Plant Copper Amine Oxidases: Key Players in Hormone Signaling Leading to Stress-Induced Phenotypic Plasticity

Polyamines are ubiquitous, low-molecular-weight aliphatic compounds, present in living organisms and essential for cell growth and differentiation. Copper amine oxidases (CuAOs) oxidize polyamines to aminoaldehydes releasing ammonium and hydrogen peroxide, which participates in the complex network of reactive oxygen species acting as signaling molecules involved in responses to biotic and abiotic stresses. CuAOs have been identified and characterized in different plant species, but the most extensive study on a CuAO gene family has been carried out in Arabidopsis thaliana. Growing attention has been devoted in the last years to the investigation of the CuAO expression pattern during development and in response to an array of stress and stress-related hormones, events in which recent studies have highlighted CuAOs to play a key role by modulation of a multilevel phenotypic plasticity expression. In this review, the attention will be focused on the involvement of different AtCuAOs in the IAA/JA/ABA signal transduction pathways which mediate stress-induced phenotypic plasticity events.     

Design and Characterization of a New pVII Combinatorial Phage Display Peptide Library for Protease Substrate Mining Using Factor VII Activating Protease (FSAP) as Model

We describe a novel, easy and efficient combinatorial phage display peptide substrate-mining method to map the substrate specificity of proteases. The peptide library is displayed on the pVII capsid of the M13 bacteriophage, which renders pIII necessary for infectivity and efficient retrieval, in an unmodified state. As capture module, the 3XFLAG was chosen due to its very high binding efficiency to anti-FLAG mAbs and its independency of any post-translational modification. This library was tested with Factor-VII activating protease (WT-FSAP) and its single-nucleotide polymorphism variant Marburg-I (MI)-FSAP. The WT-FSAP results confirmed the previously reported Arg/Lys centered FSAP cleavage site consensus as dominant, as well as reinforcing MI-FSAP as a loss-of-function mutant. Surprisingly, rare substrate clones devoid of basic amino acids were also identified. Indeed one of these peptides was cleaved as free peptide, thus suggesting a broader range of WT-FSAP substrates than previously anticipated.     

A novel compact circuit for 4-PAM energy-efficient high speed interconnect data transmission and reception

Transmission of signals, whether on-chip or off-chip, places severe constraints on timing and extracts a large price in energy. New silicon device technologies, such as back-plane CMOS, provide a programmable and adaptable threshold voltage as an additional tool that can be used for low power design. We show that one particularly desirable use of this freedom is energy-efficient high-speed transmission across long interconnects using multi-valued encoding. Our multi-valued CMOS circuits take advantage of the threshold voltage control of the transistors, by using the signal-voltage-to-threshold-voltage span, in order to make area-efficient implementations of 4-PAM (pulse amplitude modulation) transceivers operating at high speed. In a comparison of a variety of published technologies, for signal transmission with interconnects of 10-15 mm length, we show up to 50% improvement in energy for on-chip signal transmission over binary encoding together with higher limits for operating speeds without a penalty in circuit noise margin.     

Electrical properties of N2O/NH3 plasma grownoxynitride on strained-Si

Growth of ultrathin (<100 Å) oxynitride on strained-Si using microwave N₂O and NH₃ plasma is reported. X-ray photoelectron spectroscopy (XPS) results indicate a nitrogen-rich layer at the strained-Si/SiO₂ interface. The electrical properties of oxynitrides have been characterized using a metal-insulator-semiconductor (MIS) structure. A moderately low value of insulator charge density (6.1×10¹⁰ cm^-2) has been obtained for NH₃ plasma treated N₂O oxide sample. Nitrided oxide shows a larger breakdown voltage and an improved charge trapping properties under Fowler-Nordheim (F-N) constant current stress     

Bending and free vibration analysis of shear deformable laminated composite beams by finite element method

In the present investigation a higher-order shear deformation theory and the conventional first-order theory are used to develop a finite element method to analyse accurately the bending and free vibration behaviour of laminated composite beams, using nine-noded isoparametric elements. The higher-order theory assumes all the displacement components, u, v and w, which contain variation up to a cubic power of z. The effects of various parameters such as fibre orientation, stacking sequence, span-to-thickness ratio and support condition on the non-dimensionalised deflections, stresses and fundamental frequencies are investigated. Cases where only the higher-order theory is likely to yield accurate results are highlighted.     

Furnace grown gate oxynitride using nitric oxide (NO)

Gate oxynitride was grown in NO for the first time. This approach can provide a tight N accumulation near the Si/SiO₂ interface. Much lower thermal budget is required for an NO process than for an N₂O process to produce an oxynitride with useful properties. Submicron MOSFET's with NO oxynitride showed superior current drive characteristics and comparable hot carrier immunity to those with N₂O oxynitride     

The polar cluster like behavior in Ti substituted BaZrO3 ceramics

In this paper we report the evolution of the polar cluster like behavior with the incorporation of Ti⁴⁺ ion in BaZrO₃ Ceramics. Dielectric behavior of BaZr_xTi_(1−x)O₃ (x = 1.00, 0.95, 0.90, 0.85) ceramics is studied in the temperature range from 300 to 30 K. Polar cluster like behavior becomes more prominent with the increase in content of Ti⁴⁺ ion. The dielectric relaxation is analyzed by Vogel–Fulcher relation and Arrhenius law. Frequency dependence of dielectric constant and low loss tangent of these materials can be useful for the potential applications at low temperature.