全文获取类型
收费全文 | 86篇 |
免费 | 9篇 |
国内免费 | 21篇 |
专业分类
电工技术 | 7篇 |
综合类 | 9篇 |
化学工业 | 11篇 |
金属工艺 | 3篇 |
机械仪表 | 6篇 |
建筑科学 | 7篇 |
能源动力 | 2篇 |
水利工程 | 14篇 |
石油天然气 | 1篇 |
无线电 | 34篇 |
一般工业技术 | 12篇 |
原子能技术 | 2篇 |
自动化技术 | 8篇 |
出版年
2023年 | 1篇 |
2022年 | 4篇 |
2021年 | 1篇 |
2020年 | 5篇 |
2019年 | 4篇 |
2018年 | 2篇 |
2017年 | 5篇 |
2016年 | 5篇 |
2015年 | 3篇 |
2014年 | 5篇 |
2013年 | 5篇 |
2012年 | 5篇 |
2011年 | 7篇 |
2010年 | 13篇 |
2009年 | 1篇 |
2008年 | 2篇 |
2007年 | 1篇 |
2006年 | 8篇 |
2005年 | 9篇 |
2004年 | 1篇 |
2003年 | 6篇 |
2002年 | 4篇 |
2001年 | 2篇 |
2000年 | 2篇 |
1998年 | 2篇 |
1997年 | 2篇 |
1995年 | 2篇 |
1994年 | 2篇 |
1993年 | 2篇 |
1992年 | 3篇 |
1991年 | 2篇 |
排序方式: 共有116条查询结果,搜索用时 46 毫秒
21.
Recently, triboelectric nanogenerators (TENGs), as a collection technology with characteristics of high reliability, high energy density and low cost, has attracted more and more attention. However, the energy coming from TENGs needs to be stored in a storage unit effectively due to its unstable ac output. The traditional energy storage circuit has an extremely low energy storage efficiency for TENGs because of their high internal impedance. This paper presents a new power management circuit used to optimize the energy using efficiency of TENGs, and realize large load capacity. The power management circuit mainly includes rectification storage circuit and DC-DC management circuit. A rotating TENG with maximal energy output of 106 mW at 170 rpm based on PCB is used for the experimental verification. Experimental results show that the power energy transforming to the storage capacitor reach up to 53 mW and the energy using efficiency is calculated as 50%. When different loading resistances range from 0.82 to 34.5 kΩ are connected to the storage capacitor in parallel, the power energy stored in the storage capacitor is all about 52.5 mW. Getting through the circuit, the power energy coming from the TENGs can be used to drive numerous conventional electronics, such as wearable watches. 相似文献
22.
The electromagnetic shielding film has drawn much attention due to its wide applications in the integrated circuit package, which demands a high surface quality of epoxy resin. However, gaseous Cu will splash and adhere to epoxy resin surface when the Cu layer in PCB receives enough energy in the process of laser cutting, which has a negative effect on the quality of the shielding film. Laser polishing technology can solve this problem and it can effectively improve the quality of epoxy resin surface. The paper studies the mechanism of Cu powder spraying on the compound surface by 355 nm ultraviolet (UV) laser, including the parameters of laser polishing process and the remains of Cu content on compound surface. The results show that minimal Cu content can be realized with a scanning speed of 700 mm/s, a laser frequency of 50 kHz and the distance between laser focus and product top surface of -1.3 mm. This result is important to obtain an epoxy resin surface with high quality. 相似文献
23.
24.
25.
硅基COZrO铁氧体磁膜结构RF集成微电感 总被引:1,自引:0,他引:1
制作了一种新型磁膜结构射频集成微电感.该电感使用溶胶-凝胶法制备的CoZrO铁氧体作为磁性薄膜;采用平面单匝形式的金属线圈,从而形成"SiO2绝缘层/磁膜层(CoZrO)/SiO2绝缘层/Cu线圈"的结构,具有结构简单、制作工艺与常规集成工艺兼容等特点.同时,采用相同工艺同批制作了无磁膜微电感作为对比样品,并取各项结构参数与磁膜电感相一致.测试结果表明,2GHz处,磁膜结构微电感的感值(L)为1.75nH、品质因数(Q)为18.5,与无磁膜微电感相比,L和Q的值分别提高了25%和23%. 相似文献
26.
A simple and efficient route for quantum dot (QDs) patterning using self-assembled monolayers (SAMs) as templates is described. By means of a laser direct-writing (LDW) technique, SAMs of octadecylphosphonic acid formed by adsorption on native oxide layer of titanium film were patterned through laser-induced ablation of the SAM molecules. This technique allows the creation of chemical-specific patterns accompanied by slight change in the topography. Using atomic force microscopy and friction force microscopy, the dependence of feature size and characteristics on the irradiation dose was demonstrated. Upon immersion of a substrate with patterned SAMs bearing thiol as the terminal group into a dispersion of QDs resulted in the assembly of QDs on the specific thiol-terminated areas. Patterns of QDs with different photoluminescent wavelength were generated. The LDW technique, which is convenient and flexible due to its path-directed and maskless fabrication process, provided a new powerful approach for patterning materials on surfaces for various applications. 相似文献
27.
为了解决目前卫星通信相控阵天线波束扫描角度范围较小、低仰角增益较低等问题,采用双层微带结构,加载圆形金属腔体,实现了更宽波束的S频段圆极化相控阵单元,来提高相控阵低仰角增益.然后,用24个单元按照水滴状形式排布组成相控阵阵列,以减小风阻.仿真结果表明,在收发频段内,相控阵单元的电压驻波比小于1.3,轴比小于3dB,单元在阵中的3dB波瓣宽度为120°左右; 天线阵列在扫描到仰角25°时,其增益相比天顶方向(仰角90°)下降了4dB左右.最后,加工好的天线阵列测试结果和仿真结果具有很好的一致性,波束扫描角度较宽,低仰角增益较大,满足设计要求. 相似文献
28.
丙烯酸酯无皂乳液聚合的研究 总被引:4,自引:1,他引:4
本工作合成了一种带磺酸基团的高分子乳化剂AS,并应用于丙烯酸酯的乳液聚会,得到稳定的乳液,与常规乳液比较,耐水性和化学稳定性明显地提高。 相似文献
29.
Feng T Xie D Lin Y Zhao H Chen Y Tian H Ren T Li X Li Z Wang K Wu D Zhu H 《Nanoscale》2012,4(6):2130-2133
A single-layer graphene film was grown on copper foil by chemical vapor deposition and transferred onto a silicon-pillar-array (SPA) substrate to make a Schottky junction solar cell. The SPA substrate was specifically designed to suppress reflectance and enhance light absorption. The energy conversion efficiency of the prepared graphene/SPA solar cells achieved a maximum of 2.90% with a junction area of 0.09 cm(2). HNO(3) was employed to dope the graphene in the solar cells, and the time dependence of HNO(3) treatment on the cell performance was studied. Poly(3,4-ethylenedioxythiophene) polystyrenesulfonic acid (PEDOT-PSS) was also introduced in graphene/SPA solar cells by spin coating on top of the graphene film, and its modification on the cell performance was characterized. The results show that both HNO(3) and the PEDOT-PSS film could enhance the energy conversion efficiency of graphene/SPA solar cells. 相似文献
30.
Hao Jin Bin Feng Shurong Dong Changjian Zhou Jian Zhou Yi Yang Tianling Ren Jikui Luo Demiao Wang 《Journal of Electronic Materials》2012,41(7):1948-1954
Aluminum nitride (AlN) thin films with c-axis preferred orientation have been prepared by reactive direct-current (DC) magnetron sputtering. The degree of preferred crystal orientation, the cross-sectional structure, and the surface morphology of AlN thin films grown on Si (100) substrates at various substrate temperatures from 60°C to 520°C have been investigated by x-ray diffraction, scanning electron microscopy, and atomic force microscopy. Results show that the substrate temperature has a significant effect on the structural properties, such as the degree of c-axis preferred orientation, the full-width at half-maximum (FWHM) of the rocking curve, the surface morphology, and the cross-sectional structure as well as the deposition rate of the AlN thin films. The optimal substrate temperature is 430°C, with corresponding root-mean-square surface roughness (R rms) of 1.97?nm, FWHM of AlN (002) diffraction of 2.259°, and deposition rate of 20.86?nm/min. The mechanisms behind these phenomena are discussed. Finally, film bulk acoustic resonators based on AlN films were fabricated; the corresponding typical electromechanical coupling coefficient (k t 2 ) is 5.1% with series and parallel frequencies of 2.37?GHz and 2.42?GHz, respectively. 相似文献