相对稳定．对不同结构醇类的分离性能研究表明，截留率存在有：ｔｅｒｔ－＞ｓｅｃ－＞ｉｓｏ－＞ｎ－的规律．     

蒙特卡罗方法在空间辐射制冷器理论分析及热设计计算中的应用

介绍了二级抛物面型辐射制冷器的热物理模型及用蒙特卡罗方法数值模拟解决其热流理论和辐射热耦合表面（漫发射、镜反射）辐射热交换的处理方法。     

光泵腔式NH3分子亚毫米波激光的调谐特性研究

通过求解量子系统的密度矩阵方程，计算了不同管长和不同输入输出功率反射系数的光泵腔式激光器对281um和90.4um的亚毫米波信号的调谐特性，给出了其调谐特性随信号波长λ，激光管长l和功率反射系数R的变化关系。     

DS18B20在大功率激光二极管恒温制冷系统中的应用

本文介绍了利用数字式温度传感器 ＤＳ１８Ｂ２０构造大功率激光二极管恒温制冷系统的方法．该系统利用ＤＳ１８Ｂ２０作为温度传感元件，单片机作为核心控制部件控制半导体制冷器对大功率激光二极管进行制冷和制热．该系统具有体积小、外围电路简单、温控精度高等特点，温控精度可达±０．１℃．     

VXI总线仪器自动计量校准系统的研究

VXI总线仪器由于其性能优越且软，硬件体系具有开放性，在航空，航天，电子通信，交运运输，军事等领域得到广泛的应用。作为一种自动测量设备，VXI总线仪器自身的计量校准也是必要的，不可回避的。本文结合作者的研究课题，阐述了进行VXI总线仪器校准的必要性和特殊性，分析比较了几种VXI总线仪器校准方案，组建了一套自动校准系统，论述了校准软件的结构及软件误差的控制措施，最后展望了VXI总线仪器校准的发展方向。     

Self-aligned offset gated poly-Si TFTs with a floating sub-gate

We have fabricated a self-aligned offset-gated poly-Si thin film transistor (TFT) by employing a novel photoresist reflow process. The gate structure of the new device is consisted of two unique patterns: A main-gate and a sub-gate. The new fabrication method extends the gate-oxide over the offset region. With the assistance of the sub-gate and reflowed photoresist a self-aligned offset region is successfully obtained due to the offset oxide acting as an implantation mask. The poly-Si TFT with symmetrical offsets is easily fabricated and the new method does not require any additional offset mask step. Compared with the misaligned offset gated poly-Si TFTs, excellent symmetric electrical characteristics are obtained