Transformations for nonideal uniform circular arrays operating in correlated signal environments

The Davies transformation is a method to transform the steering vector of a uniform circular array (UCA) to one with Vandermonde form. As such, it allows techniques such as spatial smoothing for direction-of-arrival (DOA) estimation in a correlated signal environment, developed originally for uniform linear arrays, to be applied to UCAs. However, the Davies transformation can be highly sensitive to perturbations of the underlying array model. This paper presents a method for deriving a more robust transformation using optimization techniques. The effectiveness of the method is illustrated through a number of DOA estimation examples.     

Formation and elimination of surface ion milling defects in cadmium telluride,zinc sulphide and zinc selenide

The nature of damage produced by low energy Ar⁺ ion and Ar atom milling in the II–VI semiconductors CdTe, ZnS and ZnSe is studied in detail by conventional and high resolution transmission electron microscopy. It is demonstrated that the damage consists of dense arrays of small dislocation loops near to each milled surface. When ion or atom milling of this type is used for thin specimen preparation prior to microscopy the loop arrays can seriously obscure images and so complicate their interpretation. This problem concerning the presence of artifactual defects can be greatly reduced by the use of reactive I⁺ ion milling for specimen thinning and, in the case of CdTe, spurious dislocation loop formation can be completely suppressed.     

Subcutaneous zygomycosis due to Saksenaea vasiformis: rapid isolate identification using a modified sporulation technique

Saksenaea vasiformis, a zygomycete belonging to the order Mucorales, is a rare cause of zygomycosis with 17 cases documented world-wide. It usually infects the immunocompromised or traumatized and has a high mortality rate. Because of its failure to sporulate under normal laboratory conditions it may be difficult to identify. We describe here an unusual case report of Saksenaea vasiformis with sporulation and identification within a week using a modified sporulation technique.     

I-slot characteristics

I-shaped slots will fit entirely on the rectangular waveguide narrow wall without wrapping onto the broad wall. This slot type is suitable for single plane scan-phased arrays where element spacing, in the scan plane, is equal to or less than one-half wavelength. The method of moments solution for the I-slot is presented. Comparison of computed results with measured data illustrates the validity of this solution. To facilitate future designs, the waveguide scattering parameters and the radiation characteristics of I-slots are included     

Fracture behaviour of unmodified and rubber-modified epoxies under hydrostatic pressure

The fracture toughness and uniaxial tensile yield strengths of unmodified and CTBN-rubber-modified epoxies were measured under hydrostatic pressure. The purpose of these experiments was to learn how suppressing cavitation in rubber particles affects the deformation mechanisms and the fracture toughness of rubber-modified epoxy. It was found that the cavitation of CTBN-rubber could be suppressed at a relatively low pressure (between 30 and 38 M Pa). With cavitation suppressed, the rubber particles are unable to induce massive shearyielding in the epoxy matrix, and the fracture toughness of the rubber-modified epoxy is no higher than that of the unmodified epoxy in the pressure range studied. Unmodified epoxy shows a brittle-to-ductile transition in fracture toughness test. The reason for this transition is the postponement of the cracking process by applied pressure.Work performed while on a sabbatical leave at the University of Michigan.     

Modeling low-frequency electrode-type resistivity tools in invadedthin beds

The authors formulate and implement a numerical mode-matching (NMM) method to model electrode-type resistivity tools in invaded thin beds. The authors derive the low-frequency approximation of the Maxwell's equations to obtain the partial differential equation for the potential field. The new NMM program is validated by comparing the numerical results with those obtained from other dc programs. It is found that this new program is much faster than the program using the finite-element method (FEM), and hence is useful for routine interpretation of resistivity logs and for inversion     

Trade-off analysis on cost and manufacturing technology of an electronic product: Case study

A trade-off analysis on the cost and system packaging metrics of an electronic product aimed at the commercial/retail industry has been carried out. By comparing the system cost and packaging metrics with those of comparable consumer products, we have determined that there is opportunity for significant cost, size, and weight reduction of the overall electronics packaging system. These include the use of fine pitch IC packages, smaller discrete components, denser PCB wiring technology, double sided IC package surface mount, surface mount connectors, and improved plastics for the product housing. The analysis concluded that PCB area reduction of 40%, using a single PCB instead of three boards, reduction in board cost of over 50% and product weight reduction of over 28% are possible using available technologies.     

Characterization of the bioactive form and molecular determinants of recognition of cyclic enkephalin peptides at the delta-opioid receptor

An extensive and systematic search strategy to determine the conformational profile of 12 cyclic disulfide-bridged opioid peptides with varying affinities at the delta receptor has been carried out to identify the structure that is recognized by the delta receptor for each analogue. The methods and procedures used here for the conformational search have already been validated for [D-Pen2,D-Pen5] enkephalin (DPDPE), one member of this family. Use of these methods led to a low-energy solution conformation of DPDPE in excellent agreement with all the geometric properties deduced from its solution nmr spectra. Each of the analogue was subjected to the same procedure, involving a combination of molecular dynamics simulations at high and low temperature. The study was repeated in two environmental conditions, an apolar environment, simulated by using a distance-dependent dielectric constant, and a polar environment by embedding the peptides in a high constant dielectric (epsilon = 80). An automated comparison of the different conformers based on their backbone rms and average distance between the key aromatic moieties was followed by graphic analysis using maximum structural overlap. The cross-comparison of the conformations for each analogue revealed a unique conformer that may be recognized by the delta receptor for each high-affinity analogue that permitted maintaining the critical elements required for recognition in a simple spatial orientation, while maximizing similarity in other regions.     

Characterization and comparison of PECVD silicon nitride and silicon oxynitride dielectric for MIM capacitors

In this letter, we report on the electrical characteristic and the comparison of the metal-insulator-metal (MIM) capacitors with PECVD silicon nitride (SiN) and silicon oxynitride (SiON). Both capacitors are found to exhibit low leakage and high breakdown field strength, as well as absence of dispersive behavior, good linearity, and comparable quality factor behaviors.     

Impact of nonuniform graded dopant profile in polysilicon gate on gate leakage current

In a MOSFET, a nonuniform, graded vertical dopant profile in the polysilicon gate causes a potential drop at the polysilicon/oxide interface. In this paper, the effect of this potential drop on the gate leakage current has been evaluated for the first time. The extent of variations of this affected gate leakage current with gate oxide thickness, gate length, and gate and drain bias conditions have been assessed with device simulation for an nMOS at 0.13 /spl mu/m low-voltage process. The results provide a guideline to the severity of this effect from the point of view of device and circuit operation and standby power consumption.