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11.
A compact, high-resolution analog-to-digital converter (ADC) especially for sensors is presented. The basic structure is a completely digital circuit including a ring-delay-line with delay units (DUs), along with a frequency counter, latch, and encoder. The operating principles are: (1) the delay time of the DU is modulated by the analog-to-digital (A/D) conversion voltage and (2) the delay pulse passes through a number of DUs within a sampling (= integration) time and the number of DUs through which the delay pulse passes is output as conversion data. Compact size and high resolution were realized with an ADC having a circuit area of 0.45 mm/sup 2/ (0.8-/spl mu/m CMOS) and a resolution of 12 /spl mu/V (10 kS/s). Its nonlinearity is /spl plusmn/0.1% FS per 200-mV span (1.8-2.0 V), for 14-b resolution. Sample holds are unnecessary and a low-pass filter function removes high-frequency noise simultaneously with A/D conversion. Thus, the combination of this ADC and a digital filter that follows can eliminate an analog prefilter to prevent the aliasing before A/D conversion. Also, both this ADC can be shrunk and operated at low voltages, so it is an ideal means to lower the cost and power consumption. Drift errors can be easily compensated for by digital processing.  相似文献   
12.
Summary The effect of side chain length on intramolecular triplet energy migration of naphthalene containing polymers was investigated by a delayed fluorescence (DF) spectroscopy for the solid solution of the polymers. The degree of triplet energy migration depends strongly on whether the chromophores are directly attached to the main chain or not.  相似文献   
13.
Makino  T. 《Electronics letters》1995,31(18):1579-1581
The sidemode suppression ratio of gain-coupled DFB lasers with periodically etched quantum wells is analysed by a more accurate model for amplified spontaneous emission. It is shown that the periodic etching of quantum wells is very effective for providing a high side-mode suppression. The mechanism for the high singlemode stability is explained by the effective modal gain. which has an enhancement at the longer wavelength side of the Bragg stopband  相似文献   
14.
We propose combined distributed-feedback/Fabry-Perot (DFB/FP) structures for surface-emitting semiconductor lasers. The analysis is based on coupled-wave equations modified for surface-emitting lasers. The proposed structures, which exhibit enhanced resonance due to a matching between the gain and field distributions resulting in a reduced threshold compared with simple FP structures, are formed by placing the DFB structure between two DBR mirrors of an FP resonant cavity and introducing phase layers between the DFB region and the mirrors. It was found that the periodic-gain structures are a special case of the combined DFB/FP structures in which the index coupling effect is assumed to be negligible due to a small fill factor or a small refractive-index difference. The effect of complex (gain and index) coupling on the design and the threshold characteristics of the structures is clearly illustrated. Some important design considerations that were neglected in the previous papers are addressed  相似文献   
15.
Rare-earth-doped oxynitride or nitride compounds have been reported to be luminescent and may then serve as new phosphors with good thermal and chemical stabilities. In this work, we report the photoluminescence (PL) spectra of europium-, terbium-, and praseodymium-doped Ca-α-SiAlON ceramics. The highly dense ceramics were prepared by hot pressing at 1750°C for 1 h under 20 MPa in a nitrogen atmosphere. Europium-doped Ca-α-SiAlON displayed a single broad emission band peaking at λ= 550–590 nm depending on the europium concentration. The emission bands in the spectra of europium-doped Ca-α-SiAlONs were assigned to the allowed transition of Eu2+ from the lowest crystal field component of 4 f 65 d to 8S7/2 (4 f 7) ground-state level. The emission spectra of terbium- and praseodymium-doped Ca-α-SiAlON ceramics both consisted of several sharp lines, which were attributed to the 5D47F j ( j = 3, 4, 5, 6) transitions of Tb3+ and 3P03H j ( j = 3, 4, 5) transitions of Pr3+, respectively. In particular, the terbium-doped α-SiAlON ceramics showed a strong green emission among these phosphors.  相似文献   
16.
The beam divergence in the vertical direction from a graded index separate confinement heterostructure (GRINSCH) multiquantum-well (MQW) laser has been studied. It is demonstrated both theoretically and experimentally that a circular beam MQW laser can be produced by choosing appropriate thicknesses for the GRINSCH layers, while maintaining other desired laser characteristics. The beam divergence is found to be more affected by the index change induced by injected carriers than by strain in the MQW active layer. Theoretical results are in good agreement with the measurements for 1.3-μm InGaAsP strained MQW lasers  相似文献   
17.
63 nm continuous signal band of a 1.5 Tbit/s (75/spl times/20 Gbit/s) dense wavelength division multiplexed transmission over 200 km was demonstrated by applying Er/sup 3+/-doped tellurite fibre amplifiers.  相似文献   
18.
The structural and electrochemical properties of LiNiO2 powders were investigated as a function of the oxygen flow rate employed in the preparation of lithium nickel oxide. It was found that oxygen played an important role in the synthesis of highly crystallized LiNiO2(Rm). In the crystallization process of LiNiO2, a deficiency of oxygen in the calcination reactor induced the formation of impurities and cubic rock-salt structure (Fm3m) in LiNiO2 powders. For LiNiO2 prepared at higher oxygen flow rates, the electrode delivered high discharge capacities with relatively good retention rates. But very low electrode capacity was obtained from LiNiO2 prepared at lower oxygen flow rates.  相似文献   
19.
20.
Single-mode and high-power operation at temperatures up to 120°C has been achieved in 1.3-μm strained MQW gain-coupled DFB lasers. A stable lasing wavelength is maintained due to a large modal facet loss difference of the two Bragg modes, which is provided by the gain-coupling effect. A very low temperature dependence of the threshold current has been obtained by detuning the lasing wavelength to the long wavelength side of the material gain peak at room temperature, which effectively compensates the waveguide loss at higher temperatures. An infinite characteristic temperature To can be realized at certain ranges of temperature depending on the detuning value  相似文献   
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