锥形件拉深压边力数学模型的建立

本文用逐步选择因素组合法，对锥形件拉深临界压边力试验数据进行了处理，所得数学模型比一般逐步回归法具有更高的精度和可靠性，模型更为完善。     

注水开发油田砂砾岩储层含油饱和度解释模型

本文利用常规测井资料,结合储层岩性、物性、含油性之间的地质规律,解决了储层岩石粒度变化及水淹层混合水电阻率变化对储层电阻率的影响;研究出了一种对电阻率测井资料标准化的校正方法;建立了储层原始、剩余、残余油饱和度解释模型。计算的储层原始、剩余、残余油地质储量,经生产验证相对下误差小于10％;计算产水率,试油验证平均绝对误差小于10％;划分水淹油层等级,试油验证符合率在80％以上。     

流动微量量热法研究阴离子表面活性剂在油砂表面的吸附

用流动微量量热法研究了十二烷基硫酸钠(SDDS)和十二碳羧酸钠(SL)在克拉玛依油田九区和乌尔禾区油砂上的吸附,简要地计论了吸附机理。所得实验结果表明,SL 在油砂上的吸附强度比 SDDS 的要大,在相当低的浓度下即可迟到饱和吸附。     

Dynamic oxide voltage relaxation spectroscopy

A new method for trap characterization of oxidized silicon is described. The Dynamic Oxide Voltage Relaxation Spectroscopy (DOVRS) is an improved version of the formerly proposed Oxide Voltage Relaxation Spectroscopy (OVRS) technique which applies a periodic long duration constant current for tunneling injection. It has been demonstrated that the new technique can be used not only to separate and identify the oxide trap from interface trap, but also to separate and determine the centroid from the oxide trap density generated in the MOS system by the tunneling current stress. In the pulse constant current mode, the OVRS measurement can be completed instead of using the double current-voltage technique. Thus the new method results in more accurate and quicker measurements of the oxide trap centroid. Analytical expressions for computing the paramaters of the interface and oxide traps are derived. The effect of the channel carrier mobility on the spectroscopy is also considered. Two types of oxide and two types of interface traps were observed at a pulse constant Fowler-Nordheim current stress by the new method of DOVRS     

Expert system application for the loading capability assessment oftransmission lines

This paper describes the application of an expert system for the evaluation of the short-term thermal rating and temperature rise of overhead conductors. The expert system has been developed using a database and Leonardo expert system shell which is gaining popularity among commercial tools for developing expert system applications. The expert system has been found to compare well when evaluated against site tests. A practical application is given to demonstrate the usefulness of the expert system developed     

Usefulness and limitations of thyrotropin measurements as a first-line test for follow-up of Graves'' patients

Although the good appearance and biocompatibility of dental porcelains, failures are still of considerable concern because of the limited properties to all ceramic system. Physical properties that might be considered ideal include high strength, resistance to abrasion, and resistance to the hostile oral environment. Porcelain has been considered by many of its physical characteristic are similar to those of enamel. In 1983 a new modality of treatment, the etched porcelain restoration was introduced by Simonsen and Calamia. Numerous investigations have shown the strength of the etched porcelain bonded to composite resin and also the clinical success of this porcelain to be used as laminated veneers and etched inlays and onlays.     

Low-temperature growth of silicon-boron layer as solid diffusionsource for polysilicon contacted p+-n shallow junction

A new material, Si-B, is proposed as a solid diffusion source for fabrication of poly-Si contacted p⁺-n shallow junctions. The junction depth of the Si-B source diode has been measured and compared with that of a BF₂⁺-implanted poly-Si source diode. It was found that the Si-B source diode had a much shallower junction and was less sensitive to thermal budget than the BF₂⁺ source diode. This was attributed to the smaller surface concentration and diffusivity of boron in the silicon in Si-B source diodes. Regarding electrical characteristics of diodes with a junction depth over 500 Å, a forward ideality factor of better than 1.01 over 8 decades and a reverse-current density lower than 0.5 nA/cm² at -5 V were obtained. As the junction depth shrank to 300 Å, the ideality factor and reverse current density of diodes increased slightly to 1.05 and 1.16 nA/cm², respectively. These results demonstrated that a uniform ultrashallow p⁺-n junction can be obtained by using a thin Si-B layer as a diffusion source     

充水正装法在大型储罐施工中的应用更新

为减免钢架的投入,我们对"充水正装法"工艺进行改进,利用水浮法保证了单盘的向心度,也节省了资源投入,缩短了工期,取得了较好的效果。