Specific emitter identification for satellite communication using probabilistic neural networks

Electromagnetic signal emitted by satellite communication (satcom) transmitters are used to identify specific individual uplink satcom terminals sharing the common transponder in real environment, which is known as specific emitter identification (SEI) that allows for early indications and warning (I&W) of the targets carrying satcom furnishment and furthermore the real time electromagnetic situation awareness in military operations. In this paper, the authors are the first to propose the identification of specific transmitters of satcom by using probabilistic neural networks (PNN) to reach the goal of target recognition. We have been devoted to the examination by exploring the feasibility of utilizing the Hilbert transform to signal preprocessing, applying the discrete wavelet transform to feature extraction, and employing the PNN to perform the classification of stationary signals. There are a total of 1000 sampling time series with binary phase shift keying (BPSK) modulation originated by five types of satcom transmitters in the test. The established PNNs classifier implements the data testing and finally yields satisfactory accuracy at 8 dB(±1 dB) carrier to noise ratio, which indicates the feasibility of our method, and even the keen insight of its application in military.     

Hierarchical Attention for Part-Aware Face Detection

International Journal of Computer Vision - Expressive representations for characterizing face appearances are essential for accurate face detection. Due to different poses, scales, illumination,...     

Spreading and Curing Behaviors of a Thermosetting Droplet-Silicone on a Heated Surface

Thermosetting materials are widely used as encapsulation in the electrical packaging to protect the core electronic components from external force, moisture, dust, and other factors. However, the spreading and curing behaviors of such kind of fluid on a heated surface have been rarely explored. In this study, we experimentally and numerically investigated the spreading and curing behaviors of the silicone(OE6550 A/B, which is widely used in the light-emitting diode packaging) droplet with diameter of ～2.2 mm on a heated surface with temperature ranging from 25 ℃ to 250 ℃. For the experiments, we established a setup with high-speed camera and heating unit to capture the fast spreading process of the silicone droplet on the heated surface. For the numerical simulation, we built a viscosity model of the silicone by using the Kiuna's model and combined the viscosity model with the Volume of Fluid(VOF) model by the User Defined Function(UDF) method. The results show that the surface temperature significantly affected the spreading behaviors of the silicone droplet since it determines the temperature and viscosity distribution inside the droplet. For surface temperature varied from 25 ℃ to 250 ℃, the final contact radius changed from ～2.95 mm to ～1.78 mm and the total spreading time changed from ～511 s to ～0.15 s. By further analyzing the viscosity evolution of the droplet, we found that the decreasing of the total spreading time was caused by the decrease of the viscosity under high surface temperature at initial spreading stage, while the reduction of the final contact radius was caused by the curing of the precursor film. This study supplies a strategy to tuning the spreading and curing behavior of silicone by imposing high surface temperature, which is of great importance to the electronic packaging.     

Threshold privacy-preserving cloud auditing with multiple uploaders

International Journal of Information Security - Data integrity is a critical security issue in cloud storage. The data integrity checking schemes by a third-party auditor (TPA) have attracted a lot...     

Beam and image experiment of beam deflection electron gun for distributed X-ray sources

Distributed X-ray sources comprise a single vacuum chamber containing multiple X-ray sources that are triggered and emit X-rays at a specific time and location. This process facilitates an application for innovative system concepts in X-ray and computer tomography. This paper proposes a novel electron beam focusing, shaping,and deflection electron gun for distributed X-ray sources.The electron gun uses a dispenser cathode as an electron emitter, a mesh grid to control emission current, and two electrostatic lenses for beam shaping, focusing, and deflection. Novel focusing and deflecting electrodes were designed to increase the number of focal spots in the distributed source. Two identical half-rectangle opening electrodes are controlled by adjusting the potential of the two electrodes to control the electron beam trajectory, and then, multifocal spots are obtained on the anode target. The electron gun can increase the spatial density of the distributed X-ray sources, thereby improving the image quality. The beam experimental results show that the focal spot sizes of the deflected(deflected amplitude 10.5 mm)and non-deflected electron beams at full width at half maximum are 0.80 mm 90.50 mm and 0.55 mm 90.40 mm, respectively(anode voltage 160 kV; beam current 30 mA). The imaging experimental results demonstrate the excellent spatial resolution and time resolution of an imaging system built with the sources, which has an excellent imaging effect on a field-programmable gate array chip and a rotating metal disk.     

Structural,optical and electrical properties of indium doped Cu2ZnSn(S,Se)4 thin films synthesized by the DC and RF reactive magnetron cosputtering

Element doping into the Cu₂ZnSn(S,Se)₄ (CZTSSe) absorber is an effective method to optimize the performance of thin film solar cells. In this study, the Cu₂In_xZn_1-xSn(S,Se)₄ (CIZTSSe) precursor film was deposited by magnetron cosputtering technique using indium (In) and quaternary Cu₂ZnSnS₄ (CZTS) as targets. Meanwhile, the In content was controlled using the direct current (DC) power on In target (P_In). A single kesterite CIZTSSe alloy was formed by successfully doping a small number of In³⁺ into the main lattice of CZTSSe. The partial Zn²⁺ cations were substituted by In³⁺ ions, resulting in improving properties of CZTSSe films. Morphological analysis showed that large grain CIZTSSe films could be obtained by doping In. The well-distributed, smooth, and dense film was obtained when the P_In was 30 W. The band gap of CIZTSSe could be continuously adjusted from 1.27 to 1.05 eV as P_In increased from 0 to 40 W. In addition, the CIZTSSe alloy thin film at P_In = 30 W exhibited the best p-type conductivity with Hall mobility of 6.87 cm²V^?1s^?1, which is a potential material as the absorption layer of high-performance solar cells.     

Analysis and optimization of high-power pulse transformer for SXFEL

Longitudinal injection is a promising on-axis injection scheme for diffraction-limited storage rings. In the latest version of the Hefei advanced light source(HALS), both the dynamic aperture and momentum aperture have been optimized. A longitudinal injection scheme was investigated on the HALS using a doublefrequency radio frequency system. To evaluate the injection performance, various errors were considered. A series of tracking simulations were conducted, and the injection efficiency was obtained under different error levels.     

Closure of Internal Porosity in Continuous Casting Bloom During Heavy Reduction Process

Metallurgical and Materials Transactions B - To investigate the closure behavior of internal porosity (also referred to as internal void) in continuous casting bloom during heavy reduction (HR) and...     

A Comprehensive Analysis of Macrosegregation Formation During Twin-Roll Casting

Metallurgical and Materials Transactions B - A two-phase Eulerian–Eulerian volume-averaged model is used to predict the formation of macrosegregation during the twin-roll casting of...