TEM characterization of Co-Al-O nano-granular TMR film

Co-Al-O film was fabricated using the reactive r.f. magnetron sputtering technique. A maximum magnetoresistance (MR) of approximately 7% was established through optimizing the sputter deposition conditions such as sputter power and gas flow rate. TEM characterization of the film revealed a nano-granular structure that consisted of ferromagnetic grains with grain diameters on the order of several nm together with non-magnetic grain boundary layers with the thickness on the order of less than 1 nm. The large MR was attributed to electron tunneling thorough this very thin grain boundary layer between individual ferromagnetic grains.     

Development of thermoelectric module based on dense Ca3Co4O9 and Zn0.98Al0.02O legs

Ca₃Co₄O₉ (p-type) and Zn_0.98Al_0.02O (n-type) pellets were prepared by conventional sintering (CS) and Spark Plasma sintering (SPS) starting from the oxides. The best p-type sample was SPS Ca₃Co₄O₉ obtained from pre-sintered pellets, with electrical conductivity σ = 144 S/cm and Seebeck coefficient S = 172 μV/K at 800 °C, while thermal conductivity κ = 2.00 W/m×K and figure of merit ZT = 0.23. The best n-type sample was CS Zn_0.98Al_0.02O showing σ = 83 S/cm and S = ?268 μV/K at 800 °C, while = 5.03 W/m×K and ZT = 0.127. The output power of a module based on SPS Ca₃Co₄O₉ and CS Zn_0.98Al_0.02O legs was 2.26 mW (with T = 500 °C, ΔT = 248 °C).     

Extremely low-loss 1.5%-/spl Delta/ 32-channel athermal arrayed-waveguide grating multi/demultiplexer

A silica-based 1.5%-/spl Delta/ 100 GHz-spacing 32-channel athermal arrayed-waveguide grating (AWG) with compact size and extremely low insertion loss is described. By reducing the fibre coupling loss and the excess loss in a silicone-filled groove, an insertion loss of 1.3 dB was achieved with this athermal AWG.     

Reduction of Second-Order Temperature Dependence of Athermal AWG With Resin-Filled Groove by Pressure Control

In this letter, we have developed a novel technique for improving the temperature stability of an athermal silica-based arrayed-waveguide grating with a resin-filled groove. We compensated for the residual second-order temperature dependence of the passband wavelength using the pressure-induced refractive index change in a resin inserted into the optical paths. Pressure control under the temperature variation was achieved by using a structure composed of an optical fiber piston and bimetal actuators. We demonstrated that the passband wavelength variation was successfully reduced from 0.080 to 0.025 nm in a -40degC - 85degC temperature range, without any insertion loss increase or spectral change.     

A 146-mm/sup 2/ 8-gb multi-level NAND flash memory with 70-nm CMOS technology

An 8-Gb multi-level NAND Flash memory with 4-level programmed cells has been developed successfully. The cost-effective small chip has been fabricated in 70-nm CMOS technology. To decrease the chip size, a one-sided pad arrangement with compacted core architecture and a block address expansion scheme without block redundancy replacement have been introduced. With these methods, the chip size has been reduced to 146 mm/sup 2/, which is 4.9% smaller than the conventional chip. In terms of performance, the program throughput reaches 6 MB/s at 4-KB page operation, which is significantly faster than previously reported and very competitive with binary Flash memories. This high performance has been achieved by the combination of the multi-level cell (MLC) programming with write caches and with the program voltage compensation technique for neighboring select transistors. The read throughput reaches 60 MB/s using 16I/O configuration.     

The effect of ulinastatin on CFU-C colony formation in mouse myelocyte cultures

The mixture of 5'-guanylylimidodiphosphate (Gpp(NH)p)/EDTA/NaCl has been used to delineate low-affinity conditions for agonists binding to G-protein-linked receptors. The effects of this mixture on [3H]RX821002 (2-methoxyidazoxan) binding to alpha2-adrenoceptors were evaluated in different tissues. The density of alpha2-adrenoceptors in the presence of the mixture was 11, 78 and 60% higher in human cortex (predominant alpha2A), human caudate (alpha2A + alpha2C) and rat kidney (alpha2A + alpha2B), respectively, than in its absence. In rat kidney, masking of alpha2B-adrenoceptors by ARC239 (2-[2-[4-(o-methoxyphenyl)-piperazin-1-yl]-ethyl]-4,4-dimethyl-1,3 -(2H,4H)-isoquinolindione) (50 nM) or masking of alpha2A-adrenoceptors by BRL44408 (2-[2H-(1-methyl-1,3-dihydroisoindole)methyl]-4,5-dihydroimidaz ole) (100 nM) demonstrated that the increase was in the alpha2B-adrenoceptor but not in the alpha2A-adrenoceptor subtype.     

Heterogeneous Multi-Core Architecture That Enables 54x AAC-LC Stereo Encoding

This paper describes a heterogeneous multi-core processor (HMCP) architecture that integrates general-purpose processors (CPUs) and accelerators (ACCs) to achieve exceptional performance as well as low-power consumption for the SoCs of embedded systems. The memory architectures of CPUs and ACCs were unified to improve programming and compiling efficiency. Advanced audio codec-low complexity (AAC-LC) stereo audio encoding was parallelized on a heterogeneous multi-core having homogeneous processor cores and dynamically reconfigurable processor (DRP) ACC cores in a preliminary evaluation of the HMCP architecture. The performance evaluation revealed that 54times AAC encoding was achieved on the chip with two CPUs at 600 MHz and two DRPs at 300 MHz, which achieved encoding of an entire CD within 1- 2 min.     

Association of Ligamentum Flavum Hypertrophy with Adolescent Idiopathic Scoliosis Progression—Comparative Microarray Gene Expression Analysis

The role of the ligamentum flavum (LF) in the pathogenesis of adolescent idiopathic scoliosis (AIS) is not well understood. Using magnetic resonance imaging (MRI), we investigated the degrees of LF hypertrophy in 18 patients without scoliosis and on the convex and concave sides of the apex of the curvature in 22 patients with AIS. Next, gene expression was compared among neutral vertebral LF and LF on the convex and concave sides of the apex of the curvature in patients with AIS. Histological and microarray analyses of the LF were compared among neutral vertebrae (control) and the LF on the apex of the curvatures. The mean area of LF in the without scoliosis, apical concave, and convex with scoliosis groups was 10.5, 13.5, and 20.3 mm², respectively. There were significant differences among the three groups (p < 0.05). Histological analysis showed that the ratio of fibers (Collagen/Elastic) was significantly increased on the convex side compared to the concave side (p < 0.05). Microarray analysis showed that ERC2 and MAFB showed significantly increased gene expression on the convex side compared with those of the concave side and the neutral vertebral LF cells. These genes were significantly associated with increased expression of collagen by LF cells (p < 0.05). LF hypertrophy was identified in scoliosis patients, and the convex side was significantly more hypertrophic than that of the concave side. ERC2 and MAFB genes were associated with LF hypertrophy in patients with AIS. These phenomena are likely to be associated with the progression of scoliosis.     

Electron microscope studies of InxGav1−xAs/GaAs/Si grown by metalorganic chemical vapor deposition

The microstructure of In_xGa_1−xAs/GaAs (5 nm/5 nm, x < 0 to 1.0), as grown by a metalorganic chemical vapor deposition two-step growth technique on Si(100) at 450‡C, and subsequently annealed at 750‡C, is investigated using plan-view and cross-sectional transmission electron microscopy. The variations in resultant island morphology and strain as a function of the In content were examined through the comparison of the misfit dislocation arrays and moirés observed. The results are discussed in relation to the ways in which the island relaxation process changes for high In content.     

Monolithic PIN-HEMT receiver with internal equaliser for long-wavelength fibre optic communications

An optical receiver, in which a GaInAs PIN photodiode, an AlInAs/GaInAs HEMT high impedance amplifier and even an equaliser were integrated monolithically on an InP substrate, has been fabricated. An optical sensitivity of -30.4 dBm was obtained at 1.2 Gbit/s and 1.3 mu m wavelength.<>