Mean–variance relationship of the number of flows in traffic aggregation and its application to traffic management

We consider the mean–variance relationship of the number of flows in traffic aggregation, where flows are divided into several groups randomly, based on a predefined flow aggregation index, such as source IP address. We first derive a quadratic relationship between the mean and the variance of the number of flows belonging to a randomly chosen traffic aggregation group. Note here that the result is applicable to sampled flows obtained through packet sampling. We then show that our analytically derived mean–variance relationship fits well those in actual packet trace data sets. Next, we present two applications of the mean–variance relationship to traffic management. One is an application to detecting network anomalies through monitoring a time series of traffic. Using the mean–variance relationship, we determine the traffic aggregation level in traffic monitoring so that it meets two predefined requirements on false positive and false negative ratios simultaneously. The other is an application to load balancing among network equipments that require per-flow management. We utilize the mean–variance relationship for estimating the processing capability required in each network equipment.     

Autonomic load balancing of flow monitors

In monitoring flows at routers for flow analysis or deep packet inspection, the monitor calculates hash values from the flow ID of each packet arriving at the input port of the router. Therefore, the monitors must update the flow table at the transmission line rate, so high-speed and high-cost memory, such as SRAM, is used for the flow table. This requires the monitors to limit the monitoring target to just some of the flows. However, if the monitors randomly select the monitoring targets, multiple routers on the route will sometimes monitor the same flow, or no monitors will monitor a flow. To maximize the number of monitored flows in the entire network, the monitors must select the monitoring targets while maintaining a balanced load among them. We propose an autonomous load-balancing method where monitors exchange information on monitor load only with adjacent monitors. Numerical evaluations using the actual traffic matrix of Internet2 show that the proposed method improves the total monitored flow count by about 50% compared with that of independent sampling. Moreover, we evaluate the load-balancing effect on 36 backbone networks of commercial ISPs.     

Fabrication of 5.8‐in. OTFT‐driven flexible color AMOLED display using dual protection scheme for organic semiconductor patterning

Abstract— A 5.8‐in. wide‐QQVGA flexible color active‐matrix organic light‐emitting‐diode (AMOLED) display consisting of organic thin‐film transistors (OTFTs) and phosphorescent OLEDs was fabricated on a plastic film. To reduce the operating voltage of the OTFTs, Ta₂O₅ with a high dielectric constant was employed as a gate insulator. Pentacene was used for the semiconductor layer of the OTFTs. This layer was patterned by photolithography and dry‐etched using a dual protection layer of poly p‐xylylene and SiO₂ film. Uniform transistor performance was achieved in the OTFT backplane with QQVGA pixels. The RGB emission layers of the pixels were formed by vacuum deposition of phosphorescent small molecules. The resulting display could clearly show color moving images even when it was bent and operated at a low driving voltage (below 15 V).     

High-rate Decoupled Water Electrolysis System Integrated with α-MoO3 as a Redox Mediator with Fast Anhydrous Proton Kinetics

Hydrogen is a promising alternative to fossil fuels that can reduce greenhouse gas emissions. Decoupled water electrolysis system using a reversible proton storage redox mediator, where the oxygen evolution reaction and hydrogen evolution reaction are separated in time and space, is an effective approach to producing hydrogen gas with high purity, high flexibility, and low cost. To realize fast hydrogen production in such a system, a redox mediator capable of releasing protons rapidly is required. Herein, α-MoO₃, with an ultrafast proton transfer property that can be explained by a dense hydrogen bond network in the lattice oxygen arrays of HxMoO₃, is examined as a high-rate redox mediator for fast hydrogen production in acidic electrolytes. The α-MoO₃ redox mediator shows both a large capacity of 204 mAh g⁻¹ and fast hydrogen production at a current rate of 10 A cm⁻²(≈153 A g⁻¹), outperforming most of the previously reported solid-state redox mediators.     

Development of a pulse control-type MEMS microrobot with a hardware neural network

This article presents the micro-electro-mechanical systems (MEMS) microrobot which demonstrates locomotion controlled by hardware neural networks (HNN). The size of the microrobot fabricated by the MEMS technology is 4 × 4 × 3.5 mm. The frame of the robot is made of silicon wafer, and it is equipped with a rotary-type actuator, a link mechanism, and six legs. The rotary-type actuator generates rotational movement by applying an electrical current to artificial muscle wires. The locomotion of the microrobot is obtained by the rotation of the rotary-type actuator. As in a living organism, the HNN realized robot control without using any software programs, A/D converters, or additional driving circuits. A central pattern generator (CPG) model was implemented as an HNN system to emulate the locomotion pattern. The MEMS microrobot emulated the locomotion method and the neural networks of an insect with the rotary-type actuator, the link mechanism, and the HNN. The microrobot performed forward and backward locomotion, and also changed direction by inputting an external trigger pulse. The locomotion speed was 0.325 mm/s and the step width was 1.3 mm.     

Steam Reforming of Methanol on Copper Catalysts Supported on Large-Surface-Area ZnAl2O3

Steam reforming of methanol on various supported Cu catalysts was examined. Supports strongly affected catalyst activity and, among the catalysts tested, Cu catalyst supported on large-surface-area ZnAl₂O₄ showed the highest activity, which, to the best of our knowledge, was higher than those for the supported catalysts reported so far. For supported Cu catalysts, two species were observed. One was a dispersed Cu species having strong interaction between Cu and support, and the other was an isolated Cu species. The activity of the former species strongly depended on supports.     

Alteration of internal stresses in SiO2/Cu/TiN thin films by X-ray and synchrotron radiation due to heat treatment

A break of wiring by stress-migration becomes a problem with an integrated circuit such as LSI. The present study investigates residual stress in SiO₂/Cu/TiN film deposited on glass substrates. A TiN layer, as an undercoat, was first deposited on the substrate by arc ion plating and then Cu and SiO₂ layers were deposited by plasma coating. The crystal structure and the residual stress in the deposited multi-layer film were investigated using in-lab. X-ray equipment and a synchrotron radiation device that emits ultra-high-intensity X-rays. It was found that the SiO₂ film was amorphous and both the Cu and TiN films had a strong {1 1 1} orientation. The Cu and TiN layers in the multi thick (Cu and TiN:1.0 μm)-layer film and multi thin (0.1 μm)-layer film exhibited tensile residual stresses. Both tensile residual stresses in the multi thin-layer film are larger than the multi thick-layer film. After annealing at 400 °C, these tensile residual stresses in both the films increased with increasing the annealing temperature. Surface swelling formations, such as bubbles were observed in the multi thick-layer film. However, in the case of the multi thin-layer films, there was no change in the surface morphology following heat-treatment.     

Development of refractory armored silicon carbide by infrared transient liquid phase processing

Tungsten (W) and molybdenum (Mo) were coated on silicon carbide (SiC) for use as a refractory armor using a high power plasma arc lamp at powers up to 23.5 MW/m² in an argon flow environment. Both tungsten powder and molybdenum powder melted and formed coating layers on silicon carbide within a few seconds. The effect of substrate pre-treatment (vapor deposition of titanium (Ti) and tungsten, and annealing) and sample heating conditions on microstructure of the coating and coating/substrate interface were investigated. The microstructure was observed by scanning electron microscopy (SEM) and optical microscopy (OM). The mechanical properties of the coated materials were evaluated by four-point flexural tests. A strong tungsten coating was successfully applied to the silicon carbide substrate. Tungsten vapor deposition and pre-heating at 5.2 MW/m² made for a refractory layer containing no cracks propagating into the silicon carbide substrate. The tungsten coating was formed without the thick reaction layer. For this study, small tungsten carbide grains were observed adjacent to the interface in all conditions. In addition, relatively large, widely scattered tungsten carbide grains and a eutectic structure of tungsten and silicon were observed through the thickness in the coatings formed at lower powers and longer heating times. The strength of the silicon carbide substrate was somewhat decreased as a result of the processing. Vapor deposition of tungsten prior to powder coating helped prevent this degradation. In contrast, molybdenum coating was more challenging than tungsten coating due to the larger coefficient of thermal expansion (CTE) mismatch as compared to tungsten and silicon carbide. From this work it is concluded that refractory armoring of silicon carbide by Infrared Transient Liquid Phase Processing is possible. The tungsten armored silicon carbide samples proved uniform, strong, and capable of withstanding thermal fatigue testing.     

A novel chromatographic separation technique using tertiary pyridine resin for the partitioning of trivalent actinides and lanthanides

A novel chromatographic separation technique using a tertiary pyridine type resin has been applied to the partitioning of the trivalent actinides (An) and lanthanides (Ln) and several successful results have been shown. In an alcoholic hydrochloric acid system, the trivalent An were clearly separated from the Ln, while no such group separation was achieved in an alcoholic nitric acid system. On the other hand, the nitric acid system was more effective for the intragroup (i.e. individual) separation of the trivalent An and the Ln than the hydrochloric acid system. On the basis of these results, a novel concept for the partitioning of the trivalent An and Ln using the present separation technique and its flowchart have been proposed with its advantages and disadvantages.     

Self-Consistent Quantum Mechanical Monte Carlo MOSFET Device Simulation

We have developed a self-consistent quantum mechanical Monte Carlo device simulator that takes electron transport in quantized states into consideration. Two-dimensional quantized states in MOSFET channels are constructed from one-dimensional solutions of the Schrödinger equation at different positions along the channel, and the Schrödinger and Poisson equations are solved self-consistently in terms of electron concentration and electrostatic potential distribution. The channel electron concentration, velocity and drain currents are calculated with the one particle Monte Carlo approach incorporating the intra-valley acoustic phonon and inter-valley phonon scattering mechanisms. This simulator was applied to a 70 nm n-MOSFET transistor, and we found that current mostly flows through the lowest subband and transport is quasi-ballistic near the source junction. To quantitatively estimate the performance of advanced devices, we have developed an inversion carrier transport simulator based on a full-band model. Our simulation method enables us to evaluate device characteristics and analyze the transport properties of ultra-small MOSFETs.