Data analytics in wireless systems and IoT issues and challenges

The emergence of data engineering along with the support of Online Social Networks is growing by millions every day due to the introduction of wireless systems and Internet of Things. The rapid growth of usage of smart devices helps to create new generation knowledge sharing platforms. Data Analytics has a major role to play in the growth and success of wireless and IoT applications. The growth of data has become exponential and is difficult to analyze. Many researchers depend on the data available on Wireless Systems and IoT for developing new generation services and applications. With the opportunity of information and communication technologies like heterogeneous networking, cloud computing, web services, crowd sensing and data mining, ubiquitous and asynchronous information sharing is feasible. But this also brings out a lot of provocations with respect to conflicting standards, data portability, data aggregation, data distribution, differential context and communication overhead. The smart information and communication technology has changed many features of human lifestyle: personal and work places.     

Elastic-Plastic Analysis Under Proportional and Non-Proportional Loading Paths Using Deformation Plasticity Theory

Abstract

An estimation of elastic-plastic stresses and strains is presented for mechanical components, using pseudo elastic analysis based on the deformation theory of plasticity. Analysis of two applications, one under proportional loading and other under non-proportional loading paths using pseudo elastic finite element method, is presented. A rectangular plate with a hole under tension loading and a rectangular plate fixed at one end under bending-tension non-proportional loading are considered for analysis. Pseudo Elastic finite element analysis for proportional loading uses elastic solutions and varies material properties for elements in plastic zone to estimate elastic-plastic solution. A finite element code is developed based on pseudo elastic analysis method. An attempt is made to extend pseudo elastic analysis to analyze bending-tension non-proportional loading problem. Both applications in consideration are assumed to be of Von Mises material and follow isotropic hardening rule with elastic-linear hardening material model. Non-linear analysis of the plate with a hole under proportional tensile loading and that of rectangular plate under bending-tension non-proportional loading are performed in ANSYS and results are compared for validation and are observed to be in good agreement with present analysis.     

Growth and properties of Cu<Subscript>2</Subscript>ZnSnS<Subscript>4</Subscript> thin films prepared by multiple metallic layer stacks as a function of sulfurization time

In this paper, we report the two stage growth of Cu₂ZnSnS₄ (CZTS) thin films as a function of sulfurization time. First, magnetron sputtered metallic precursors were deposited sequentially (Zn/Cu/Sn/Cu) over rotating glass substrates held at 230?°C. Later, the sputtered precursors were heat treated at 500?°C in the ambiance of sulfur for various time durations in the range, 10–120 min. The sulfur treated samples were examined using various analytical tools to understand the role of sulfurization time on the CZTS growth and properties. From composition and structural analysis, Zn/Cu/Sn/Cu precursors sulfurized for shorter duration (10 and 20 min) revealed severe deficiency of sulfur that resulted in several metallic, bi-metallic and metal sulfide phases. With the increase of sulfurization time to 30 min, sulfur incorporation was enhanced and reached stoichiometric ratio (~50% S) for CZTS growth, however, samples were poorly crystalline in nature and consisted of prominent Cu_2?xS phase as well. The Zn/Cu/Sn/Cu precursors sulfurized for 60 min exhibited prominent CZTS phase without Cu_2?xS phase. Further, rise in sulfurization time to 120 min enabled drastic improvement in crystallinity of CZTS phase. Raman mapping over 60 µm × 60 µm for these films confirmed the homogeneous phase growth of CZTS. XPS study revealed the oxidation states of Cu¹⁺, Zn²⁺, Sn⁴⁺ and S^2? in CZTS films. The optimized films showed high absorption coefficient of 10⁵ cm^?1 with an optical band gap of 1.51 eV. These films showed leaf like grain morphology with high mobility and low resistivity of 18.2 cm²/V-s and 0.7 Ω-cm, respectively.     

Integration g-C3N4 nanotubes and Sb2MoO6 nanoparticles: Impressive photoactivity for tetracycline degradation,Cr (VI) reduction,and organic dyes removals under visible light

The development of high-efficiency photocatalysts is an attractive strategy for pollutants degradation under visible light. Herein, novel photocatalysts are reported through coupling Sb₂MoO₆ with g-C₃N₄ nanotube (abbreviated as GCN nanotube) by a simple reflux method. Also, the nanocomposites were defined by applying various analyses. Under visible-light excitation, the GCN nanotube/Sb₂MoO₆ systems had more photoactivity than g-C₃N₄ (abbreviated as GCN) and the rate constant for RhB removal on optimal GCN nanotube/Sb₂MoO₆ (30%) nanocomposite was 48.3 times premier than the GCN. Also, compared to the pristine GCN, the GCN nanotube/Sb₂MoO₆ (30%) sample demonstrated supreme photoactivity towards tetracycline degradation and Cr (VI) photoreduction, which was 88.5 and 21.8 times higher than the bulk GCN, respectively. These impressive enhancements were attributed to the quick segregation of charge carriers, boosted visible-light absorption, and extended specific surface area. Moreover, the photocatalyst has enough activity after four successive cycles. Finally, a conceivable charges transfer route is presented through n-n heterojunction constructed between Sb₂MoO₆ and GCN nanotube.     

Role of aluminum distribution on the growth of CuIn0.75Al0.25Se2 films and numerical simulation of p-CuIn0.75Al0.25Se2/n-CuAlSe2 heterojunction solar cell

Chalcopyrite thin films of CuIn_0.75Al_0.25Se₂ have been grown by a two-stage process containing e-beam evaporation of a threefold (In/Cu/Al/Se) precursor deposition onto glass substrates in a high vacuum followed by post selenization at various temperatures (300–550 °C) using a horizontal tubular furnace. The X-ray diffraction pattern of precursor layers selenized at?≤?525 °C shows the formation of co-existence of CuInSe₂ and Cu(In,Al)Se₂ phases, as well as a mixture of two Cu(In,Al)Se₂ phases with different Al content. The precursor layers selenized at 550 °C results in the formation of single-phase Cu(In,Al)Se₂ thin films. The presence of an intense A₁ mode at 174.7 cm^?1 in the Raman spectra of selenized films at 550 °C confirms the growth of Cu(In,Al)Se₂ phase. The energy-dispersive spectra of stacked layers selenized at 550 °C shows a Cu-poor and (In?+?Al)-rich composition with atomic ratios of Cu/(In?+?Al)?=?0.79, Al/(In?+?Al)?=?0.25, and Se/(Cu?+?In?+?Al)?=?0.98. The secondary ion mass spectra depth study reveals a shift in Al distribution from graded to uniform with an increase in selenization temperature to 550 °C. The stacked layers selenized at 550 °C reveal a uniform distribution of void-free dense grains (~?0.7 μm). Optical and electrical studies of selenized Cu(In,Al)Se₂ films at 550 °C show a direct band gap of 1.22 eV with a higher hole mobility of 14.0 cm²/V-s. The heterojunction solar cell of p-Cu(In,Al)Se₂/n-CuAlSe₂ was numerically simulated using SCAPS-1D software, yielding a high power conversion efficiency (η) of 21.01%.

     

Design and implementation of low complexity circularly symmetric 2D FIR filter architectures

Multidimensional Systems and Signal Processing - This paper presents a low complexity two dimensional (2D) circular symmetric Finite Impulse Response (FIR) filter design and implementation of...     

Estimation of Effect of Fog on Terrestrial Free Space Optical Communication Link

Wireless Personal Communications - Free Space Optical Communication Technology is expected as the successor to the existing communication technologies as many of its features like high bandwidth,...     

Performance Analysis of Modulation Recognition in Multipath Fading Channels using Pattern Recognition Classifiers

Wireless Personal Communications - Implementation of adaptive modulation techniques based on the channel conditions play a key role in future wireless applications. Due to these adaptive...     

Design and analysis of low power high-speed 1-bit full adder cells for VLSI applications

This paper presents a low power and high speed two hybrid 1-bit full adder cells employing both pass transistor and transmission gate logics. These designs aim to minimise power dissipation and reduce transistor count while at the same time reducing the propagation delay. The proposed full adder circuits utilise 16 and 14 transistors to achieve a compact circuit design. For 1.2 V supply voltage at 0.18-μm CMOS technology, the power consumption is 4.266 μW was found to be extremely low with lower propagation delay 214.65 ps and power-delay product (PDP) of 0.9156 fJ by the deliberate use of CMOS inverters and strong transmission gates. The results of the simulation illustrate the superiority of the newly designed 1-bit adder circuits against the reported conservative adder structures in terms of power, delay, power delay product (PDP) and a transistor count. The implementation of 8-bit ripple carry adder in view of proposed full adders are finally verified and was observed to be working efficiently with only 1.411 ns delay. The performance of the proposed circuits was examined using Mentor Graphics Schematic Composer at 1.2 V single ended supply voltage and the model parameters of a TSMC 0.18-μm CMOS.