Efficiency improvements in US office equipment: Expected policy impacts and uncertainties

We create a business as usual scenario for office equipment electricity use from industry forecasts of equipment sales, surveys of equipment densities by building type, measured data on wattage and usage by equipment type and projected lifetimes for equipment. We then calculate electricity used by building type and equipment type for Energy Star and advanced scenarios and explore the sensitivity of these results to variations in key input parameters. According to our analysis, the Energy Star programme will save the US almost US$1 billion annually starting in the year 2000, with minimal expenditure of public funds.     

A comparison of CCS tandem overload controls

In this paper we analyse issues associated with overloads in tandem switching systems in Common Channel Signalling (CCS) networks. In particular, we examine the need for, and effectiveness of, Automatic Congestion Control (ACC), a CCS mechanism which allows a congested switching system to inform adjacent CCS nodes of its level of overload, and subsequently controls the rate at which traffic is sent to the congested node. We demonstrate the critical need for end-offices and tandem switching systems to implement some form of ACC if network performance is to be maintained during congestion, especially in tandem exchanges. In addition, we find that the presently defined ACC should be expanded to allow more levels of congestion to be reported to adjacent nodes, so that a more effective, finer grained control is produced.     

Mullite Formation by Endothermic Reaction of α-Alumina/Silica Microcomposite Particles

The formation of mullite was investigated using microcomposite powders which consist of α-alumina cores and amorphous silica coatings. Differential thermal analysis and X-ray diffraction showed that the mullitization reaction was endothermic. In contrast, mullite forms exothermically in samples prepared by sol-gel processing. The results are shown to be consistent with available thermodynamic data for mullite formation from different alumina and silica phases.     

Synthesis of heterocyclic metal complexes and their evaluation as marine antifoulants

4-Amino-3-thio-1,24-triazolidine (L₁) and 4-amino-5-thio-1,3,4-thiadiazole (L_II) as well as their metal complexes of the general formulae ML_I·2H₂O and ML_IICl (M; Pb(II), Cd(II) and Zn(II)) were prepared. With Sn(II), we obtained Sn(L_I)₂·2H₂O and SnL_IICl, respectively. The structures of the compounds were identified through elemental analysis, and IR and UV spectra measurements, in addition to thermal analysis in case of the metal complexes. The antifouling properties of the compounds were tested by their incorporation into paint formulations which were applied to PVC substrates and tested in water from Alexandria western harbour. When the compounds were added at 17·5% by volume, the coated panels were fouled after 3 months of immersion. The addition of 6·7% by volume of tributyltin oxide to 15·8% of the prepared compounds in one formulation elevated the paint efficiency and prevented fouling for 11 months. Paint containing solely tributyltin oxide at the same concentration was inactive against algae.     

GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition

In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky rectifiers grown on both sapphire and SiC substrates by metal-organic chemical-vapor deposition. For GaN p-i-n rectifiers grown on SiC with a relatively thin “i” region of 2 μm, a breakdown voltage over 400 V, and forward voltage as low as 4.5 V at 100 A/cm² are exhibited for a 60-μm-diameter device. A GaN Schottky diode with a 2-μm-thick undoped layer exhibits a blocking voltage in excess of ∼230 V at a reverse-leakage current density below 1 mA/cm², and a forward-voltage drop of 3.5 V at a current density of 100 A/cm². It has been found that with the same device structure and process approach, the leakage current of a device grown on a SiC substrate is much lower than a device grown on a sapphire substrate. The use of Mg ion implantation for p-guard rings as planar-edge terminations in mesageometry GaN Schottky rectifiers has also been studied.     

A closer look at mutation in genetic algorithms

This paper examines the influence of mutation on the behavior of genetic algorithms through a series of examples and experiments. The results provide an existence proof that mutation is a far more profound operator than has ever been recognized. Implications are discussed which point to the importance of open questions concerning genetic algorithms. The paper also reviews the implementation of the infinite population model of Vose which forms the computational basis of this investigation.     

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