Pro Online-Durchsuchung

Zusammenfassung Die rasante Entwicklung des Internets bewirkt neben einer sich verst?rkenden Internationalisierung von Terrorismus und Organisierter Kriminalit?t einen Strukturwandel weltweiter Kommunikation und Datenspeicherung.     

1D selection of 2D objects in head-worn displays

In current desktop user interfaces, selection is usually accomplished easily with a mouse or a similar two-dimensional locator. In wearable computing, however, controlling two dimensions simultaneously gets significantly harder: a change in one dimension results easily in an undesired change in the other dimension as well when the user is occupied with a parallel task – such as walking. We present a way to overcome this problem by applying one-dimensional selection for graphical user interfaces in head-worn displays. Our new interaction technique allows a wearable computer user to perform object selection tasks easily and accurately. The technique is based on a visible circle on the screen. The user controls the circle, altering its radius with a one-dimensional valuator. The midpoint of the circle is in the middle of the screen. The object currently on the perimeter of the circle is highlighted and can be selected. Our preliminary usability evaluation, applying our custom evaluation method designed especially for walking users, indicates that the proposed technique is usable also when walking.     

The Rician inverse Gaussian distribution: a new model for non-Rayleigh signal amplitude statistics.

In this paper, we introduce a new statistical distribution for modeling non-Rayleigh amplitude statistics, which we have called the Rician inverse Gaussian (RiIG) distribution. It is a mixture of the Rice distribution and the inverse Gaussian distribution. The probability density function (pdf) is given in closed form as a function of three parameters. This makes the pdf very flexible in the sense that it may be fitted to a variety of shapes, ranging from the Rayleigh-shaped pdf to a noncentral chi2-shaped pdf. The theoretical basis of the new model is quite thoroughly discussed, and we also give two iterative algorithms for estimating its parameters from data. Finally, we include some modeling examples, where we have tested the ability of the distribution to represent locale amplitude histograms of linear medical ultrasound data and single-look synthetic aperture radar data. We compare the goodness of fit of the RiIG model with that of the K model, and, in most cases, the new model turns out as a better statistical model for the data. We also include a series of log-likelihood tests to evaluate the predictive performance of the proposed model.     

Electronic Transport in Ultrathin Gold Films on Si(111)

The morphology and electronic transport of ultrathin Au films with thicknesses d = 1 ? 5 monolayers (ML) deposited on Si(111)7 × 7 surfaces is investigated by in situ scanning tunneling microscopy and electrical resistance measurements for temperatures T = 2 ? 300 K. With decreasing film thickness, i.e. decreasing sheet conductance G_s, a transition from a weakly conducting regime described by a logarithmic temperature dependence to an insulating regime occurs. In the insulating regime, the temperature dependence is described by G_s ∝ exp[?(T ₀ /T) ⁿ] with an exponent n which gradually changes from 0.69 to 1 with decreasing film thickness. In contrast, for the Si(111)6 × 6-Au reconstruction obtained after annealing, an exponent n = 1/2 is found suggesting the formation of a soft Coulomb gap due to electron-electron interaction. PACS numbers: 68.37.-d, 68.55.-a, 73.50.-h, 73.25.+i, 81.15.-z     

Data in Voice — In-Band Short Messaging Service (SMS) für den analogen Flugfunk

6. Zusammenfassung  In diesem Artikel wurde die Data in Voice-Technologie vorgestellt. DiV ist eine Methode, die es erlaubt, kurze Daten-Messages gemeinsam mit der Sprache im analogen Flugfunkkanal zu übertragen. Man ist bei FREQUENTIS überzeugt, dass man mit dieser Methode viele Nachteile des vorhandenen analogen Flugfunks beseitigen und dadurch die Flugsicherheit wesentlich erh?hen k?nnte.     

Mesa and planar SiGe-HBTs on MBE-wafers

SiGe-HBTs have the potential for outstanding analog and digital or mixed-signal high frequency circuits widely based on standard Si technology. Here we review on MBE grown transistors and circuits. Processes and results of a research-like SiGe HBT and two possible production relevant HBT versions are presented. The high frequency results with f_max and f_T up to 120 GHz and a minimum noise figure of 0.9 dB at 10 GHz demonstrate the advantage of using MBE samples with steep and high base doping and high germanium contents. A comparison to the concept of reported low doped, low germanium and triangular profiled SiGe base layers, realized by UHV-CVD, is given. In addition, some circuit demonstrators of SiGe-ICs will be presented.