Proton irradiation damage mechanism of the InAlAs／InGaAs／InAlAs quantum well

InP-based high electron mobility transistors (HEMT) have shown a great potential for national defense and satellite radar in space radiation environment applications. This paper studies the proton radiation damage mechanism of its critical structure InAlAs／InGaAs／InAlAs quantum well. The proton projection range and vacancy defect information are obtained at different incident proton energies of 50keV, 75keV and 200keV by SRIM software. With the increase of proton energy, the proton injection depth is increasing and eventually protons pass through the material layers. Besides, the proton radiation induced vacancy defects numbers around hetero-junction increase first and decrease subsequently, and As vacancies are the main proton radiation induced defects. In addition, non-ionizing energy loss (NIEL) of In_0.52Al_0.48As and In_0.53Ga_0.47As material is computed under different incident proton energies by the analytical model. The change trend of NIEL is identical to the induced vacancy numbers, namely, NIEL first increases and then decreases as the incident proton energy increases. Finally the degrading effect of the radiation-induced As defect is detected in the two-dimensional electron gas in the quantum well, which confirms that the major proton radiation damage mechanism of the quantum well is the induced vacancy defects by NIEL.     

Growth and characterization of indium doped zinc oxide films sputtered from powder targets

Indium doped Zn O films were grown on quartz glass substrates by radio frequency magnetron sputtering from powder targets. Indium content in the targets varied from 1at% to 9at%. In doping on the structure, optical and electrical properties of Zn O thin films were studied. X-ray diffraction shows that all the films are hexagonal wurtzite with c-axis perpendicular to the substrates. There is a positive strain in the films and it increases with indium content. All the films show a high transmittance of 86% in the visible light region. Undoped Zn O thin film exhibits a high transmittance in the near infrared region. The transmittance of indium doped Zn O thin films decreases sharply in the near infrared region, and a cut-off wavelength can be found. The lowest resistivity of 4.3×10~(-4) Ω·cm and the highest carrier concentration of 1.86×10~(21) cm~(-3) can be obtained from Zn O thin films with an indium content of 5at% in the target.     

Estimation of access failure probability in D2D underlaid cellular networks

Device-to-Device (D2D) communication can reduce the mobile devices' energy consumption and increase the spectral efficiency in D2D underlaid cellular networks. However, D2D users will interfere with co-channel cellular users, which can lead to cellular communication access failures. There are two reasons for cellular communication access failures: (1)D2D interference and (2)insufficient spectrum resources. To address the absence of research on the performance of cellular services' access in D2D underlaid cellular networks, this paper defines the new services' access failure probability and handoff services' access failure probability to evaluate the effect of both D2D interference and limited resources on cellular communication access. Based on the stochastic geometry and stochastic process, a random network model is presented to estimate the access failure probabilities, which can provide guidelines for network design to ensure cellular services' access. The accuracy of the estimated access failure probability is validated through extensive simulations.     

Interface trap effect on the transient characteristics of a photovoltaic InSb infrared detector

The transient characteristics can be significantly affected by the interface trap. In order to reveal the intrinsic mechanism and provide some references for the design of detectors, the interface trap effect on the transient characteristics of a back-illuminated photovoltaic InSb infrared detector is studied with two-dimensional simulations. The relationships between interface traps and some key physical parameters, such as the hole concentration, the recombination rate and the electric field, are analyzed to reveal the intrinsic mechanisms of the influence of the interface traps on the transient characteristics. Studies show that with the increase of the interface trap density, the recombination rate and the electric field near the interface increase, the hole concentration decreases, and the “black holes” in current density distribution appear and move forward to the pn junction. And the transient photoresponse decreases with the increase of the interface trap density.     

水平地震作用下地下结构考虑转动时的动力响应

利用分析力学的Lagrange方程,推导了地下结构在水平地震作用下同时考虑结构的平动和转动效应的运动方程.为了简化计算,将地下结构假定为矩形刚体,地基采用温克尔弹性地基模型,且不考虑结构与周围土介质的阻尼作用.首先得到了地下结构与土相互作用时的动能和势能,然后利用分析力学的Lagrange方程推导出了结构的运动方程.通过算例研究地下结构在水平地震作用下考虑转动分量和不考虑转动分量时的受力差别.     

建筑构造课程教学改革实践探索

针对建筑构造课程教学中遇到的难题,分别从课堂教学环节、设计作业周环节、考试与考核环节三个方面进行了教学改革尝试,旨在通过引入新的教学思路、采用不同的教学方法等来调动学生主动学习的积极性及参与课堂的兴趣,从而提高课堂教学效果。     

《易经》及其思维方式对大学生思维能力的培养

《易经》的神秘之处,源自于它的"设卦观象".通过《易经》的学习,领会《易经》的思维方式,就是为了培养和训练自己对周围世界的洞察力,读懂天人之间的语言,然后砥砺思想,开拓视野,以全新的视角来思考和面对各种问题.其中,《易经》的辩证思维、卦象与卦辞所启示的处世方法,对我们加深对当今世界的认识,也具有很大的启发意义.     

综合物探方法在地面塌陷勘察中的应用

地面塌陷引发的地质灾害对国民经济建设的危害重大。目前,探测塌陷区的物探方法种类繁多,但没有一种方法能全面解决各种问题,需综合运用多种方法。以安徽某地面塌陷研究对象,运用高密度电法和瞬变电磁法探测重点塌陷区域,简要介绍了高密度电法、瞬变电磁法的工作原理、方法特点、数据采集和数据处理,并对数据进行了解释,通过此次探测研究,取得了明显的成果。结果表明,两种方法相互验证,相互参照,相互补充,查明了塌陷区及其附近的覆盖层厚度、地质构造和地层岩性变化,为后期地面塌陷灾害治理提供了科学依据。     

基于超拉普拉斯先验的图像非盲解卷积

自然图像梯度的重尾分布在去噪、去模糊以及超分辨率等问题中已经被证实是一个非常有效的先验。自然图像梯度的长尾分布可以极好地用超拉普拉斯(Hyper-Laplacian)分布模型化。基于空间变化点扩散函数提出了一种超拉普拉斯先验的图像快速非盲解卷积方法,对图像进行复原。该算法的优势就是引入空间变化点扩散函数,使用分步交替迭代最小化方法,通过查表法快速对图像去卷积求解。该方法的解卷积速度得到较大幅度的提升,而且对模糊图像有较好的复原效果,提高了图像的质量。     

基于用户间影响力度量的网络信任模型研究

为了解决完全依靠公钥证书体系为动态变化的网络环境提供信任支撑存在较大局限性的问题,需要在信任领域引入新技术。由于网络信任计算中的信任问题和社交网络中的用户影响力问题具有一定的相关性且属性认证、隐私交互等都是需要解决的问题,因此将用户影响力引入网络信任领域具有一定的可行性。基于上述理论,本文提出了一种基于用户间影响力的网络信任计算模型。首先,论述了模型的相关基础理论和模型构架;然后,研究其工作过程,分析设计信任算法;最后,将模型的各项性能与几种经典模型进行对比和测试并通过对模型参数对比的理论分析验证了模型的可行性、安全性和高效性等。