土工格栅与铜矿尾矿界面作用特性的实验研究

钢塑复合土工格栅的加筋效果好于其它筋材的原因在于其表面结构特性,在生产过程中塑料表面处理时,肋条压制成粗糙的花纹,以增强格栅表面的粗糙程度,提高CATT钢塑复合土工格栅与土体的摩擦系数。它与土之间不仅存在表面摩擦力,而且还存在镶嵌咬合力,从而增强加筋土体的稳定性。文中以不同规格的钢塑复合土工格栅作为加筋材料,以有色金属铜矿的尾矿作为填料土,通过拉拔实验,研究钢塑复合土工格栅与铜矿尾矿填料土的界面作用特性,获得了筋--土之间的剪切强度系数(C、φ)、似摩擦系数f*等结果,并对它们的影响因素进行了分析与探讨。     

喷射成形GCr15钢的实验研究

应用喷射成形技术制备了GCr15钢沉积坯,同时收集了过喷粉末.采用金相显微镜、扫描电镜等对二者进行了研究.结果表明,过喷粉末大部分呈规则球形,但也有一些呈特殊形态.沉积坯中有些部位存在孔隙,等轴晶为其特征组织,晶粒大小分布具有一定规律.     

Grain growth of Al-4Cu-Mg alloy during isothermal heat treatment

The microstructure of an Al-4Cu-Mg alloy during isothermal heat treatment in the Strain Induced Melt Activation （SIMA） process was investigated and the kinetics of grain growth was analyzed, The grain growth during isothermal heat treatment of the Al-4Cu-Mg alloy coincided with the Ostwald ripening theory. During isothermal heat treatment, both grain shape and the high volume fraction of solid phase have significant effects on grain growth. Therefore, a new grain growth model based on the Ostwald ripening theory was proposed taking into consideration the grain shape and the volume fraction of solid phase. By comparing the calculated results with the experimental results, it was confirmed that the present model could be applied to grain growth during isothermal heat treatment of the Al-4Cu-Mg alloy in the SIMA process.     

Influence of an emulsifier on the pressure desensitization of emulsion explosives

The desensitization degree of emulsion explosives （EE） was calculated with the peak pressure of explosion shock waves tested in water. To an explosive, the less the desensitization degree, the better the compression resistance, so the compression resistance of an explosive can be compared and analyzed quantificationally with the desensitization degree. The influence of an emulsifier on the pressure desensitization of EE was studied, including the content and category of emulsifiers. Three kinds of emulsifiers （Span-80, compound emulsifier, and T-152） were used in the tests. The experimental results show that both the content and category of emulsifiers make a great effect on the pressure desensitization of EE. The desensitization degree of EE reduces with the emulsifier content being increased, but there is an optimal content of an emulsifier for the compression resistance of EE. While the content of Span-80 reaches 4wt%, the desensitization degree of EE becomes a minimal value, and augments somewhat if the emulsifier content is increased more. That is to say, the compression resistance of EE becomes the highest while the content of Span-80 is 4wt%, and the compression resistance will decline if the content of Span-80 is increased more. The compression resistance of the explosive emulsified by compound emulsifier is the highest among all the explosives, when the content of the whole components and manufacturing engineering are kept invariable.     

一种重要抽样仿真方法的研究及应用

介绍了蒙特-卡洛仿真原理,分析了改进型的蒙特-卡洛仿真即重要抽样(IS)的原理及其在通信中的应用,特别是在高速光纤通信的偏振模色散(PMD)仿真中的应用价值.实验证明,采用重要抽样的仿真方法可以得到大差分群时延(DGD)值的小概率事件,并且系统配置比用蒙特-卡洛的仿真方法简单得多.     

Broadband high-efficiency circularly polarized active antenna and array for RF front-end application

This paper presents a broadband high-efficiency circularly polarized (CP) active integrated antenna, and a broadband CP active array at 2 GHz. To realize the broadband CP antenna, a circular patch is aperture coupled by crossed slots in the ground plane, which are fed by an L-shaped microstrip feed line below the ground. The antenna is designed to serve the functions of both a radiator and a harmonics-terminated load for class-E high-efficiency power-amplifier (PA) integration. The broadband CP active antenna is realized by directly integrating the broadband CP antenna with the class-E PA. It achieves a 9% bandwidth (1.84-2.01 GHz) for axial ratio (AR) below 3 dB, and a 12% bandwidth for power-added efficiency (PAE) over 60%. To form the broadband CP active array, four active antenna elements are sequentially rotated, and each element is directly integrated with broadband class-E PA. A low-cost printed-circuit-board technology is employed in fabrication and a pseudomorphic high electron-mobility transistor is used. A peak drain efficiency of 71.5% for the class-E amplifier is measured at 1.95 GHz. The active array achieves a peak-effective radiated power of 39.7 dBm, and PAE is over 50% within a 22.6% bandwidth (1.72-2.16 GHz). The AR is below 3 dB over a 27% bandwidth (1.72-2.26 GHz).     

Transient thermal analysis of sapphire wafers subjected to thermal shocks

Rapid heating and cooling are commonly encountered events in integrated circuit processing, which produce thermal shocks and consequent thermal stresses in wafers. The present paper studies the heat transfer in sapphire wafers during a thermal shock as well as the dependence of the wafer temperature on various process parameters. A three-dimensional finite-element model of a single sapphire wafer was developed to analyze the transient heat conduction in conjunction with the heat radiation and heat convection on the wafer surfaces. A silicon wafer was also investigated, for comparison. It was found that the rapid thermal loading leads to a parabolic radial temperature distribution, which induces thermal stresses even if the wafer is not mechanically restrained. The study predicted that for sapphire wafers the maximum furnace temperature of 800 /spl deg/C should be held for two hours in order to get a uniform temperature throughout the wafer.     

为调谐器设计的带自动幅度控制1.1GHz差分压控振荡器

为集成调谐器接收机芯片系统设计了一个带自动幅度控制回路的差分结构电容电感压控振荡器.通过采用pMOS管作为有源负阻使振荡器谐振回路可以直接接地电平,减小了寄生效应,扩大了频率调谐的线性及其范围.采用的自动幅度控制AAC回路具有元件少,噪声低,控制灵敏,调节容易,结构简单及设计方便的优点,并保证振荡器电路的性能最小地依赖于环境和制造工艺参数的变化.所设计的压控振荡器采用新加坡特许50GHz 0.35μm SiGe BiCMOS工艺流片,经测试在1MHz频率偏移处达到了-127.27dBc/Hz的相位噪声性能,具有宽的(990～1140MHz)和线性(调谐增益32.4MHz/V)的频率调谐曲线.整个振荡器电路在5V的供电电压下仅消耗6.6mA的电流,可以满足调谐器的应用需要.     

Low-cost, high-efficiency, and high-speed SiGe phototransistors in commercial BiCMOS

We present a new approach to obtain low-cost and high-performance SiGe phototransistors in a commercial BiCMOS process. Photoresponsivity of 2.7 A/W was obtained for 850-nm detection due to the transistor gain, corresponding to 393% quantum efficiency. Responsivities of 0.13 A/W and 0.07mA/W were achieved for 1060 and 1310 nm with SiGe absorption. With V/sub ce/=2 V, we measure a -3-dB bandwidth of up to 5.3 GHz for phototransistors with a 4-/spl mu/m/sup 2/ active area and 2.0 GHz for phototransistors with 60-/spl mu/m/sup 2/ active area and finger contacts. This high-efficiency and high-speed phototransistor is an enabling device for monolithic receiver integration.     

具有数据流和视频流的Internet的远程控制系统

提出了基于Internet的远程控制系统方案，能够在异地控制被控对象，通过数据流和视频流监控对象的运行状况。介绍了其硬件系统和软件系统的构成，讨论了远程控制系统中采用的通信技术。实验结果表明了该系统的可靠性和较高的实用价值。