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The preparation of nanometer aluminum nitrogen(AlN) films with uniform lattice arrangement is of great significance for the manufacture of high-frequency surface acoustic wave(SAW) device.We put forward the two-step growth method and the annealing treatment method for the deposition of(100) AlN thin films.The results show that when the sputtering pressure is 1.2 Pa and the ratio between N2 and Ar is 12:8,the influence of lattice thermal mismatch and anti-phase is the smallest during the nucleation growth at low-temperature stage of(100) AlN/(100) Si films.The root-mean-square(RMS) surface roughness of AlN prepared by the two-step method is reduced from 6.4 nm to 2.1 nm compared with that by common deposition process. 相似文献
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基于光电混合联合变换相关的汽车牌照识别方法的实验研究 总被引:5,自引:1,他引:4
本文以光电混合联合变换相关器为基础,提出了采用复合参考图像进行汽车牌照的识别方法,并对该方法进行了实验研究 。 相似文献
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