Conduction band states of transition metal (TM) high-k gate dielectrics as determined from X-ray absorption spectra

This paper uses X-ray absorption spectroscopy to study the electronic structure of the high-k gate dielectrics including TM and RE oxides. The results are applicable to TM and rare earth (RE) silicate and aluminate alloys, as well as complex oxides comprised of mixed TM/TM and TM/RE oxides. These studies identify the nature of the lowest conduction band d^* states, which define the optical band gap, E_g, and the conduction band offset energy with respect to crystalline Si, E_B. E_g and E_B scale with the atomic properties of the TM and RE atoms providing important insights for identification high-k dielectrics that meet performance targets for advanced CMOS devices.     

Preparation of Pb(Zr0.52Ti484848)O3 thin films on silicon-on-insulator substrates by excimer laser deposition combined with rapid thermal annealing

In this paper we report the fabrication of ferroelectric Pb(Zr_0.52Ti_0.48)O₃ (PZT) thin films on Si-on-Insulator (SOI) substrates with and without an electrode by pulsed excimer laser deposition combined with rapid thermal annealing. Based on the structural and interfacial characteristics analysis by X-ray diffraction (XRD), Rutherford backscattering spectroscopy (RBS), cross-sectional transmission electron microscopy (XTEM) and automatic spreading resistance measurement (ASR), the film structure and orientation were revealed to be dependent on the annealing time and annealing temperature as well as deposition temperature. From RBS spectra and XTEM observation it is shown that the PZT thin films did not interact with the top silicon layers of SOI and that the composition of the film was similar to the target. The ASR measurements showed that the electrical properties of PZT/SOI as well as PZT/Pt/SOI were abrupt, and that the electrical properties of the SOI substrates were still good after the PZT growth.     

初论带状光纤缆结构设计

推导出了成叠带状光纤在松套管中余长的两个计算公式，此两公式是带状光纤缆结构设计需要用到的基本公式。此外，还对带状光纤缆结构设计作了初步讨论。     

双臂协调约束系统动力学问题探讨

本文讨论了双臂协调约束系统的动力学问题．文中系统地描述了该系统的适应于计算机程序化的建模方法；推导了系统的动力学方程，并给出了用约束矩阵的正交补矩阵处理系统所受协调约束的方法；编制了相应的计算机辅助分析程序ＤＲＣＲＣＳ，并用该程序对算例进行了动力学的数值分析。     

建立统计宏模型的新方法

本文介绍一个新的建立统计宏模型的系统，它采用新的方法，得到简化的二次多项式，这种形式便于优化处理，适用于容差设计。     

电化学引起Si：Er^3＋材料1.54μm发光增强

利用７７Ｋ红外光致发光实验研究了电化学过程对离子注入Ｓｉ：Ｅｒ＾３＋样品的光致发光影响。实验表明：电化学过程除在Ｓｉ：Ｅｒ＾３＋样品硅基质晶体中引入大量的深能级局域态外，还使Ｓｉ：Ｅｒ＾３＋样品中的１．５４μｍ光致发光效率明显提高，且Ｅｒ＾３＋发光峰增宽，次峰更丰富。     

砷化镓声电荷转移延迟线的设计与工艺研究

由于声电荷转移(ACT)这一新颖的高速缓冲抽样技术的发明,使得新一代高速高频信号处理器件的实现成为可能。本文研究了第二代平面结构的ACT器件转移沟道的电位分布特性,给出了平面结构ACT延迟线的设计,并研究了ACT器件的工艺实现。     

聚腈分子的飞秒时间分辨光克尔效应

本文利用飞秒时间分辩光克尔效应，对主链为Ｃ＝Ｎ结构的两种共轭聚腈高分子的溶液和薄膜进行研究，所测得的时间分辨光克尔信号均表现为超快响应。