Electrophoretic Deposition Behavior of Aqueous Nanosized Zinc Oxide Suspensions

The rheological behavior and electrophoretic deposition (EPD) of ZnO nanopowder (nano-ZnO) in aqueous media have been described. A cationic polyelectrolyte (polyethylenimine, PEI) was used to disperse and modify the surfaces of the ZnO nanoparticles. The rheological properties of the ZnO aqueous suspension were investigated by measuring the viscosity versus the pH and amount of dispersant. The EPD processing was conducted via cathodic electrodeposition, using stable suspensions with low viscosity, and the depositional behavior was investigated. Bubble-free nano-ZnO deposits with uniform microstructures were successfully obtained, which was an indication of good sintering behavior.     

A high resolution negative working resist,LMR-UV,for g- and i-line lithography

LMR-UV (“low molecular weight resist for uv lithography”), a naphthoquinone-diazide sulfonic acid ester of a novolak resin, is a negative working resist. The mechanism of insolubilization of LMR-UV is based on the facts that the naphthoquinone-diazide moiety is decomposed to indenecarboxylic acid (polar compound) by photolysis upon UV irradiation and that the irradiated resist film insolubilizes in a non-polar developer. LMR-UV reliably forms 0.6 μm lines and spaces over a reflective substrate with steps by using a g-line stepper having a 0.35 NA lens. 0.6 μm-wide aluminum patterns over topography are obtained by use of g-line exposure and reactive ion etching. By use of an i-line aligner (NA = 0.42), LMR-UV resolves 0.25 μm space patterns with overhang profiles. The profiles are due to the large absorption coefficient of 3.8 μm^?1. 0.3 μm wide aluminum patterns are formed by i-line exposure and lift-off metallization.     

Relation between microstructure, properties and spark plasma sintering (SPS) parameters of pure ultrafine WC powder

A combined experimental/numerical methodology is developed to fully consolidate pure ultrafine WC powder under a current-control mode. Three applied currents, 1900, 2100 and 2700 A, and a constant pressure of 20 MPa were employed as process conditions. The developed spark plasma sintering (SPS) finite-element model includes a moving-mesh technique to account for the contact resistance change due to sintering shrinkage and punch sliding. The effects of the heating rate on the microstructure and hardness were investigated in detail along the sample radius from both experimental and modeling points of view. The maximum hardness (2700 HV10) was achieved for a current of 1900 A at the core sample, while the maximum densification was achieved for 2100 and 2700 A. A direct relationship between the compact microstructure and both the sintering temperature and the heating rate was established.     

Fluorescence in situ hybridization analysis of chromosome 1p36 deletions in human MYCN amplified neuroblastoma

Artificial illumination is an important factor in the management of layers. In this study, a new monochromatic light system was developed for egg layers. Prelaying pullets (Lohmann) were marked and housed in nine light and temperature control rooms (15 battery cages, 3 hens per cage; n = 45), divided into three light treatments: 0.1 and 0.01 W/m2 light intensity using light emitting diode (LED) lamps and 0.1 W/m2 using mini-fluorescent bulbs (PL) (control). In each of the LED rooms, three wavelengths were tested: 560 (n = 9), 660 (n = 9), 880 (n = 6), and 660 intermitted lighting (15 min light 45 min dark, 660IN) (n = 9). Birds were exposed to 12 h light and 12 h of darkness using PL lamps. At 21 wk of age, the light period was increased to 12.75 h by using 5.5 h of LED lamps and 7.25 of PL light source for Groups 1 and 2, the third group received 12.75 h of PL light. Until 28 wk of age, light hours increased by 0.5 h/w using LED light for Groups 1 and 2 and PL source for the third group, reaching 16 h of light at 28 wk of age. Egg production and feed consumption were recorded daily; egg components were recorded weekly for 10 mo. A significant reduction in egg production was observed in all 880nm groups; no differences in egg production and quality were found in the other groups. Feed consumption was significantly lower by 7% in all 0.01 W/m2 groups. We suggest that an important reduction in rearing costs of laying hens may be obtained by using this system.     

Spontaneous emission model of surface-emitting DFB semiconductorlasers

A general spontaneous emission model is developed for surface-emitting (SE) distributed feedback (DFB) semiconductor lasers. The frequency distribution of spontaneous emission noise below lasing threshold and the spontaneous emission rate in lasing operation are formulated by using a transfer matrix method combined with the Green's function method. The effective linewidth enhancement factor is obtained from this model in terms of the elements of the transfer matrix. By way of example, the author applies the formulation to a standard SE DFB laser, and a SE λ/4-shifted DFB laser with a distributed Bragg reflector (DBR) mirror. In particular, the author analyzes the below-threshold spectrum, the threshold current density, the differential quantum efficiency, and the spectral linewidth of these lasers     

Properties of Va metal-B films prepared by r.f.-sputtering

Ta_100-x B _x alloy films were prepared by r.f.-sputtering in the chemical composition range 45 x 77. Ta_100-x B _x (45 x 58) films consist of the amorphous phase, while the TaB₂ crystal phase was observed in Ta_100-x B _x (66 x 77) films. A remarkable preferred orientation with the (001) plane of TaB₂ parallel to the film surface was observed in Ta₃₄B₆₆. The d.c. electrical conductivity of Ta_100-x B _x (45 x 77) films decreases with increasing boron content in the range 6.7 × 10³ to 1.3 × 10^3–1 cm^–1. The micro-Vickers hardness of Ta_100-x B _x (45 x 77) films was in the range 2200 to 2600 kg mm^–2.     

Preparation of Co-N films by rf-sputtering

Co-N films in the wide compositional range can be prepared by reactive sputtering. Co-N sputtered films consist of one or two phases, such as CoN, Co₂N, Co₃N, Co₄N and -Co. Co₄N phase with a cubic unit cell is observed, and its lattice constant isa = 0.3586 nm. The preferred orientation is observed on the Co-N films, CoN (200) plane, Co₄N (1 1 1) plane and -Co (002) plane parallel to the film surface, respectively. Saturation magnetization _s of Co-N sputtered film decreases from 160 to 1.7 e.m.u. g^–1 with increasing content of N from 0 to 21.7 at%, and coercive force_I H _c is the range of 43 to 5000e at room temperature.     

Junction properties of polypyrrole containing a small amount of poly(ethylene oxide) with indium

A method to generate a porous region near the surface of a polymer is suggested. In this method the region near the surface is swollen by immersing the polymer for a short time in a solvent. Subsequently, the polymer is introduced in a nonsolvent (for the polymer) that is, however, miscible with the solvent. The formation of the porous region is a result of (1) the swelling accompanied by the disentanglement of the surface molecular chains, and the dissolution of some of them during the immersion in the solvent, and (2) the rapid extraction of the solvent from the swollen region by the nonsolvent. The porous surface provides a matrix into which a second incompatible monomer can be polymerized so that the two otherwise incompatible polymers can adhere to one another.     

Augmenting Edge-Connectivity between Vertex Subsets

Given a directed or undirected graph G=(V,E), a collection ${\mathcal{R}}=\{(S_{i},T_{i}) \mid i=1,2,\ldots,|{\mathcal{R}}|, S_{i},T_{i} \subseteq V, S_{i} \cap T_{i} =\emptyset\}$ of two disjoint subsets of V, and a requirement function $r: {\mathcal{R}} \to\mathbb{R}_{+}$ , we consider the problem (called area-to-area edge-connectivity augmentation problem) of augmenting G by a smallest number of new edges so that the resulting graph $\hat{G}$ satisfies $d_{\hat{G}}(X)\geq r(S,T)$ for all X?V, $(S,T) \in{\mathcal{R}}$ with S?X?V?T, where d _G (X) denotes the degree of a vertex set X in G. This problem can be regarded as a natural generalization of the global, local, and node-to-area edge-connectivity augmentation problems. In this paper, we show that there exists a constant c such that the problem is inapproximable within a ratio of $c\log{|{\mathcal{R}}|}$ , unless P=NP, even restricted to the directed global node-to-area edge-connectivity augmentation or undirected local node-to-area edge-connectivity augmentation. We also provide an ${\mathrm{O}}(\log{|{\mathcal{R}}|})$ -approximation algorithm for the area-to-area edge-connectivity augmentation problem, which is a natural extension of Kortsarz and Nutov’s algorithm (Kortsarz and Nutov, J. Comput. Syst. Sci., 74:662–670, 2008). This together with the negative result implies that the problem is ${\varTheta}(\log{|{\mathcal{R}}|})$ -approximable, unless P=NP, which solves open problems for node-to-area edge-connectivity augmentation in Ishii et al. (Algorithmica, 56:413–436, 2010), Ishii and Hagiwara (Discrete Appl. Math., 154:2307–2329, 2006), Miwa and Ito (J. Oper. Res. Soc. Jpn., 47:224–243, 2004). Furthermore, we characterize the node-to-area and area-to-area edge-connectivity augmentation problems as the augmentation problems with modulotone and k-modulotone functions.