Ni-Mo-O催化剂中协同作用对丙烷氧化脱氢的影响

在 Ni-Mo-O体系中 ,加入 Mo O3 能极大地提高丙烷氧化脱氢制丙烯的反应活性。选用固混法、沉淀法、柠檬酸法制备了 Mo O3 过量 1 5 % (摩尔分数 )的α -Ni Mo O4催化剂 ,其中用沉淀法制得催化剂在 5 0 0℃ ,V( C3 H8) /V ( O2 ) /V ( N2 ) =1 0 /1 0 /5 0 ,反应气流量为 70 m L/min的条件下丙烷转化率可达 38.7% ,丙烯选择性达 70 .1 4 %。经 XRD,XPS,TPR表征说明 ,在含有过量 Mo O3 的催化剂中 ,α -Ni Mo O4与 Mo O3 两种晶体之间可产生微小的相互吸引 ;从而发挥协同作用 ,是提高催化剂活性     

油田放射性作业人员外周血淋巴细胞染色体畸变的观察

本文调查了油田212例受γ射线和中子混合辐射照射的作业人员和30例正常人的外周血淋巴细胞染色体畸变。作业人员受γ射线照射的人均年受照剂量为1.28mGy。调查结果表明,放射性测井人员与正常人相比染色体畸变率有显著差异。     

CHARACTERIZATION OF Si_(1-x-y)Ge_xC_y FILMS GROWN BY ION IMPLANTATION AND SUBSEQUENT SOLID PHASE EPITAXY

Si1-x-yGexCy ternary alloy films were grown on monocrystalline silicon substrates by C ion implantation and subsequent solid phase epitaxy (SPE). Two-step anneal-ing technique was employed in the SPE. The structure and electrical properties of the alloy films were determined using Fourier transform infrared spectroscopy and van der Pauw Hall measurements, respectively. With the optimization of two-step anneal-ing technique for the implanted Si1-x-yGexCy layers, a certain amount of C atoms occupied substitutional sites and no SiC was formed.     

关于非线性浅水波理论中的孤立波解

本文在[1]的基础上,详尽地得到了Boussinesq方程和KdV方程的孤立波解,并对波高和波形进行了细致的分析。为了更好地比较,本文还给出了高阶摄动的孤立波解。     

圩区排涝模数计算方法研究

合理确定圩区排涝模数对于降低涝灾损失有重要意义。圩区内土地利用性质的不同,会导致产汇流机制和排涝标准的不同,但排涝模数的计算方法基本一致。本文根据圩区下垫面条件进行产汇流计算,入河流量扣除滞蓄量得到排涝模数,充分考虑到圩内河道的调蓄作用。以常熟市为例,对城镇圩区、农业圩区排涝模数进行计算,并分析了两种圩区不同的排涝要求对排涝模数计算方法的影响。     

我国有线电视事业的现状和发展

本文详细系统地介绍了我国有线是视发展历史和现状，及其经营和管理方法。重点介绍了北美的ＣＡＴＶ技术发展动向。最后，指出我国ＣＡＴＶ事业发展中的应用重视的问题。     

A Petri net based approach to modeling and scheduling for an FMSand a case study

In this paper, a timed-place Petri net (TPPN) model for flexible manufacturing systems (FMSs) is constructed, which contains two major submodels: the stationary transportation model; and the variable process flow model. For multiple automated guided vehicle (AGV) systems, the authors embed a simple rule and introduce a push-AGV strategy in a TPPN model to solve the collision and traffic jam problems of such vehicles. Since a firing sequence of the TPPN from the initial marking to the final marking can be seen as a schedule of the modeled FMS, by using an A^* based search algorithm, namely, the limited-expansion A algorithm, an effective schedule of the part processing can be obtained. To show the promising potential of the proposed work, a prototype FMS is used as a target system for implementation. The experiment results assert that the job-shop scheduling problem can always be satisfactorily solved     

Suppression of boron penetration in p+ polysilicon gateP-MOSFETs using low-temperature gate-oxide N2O anneal

It has been reported that high-temperature (~1100°C) N₂ O-annealed oxide can block boron penetration from poly-Si gates to the silicon substrate. However, this high-temperature step may be inappropriate for the low thermal budgets required of deep-submicron ULSI MOSFETs. Low-temperature (900~950°C) N₂O-annealed gate oxide is also a good barrier to boron penetration. For the first time, the change in channel doping profile due to compensation of arsenic and boron ionized impurities was resolved using MOS C-V measurement techniques. It was found that the higher the nitrogen concentration incorporated at Si/SiO₂ interface, the more effective is the suppression of boron penetration. The experimental results also suggest that, for 60~110 Å gate oxides, a certain amount of nitrogen (~2.2%) incorporated near the Si/SiO₂ interface is essential to effectively prevent boron diffusing into the underlying silicon substrate     

Numerical simulation model of vibration responses of rectangular plates embedded with piezoelectric actuators

A numerical simulation model for random large amplitude vibration control of composite plate using piezoelectric material is presented. The H_∞ control design is employed to suppress the large amplitude vibrations of composites plates under random loading. The numerical simulation model is developed and based on the finite element method. The finite element governing equation includes fully coupled structural and electrical nodal degrees of freedom, and consider the von Karman large amplitude vibration. The modal reduction method using the structural modes is adopted to reduce the finite element equations into a set of modal equations with fewer degrees of freedom. The modal equations are then employed for controller design and time domain simulation. In the simulations without control, the value of the linear mode to the nonlinear deflection is quantified; and the minimum number of linear modes needed for accurate model is obtained. In the simulations with control, it is shown that the truncated modes, which are neglected in the control design, deteriorate the controller performance. Generally, the vibration reduction level is not monotonically increasing with the size of the piezoelectric actuator. The optimal piezoelectric actuator size depends on the excitation level. For higher excitation level, optimal actuator size is larger. The H_∞ controller based on the linear finite element formulation gives better vibration reduction for small amplitude vibration, but it still gives reasonable performance for large amplitude vibration provided that the piezoelectric actuator is big and powerful enough.     

Mechanism analysis of gate-induced drain leakage in off-state n-MOSFET

An analytical expression for both band-to-band and band-trap-band indirect tunnelings is used to study the gate-induced drain leakage (GIDL) current of MOSFETs measured before and after hot-carrier stress. The voltage and temperature dependence of GIDL are characterized. Both results show that interface traps situated near the midgap participate in the conduction of GIDL, and band-trap-band indirect tunneling could be the major mechanism. This is further supported by the fact that the percentage increase in GIDL induced by hot-carrier stress is about the same as the corresponding increase in interface-trap density. On the other hand, under low-field conditions, trap-assisted Poole–Frenkle emission dominates over tunneling for temperatures even well below room temperature.