一种快速CRC 算法①的硬件实现方法

介绍了CRC校验算法的硬件电路实现方法。CRC校验广泛应用于通信、存储系统，在串行CRC实现的基础上，对电路结构提出了改进的方案，并实现了CRC的并行计算，由此进一步可以适用于任意位数据宽度的数据输入情况。     

利用VB开发分布式监控系统

介绍用分布式模块与VB共同开发的监控系统。     

五氧化二钽薄膜的制备及其I-U特性

本文利用脉冲直流反应磁控溅射的方法制备了五氧化二钽 (Ta2 O5)薄膜 ,俄歇电子能谱仪测试了薄膜的成分含量 ,椭偏仪测试了Ta2 O5薄膜的厚度和折射率 ,XRD分析了薄膜的晶体结构 ,并且分别研究了氧气含量、基底温度等成膜工艺对薄膜的影响。研究结果表明薄膜的成分主要是由氧气含量决定的。利用金属 绝缘体 (介质膜 ) 金属 (MIM)结构初步对Ta2 O5薄膜进行了电学性能的测试 :皮安电流电压源测试了薄膜的I U特性 ,制备出的薄膜折射率在 2 1～ 2 2 ,MIM的I U特性曲线显示了较好的对称性和低的漏电流密度     

质子和中子的单粒子效应等效性实验研究

通过实验方法确定了高能质子和中子引起的单粒子效应等效关系，实验中采用金箔散射法降低了质子束流强度，并利用热释光剂量计（TLD）进行质子注量的监测，采用新研制的存储器长线实时监测系统，进行了64K位至4M位的SRAM器件单粒子效应实验，确定了两种粒子引起单粒子效应等效关系。     

利用TM图像进行干旱荒漠带牧区土地资源调查

选用TM卫片作为调查基础资料,结合地形图和局部地区大比例尺航片,完成了甘肃河西地域三个牧业县的土地利用现状调查,为遥感技术在干旱荒漠地带牧区进行土地资源调查找出了效果好、经济的方法。     

沟槽控制爆破研究技术

文章通过对洋浦电厂海水冷却箱涵沟槽预裂（深孔）爆破技术的研究，提出了复杂地质条件下合理的控制爆破参数及微差起爆方式。针对砂层地段难以钻、爆的特点。笔者进行了有益的探讨。     

行为级DSP算法描述的阵列处理器综合方法研究

本文提出了针对递归DSP算法的高层次系统综合流程,并以脉动(systolic)式处理器阵列结构实现.从DSP算法的FDDL行为级描述开始,经由编译及划分,产生数据相关流图(Data Dependency Graph),然后实现对算法流图的空间映射及时域规划,得到算法的信号流图(Signal Flow Graph),经时序重构,生成脉动阵列,最后实现对处理器单元的数据路径综合及控制器综合,并对处理器单元定位,本文同时提出了各设计阶段的算法策略及优化策略,并给出综合结果。     

无横梁高刚性轧机的结构分析

本文介绍了无横梁高刚性轧机的新颖结构，分析了该轧机高刚性及轴承长寿的原理。该轧机在现场使用中，取得了良好的效果。     

EFFECTS OF COLD EXPANSION OF A HOLE ON FATIGUE CRACK INITIATION LOCATION AND LIFE OF AN LY12CZ ALLOY

Abstract— In the present study the effects of cold expansion of a hole on the location of fatigue crack initiation and life of LY12CZ alloy sheets are experimentally investigated and a quantitative expression of fatigue crack initiation life presented. Test results and analysis show that there may exist an optimum amount of cold expansion, for which both the coefficient of the resistance to fatigue crack initiation and the threshold are increased, and that the direction of cold expansion has no appreciable effect on fatigue crack initiation life. Observations show that, after cold expansion the fatigue crack nearly always initiates on the final entry face from which the mandrel is introduced into the hole during the final cold expansion process. Therefore it may be thought that the entry face is less resistant to fatigue crack initiation. In addition, the assumption of equivalence of residual stresses and also the strain hardening conditions on both the entry and exit faces may be questionable.     

Gate and drain currents in off-state buried-type p-channel LDDMOSFETs

The buried-type p-channel LDD MOSFETs biased at high positive gate voltage exhibit novel characteristics: (1) the ratio of the drain to gate currents is about 1×10^-3 to 5×10^-3; and (2) the gate and drain currents both are functions of only the gate voltage minus the n-well bias. Such characteristics are addressed based on the formation of the surface n ⁺ inversion layer due to the punchthrough of the buried channel to the underlying shallow p-n junction. The measured gate current is due to the Fowler-Nordheim tunneling of electrons from this inversion layer surface and the holes generated within the high-field oxide constitute the drain current. The n⁺ inversion layer surface potential is found to be equal to the n-well bias plus 0.55 V. As a result, both the oxide field and the gate and drain currents are independent of drain voltage