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41.
BACKGROUND: We postulated that pathophysiologic processes under nonpulsatile circulation are related to the behavior of the sympathetic nerve activity that regulates tissue perfusion. METHODS: Pulsatile and nonpulsatile pumps were installed in parallel in the left heart bypass circuit of anesthetized goats (n = 9) so that pulsatile circulation could be converted to nonpulsatile circulation instantly. At 5 minutes before and after systemic depulsation, we measured hemodynamic indices, renal nerve activity, and regional blood flow of the brain, heart, and renal cortex. RESULTS: Renal nerve activity was significantly elevated after systemic depulsation (15.6 +/- 9.3 versus 19.4 +/- 9.8 microV), when mean aortic pressure remained almost constant. The renal cortical flow was significantly reduced after depulsation (3.61 +/- 1.23 versus 2.93 +/- 1.19 mL.min-1.g-1), whereas no significant difference was found in the regional blood flow of the brain or the heart. CONCLUSIONS: The significant reduction of renal cortical blood flow after systemic depulsation is associated with a significant increase in renal nerve activity. Our results suggest that increased renal nerve activity plays an important role in the reduction of renal function after systemic depulsation.  相似文献   
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Summary 1,4-Bis(3-quinolyl)-1,3-butadiyne (DQ) is known to be polymerized in solid state to give the corresponding polydiacetylene. However, the polymer yield of DQ bulk crystals is low. Thus, we prepared several types of DQ crystals by different procedures to find the reason for the low polymer yield. We found three modifications of DQ crystals and they were evaluated by spectroscopic measurements and X-ray diffraction. DQ bulk crystals (Crystal I) and thermally grown DQ crystals on Crystal I (Crystal II) have the same structure classified to Type A, which gives regular polydiacetylene structure in low polymer yields. DQ crystals grown on glass plates by sublimation (Crystal III) belong to the second modification of Type B. DQ nanocrystals prepared by the reprecipitation method (Crystal IV) are Type B, and thermally grown DQ crystals on nanocrystals (Crystal V) are Type C. Crystals of Types B and C could be polymerized in low yields without showing excitonic absorption of polydiacetylene indicating irregular polymerization other than 1,4-addition. For crystals of Type A, we found that the 1,4-addition polymerization proceeded only in near-surface portions of the crystals. It can be plausibly explained that mobile monomers in the near-surface portion are only able to take part in their polymerization, resulting in low polymer conversion.  相似文献   
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Reactant shape selectivity of supported titanium catalysts for epoxidation of cyclohexene and 2-hexene has an excellent correlation with the pore diameter of the catalysts. With titanosilicate the preference to cis isomer epoxidation is small compared to TiO2-SiO2 probably because of the restriction of its diffusion imposed by the zeolite micropore structure.  相似文献   
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This paper describes a 128-kb FeRAM macro for smart-card microcontrollers. This macro, which was designed and fabricated using a 0.35-/spl mu/m three-metal CMOS and a Capacitor-on-Metal/Via-stacked-Plug (CMVP) process technology, is ideally suited for recent system LSIs such as smart-card microcontrollers. It has a flexible memory size ranging from 32 to 128 kb, a low consumption current of 0.3 mA, and endurance of more than 10/sup 8/ write/read cycles under a wide range of supply voltages, from 2.7 to 5.5 V. These characteristics, which are required of not only contact-type smart-card microcontrollers but also contactless-type ones, were achieved by using four newly developed circuit technologies: 1) a three-metal CMVP memory cell; 2) a voltage-regulating architecture; 3) a main/sub bitline and wordline structure; and 4) a dynamic-type offset sense amplifier.  相似文献   
46.
This paper reports our experiment on training a three layer forwards neural network with backpropagation algorithm (BP) to memorise acoustic emission (AE) behaviors of magnesium alloy during fatigue test process and perform the mapping from AE behaviors to fatigue crack propagation. This study reveals the potential possibility of using artificial neural networks for automated AE testing. Simulation results are very encouraging and conclusively in favor of this attempt.  相似文献   
47.
We have isolated three unique NaPi-2-related protein cDNAs (NaPi-2alpha, NaPi-2beta, and NaPi-2gamma) from a rat kidney library. NaPi-2alpha cDNA encodes 337 amino acids which have high homology to the N-terminal half of NaPi-2 containing 3 transmembrane domains. NaPi-2beta encodes 327 amino acids which are identical to the N-terminal region of NaPi-2 containing 4 transmembrane domains, whereas the 146 amino acids in the C-terminal region are completely different. In contrast, NaPi-2gamma encodes 268 amino acids which are identical to the C-terminal half of NaPi-2. An analysis of phage and cosmid clones indicated that the three related proteins were produced by alternative splicing in the NaPi-2 gene. In a rabbit reticulocyte lysate system, NaPi-2 alpha, beta, and gamma were found to be 36, 36, and 29 kDa amino acid polypeptides, respectively. NaPi-2alpha and NaPi-2gamma were glycosylated and revealed to be 45- and 35-kDa proteins, respectively. In isolated brush-border membrane vesicles, an N-terminal antibody was reacted with 45- and 40-kDa, and a C-terminal antibody was reacted with 37-kDa protein. The sizes of these proteins corresponded to those in glycosylated forms. A functional analysis demonstrated that NaPi-2gamma and -2alpha markedly inhibited NaPi-2 activity in Xenopus oocytes. The results suggest that these short isoforms may function as a dominant negative inhibitor of the full-length transporter.  相似文献   
48.
We have developed a low-leakage and highly reliable 1.5-nm SiON gate-dielectric by using radical oxygen and nitrogen. In this development, we introduce a new method for determining an ultrathin SiON gate-dielectric thickness based on the threshold voltage dependence on the substrate bias in MOSFETs. It was found that oxidation using radical oxygen followed by nitridation using radical nitrogen provides the 1.5-nm (oxide equivalent thickness) SiON, in which leakage current is two orders of magnitude less than that of 1.5-nm SiO/sub 2/ without degrading device performance in NMOSFETs. The 1.5-nm (oxide equivalent thickness) SiON was also found to be ten times more reliable than 1.5-nm SiO/sub 2/.  相似文献   
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