全文获取类型
收费全文 | 1379篇 |
免费 | 24篇 |
国内免费 | 1篇 |
专业分类
电工技术 | 39篇 |
综合类 | 3篇 |
化学工业 | 217篇 |
金属工艺 | 39篇 |
机械仪表 | 18篇 |
建筑科学 | 17篇 |
能源动力 | 28篇 |
轻工业 | 61篇 |
水利工程 | 1篇 |
无线电 | 229篇 |
一般工业技术 | 248篇 |
冶金工业 | 377篇 |
原子能技术 | 53篇 |
自动化技术 | 74篇 |
出版年
2023年 | 9篇 |
2021年 | 25篇 |
2020年 | 8篇 |
2019年 | 6篇 |
2018年 | 13篇 |
2017年 | 16篇 |
2016年 | 23篇 |
2015年 | 8篇 |
2014年 | 23篇 |
2013年 | 34篇 |
2012年 | 34篇 |
2011年 | 42篇 |
2010年 | 38篇 |
2009年 | 43篇 |
2008年 | 57篇 |
2007年 | 33篇 |
2006年 | 43篇 |
2005年 | 41篇 |
2004年 | 32篇 |
2003年 | 33篇 |
2002年 | 43篇 |
2001年 | 36篇 |
2000年 | 26篇 |
1999年 | 49篇 |
1998年 | 130篇 |
1997年 | 98篇 |
1996年 | 64篇 |
1995年 | 47篇 |
1994年 | 23篇 |
1993年 | 35篇 |
1992年 | 26篇 |
1991年 | 19篇 |
1990年 | 25篇 |
1989年 | 21篇 |
1988年 | 13篇 |
1987年 | 17篇 |
1986年 | 19篇 |
1985年 | 24篇 |
1984年 | 12篇 |
1983年 | 12篇 |
1982年 | 10篇 |
1981年 | 11篇 |
1980年 | 16篇 |
1979年 | 8篇 |
1978年 | 5篇 |
1977年 | 13篇 |
1976年 | 22篇 |
1975年 | 5篇 |
1974年 | 4篇 |
1973年 | 5篇 |
排序方式: 共有1404条查询结果,搜索用时 15 毫秒
91.
A remarkable threshold current density reduction (from 3.5 kA/cm/sup 2/ to 1.6 kA/cm/sup 2/) of GaInP/AlInP visible light lasers grown by gas source molecular beam epitaxy (GS-MBE) was obtained by introducing 50 pairs of GaInP(7.1 AA)/AlInP(7.1 AA) short period superlattice confinement (SLC) layers. As a result, the room temperature continuous wave (CW) operation was obtained at 669 nm with a minimum threshold current of 50 mA and maximum light output of 10.5 mW.<> 相似文献
92.
Kishino K. Kikuchi A. Yoshizawa M. Fujita N. Kushi K. Sasamoto H. 《IEEE journal of selected topics in quantum electronics》1998,4(3):550-556
Novel growth technologies of III-nitrides for fabricating optical devices by molecular beam epitaxy using RF-plasma excited nitrogen (RF-MBE) were investigated. A relatively high-growth rate, up to 1.4 μm/h of GaN with high-electrical and high-optical quality was obtained. The concept of AlGaN quasi-ternary (QT) compounds, consisting of GaN-AlGaN short period superlattice, was demonstrated and the Al composition was controlled with a shutter control method in the range of 0-0.47. Using the QT technology, a GaN-Al0.07Ga0.933N-Al0.3Ga0.7 N multiquantum-well heterostructure was fabricated to show the effectiveness of the method 相似文献
93.
Hitoshi Ohta Susumu Okubo Shojiro Kimura Tsuyoshi Tanaka Hikomitsu Kikuchi Hiroshi Nagasawa 《Journal of Infrared, Millimeter and Terahertz Waves》2001,22(3):387-391
Developments of the high field ESR system in Kobe University is presented. Using Gunn oscillators and backward traveling oscillators (BWO), we can cover the frequency region from 30 to 1183.6 GHz with the use of InSb detector. Pulsed magnetic field up to 30 T is available and we are now trying to extend the field up to 40 T. Temperature range is from 1.8 to 300 K. Using this system, we studied S=1/2 ladder like system Cu2(C5H12N2)2Cl4, and found a new magnetic transition at 10.1 T at 1.8 K. The temperature dependence of ESR in Cu2(C5H12N2)2CI4 shows g-shift below 8 K which corresponds to the maximum of the magnetic susceptibility. The g-shift below 8 K suggests the increase of the quantum fluctuation in the system, and the role of the quantum fluctuation in Cu2(C5H12N2)2CI4 is discussed. 相似文献
94.
Marie-Paule Bassez Yoshinori Takano Naohiko Ohkouchi 《International journal of molecular sciences》2009,10(7):2986-2998
This article presents an experimental analysis of the organic content of two serpentinized peridotite rocks of the terrestrial upper mantle. The samples have been dredged on the floor of the Ashadze and Logatchev hydrothermal sites on the Mid-Atlantic Ridge. In this preliminary analysis, amino acids and long chain n-alkanes are identified. They are most probably of biological/microbial origin. Some peaks remain unidentified. 相似文献
95.
An expandable Si bipolar 2.4 Gbit/s throughput, 52 Mbit/s 48-channel time-division switching LSI system is described. A high-throughput of 2.4 Gbit/s and a power-dissipation of 5.3 W are achieved by adopting a low-voltage swing four-serial-gated differential bipolar circuit design and super self-aligned process (SST-1A) logic-in-memory LSI technology. This LSI is applicable to the digital video time-division switching and digital crossconnect systems of future B-ISDN.<> 相似文献
96.
Akazawa Y. Wakimoto T. Kikuchi H. Kawarada K. Kato N. Ohwada K. 《Electronics letters》1985,21(18):790-791
The letter presents the design and performance of a gigahertz band limiting amplifier IC using GaAs MESFET IC technology. With a two-chip connection, an AM/PM conversion of 0.7°/dB over 43 dB input dynamic range at 1 GHz has been achieved. 相似文献
97.
98.
Shuhei Inoue Yoshihiro Kikuchi Yukihiko Matsumura 《Diamond and Related Materials》2008,17(11):1888-1890
A new effective catalysts combination of iron — nickel for alcohol CVD technique was found. This catalyst catalyzed well as well as the typical catalyst of iron — cobalt catalysts, but gave a different diameter distribution. Calculating their electrical density of states under the assumption of their solid lattice structures, the result was fairly consistent with experimental results. The number of electrical states near Fermi level that is considered to be important for catalytic reaction is enough and the DOS of iron – nickel catalyst was quite similar to that of cobalt unlike manganese – copper catalyst. Consequently, a blend of catalysts that has a similar DOS to cobalt and has enough states near the Fermi level can be a good catalyst for alcohol CVD. 相似文献
99.
The FM-noise spectrum and the linewidth of 1.3 μm DFB (distributed feedback) semiconductor lasers measured in the high-power state up to 20 mW are discussed. A 5-MHz residual linewidth is observed in the high-power limit. The FM-noise spectrum consists of white noise and 1/f noise. The spectral density of the white noise is reduced by the increase in the output power, whereas that of the 1/f noise is unchanged, which means that the linewidth residual in the high-power limit is caused by the 1/f noise rather than the white noise. The impact of the 1/f -type FM noise on coherent optical communication systems is also discussed 相似文献
100.